Mihai Adrian Ionescu

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In this work, we experimentally report the figures of merit of state-of-the-art heterostructure Tunnel Field-Effect-Transistor (TFET) arrays from room (300K) down to cryogenic temperature (10K) at supply voltages below 400mV. We demonstrate here, for the f ...

Vanadium dioxide (VO2) exhibits structural phase transition that can be triggered by thermal, electrical, and mechanical stimuli, making it a highly interesting material for MEMS/NEMS based sensors and actuators thanks to responsivity and exceptional sensi ...

Capacitive measurement of very small displacement of nano-electro-mechanical systems (NEMS) presents some issues that are discussed in this article. It is shown that performance is fairly improved when integrating on a same die the NEMS and CMOS electronics. As an initial step toward full integration, an in-plane suspended gate MOSFET (SGMOSFET) compatible with a front-end CMOS has been developed. The device model, its fabrication, and its experimental measurement are presented. Performance obtained with th

In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a k · p Hamiltonian. Application of the new model to the electron-hole bilayer TFET is provided showing that the inclusion of the asymmetry of the real and imaginary branches of the hole dispersion relation is critical in determining the device characteristi

In this work we report dense arrays of highly doped gate-all-around Si nanowire accumulation-mode nMOSFETs with sub-5 nm cross-sections. The integration of local stressor technologies (both local oxidation and metal-gate strain) to achieve ≥ 2.5 GPa uniaxial tensile stress is reported for the first time. The deeply scaled Si nanowire shows low-field electron mobility of 332 cm2/V.s at room temperature, 32% higher than bulk mobility at the equivalent high channel doping. The conduction mechanism as well as h

In this work a conceptual design of a conformal antenna array is presented for a millimeter-wave antenna system, optimized for low-cost mass production in PCB technology. The conformal array is constituted by four cube faces with two antennas realized on each face. A printed circuit board (PCB) laminate material was chosen for developing this integrated 60 GHz antenna solution. The beamforming capabilities of the 1 × 8 antenna array were validated using similar array topology but at frequency of 17.2 GHz. T

This paper reports on the design, fabrication and detailed characteristics of multi-gate vibrating-body field effect transistors (VB-FETs). Double-gate and four-gate VB-FETs with resonance frequencies of 2 MHz and 71 MHz, respectively, are successfully dem ...

In this work a double-gate pentacene TFT architecture is presented. The devices are fabricated on a polyimide substrate using three aligned levels of stencil lithography along with standard photolithography, which enable a soft yet well controlled device p ...

In this work, a detailed analysis of capacitance behavior of high voltage MOSFET (HV-MOS) e.g. LDMOS, VDMOS using device simulation is made. The impact of lateral non-uniform doping and drift region is separately analyzed. It is shown that the peaks in C-GD and C-GS capacitances of HV-MOS originate from lateral non-uniform doping. The drift region decreases the C-GD capacitance and increases the peaks in CGS and also gives rise to peaks in C-GG capacitances increasing with higher drain bias. It is also show

This letter proposes a hybrid abrupt switch principle and a corresponding device architecture that combines quantum mechanical band-to-band and barrier tunneling mechanisms. The device overcomes the intrinsically low on-current (I-ON) of conventional tunne ...

The nanoscaled electrostatically actuated electromechanical ohmic switch is an emerging device with advanced performance in terms of ION/IOFF ratio. It is imperative that compact models accompany such novel devices in order to fully evaluate their potentia ...

An original study of the dielectric charging in a suspended gate FET device (SG-FET) and its use for memory applications is reported. Combining a movable conductive gate with the ability to retain charge on top of the dielectric layer of FET device, a MEMS ...

We present the fabrication and the electrical characterization of ferroelectric tunnel FETs (Fe-TFETs). This novel family of hysteretic switches combines the low subthreshold power of band-to-band tunneling devices with the retention characteristics of Fe gate stacks, offering some interesting features for future one-transistor (1T) memory cells. We report I-on/I-off larger than 10(5) and I-off on the order of 100 fA/mu m in micrometer-scale p-type Fe-TFETs fabricated on ultrathin-film (fully depleted) sili

In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanowire wi ...

We have developed an active microphotodiode array (MPDA) for retinal stimulation. The unique feature of the device is that each pixel acts as an independent oscillator, whose frequency is controlled by the incident light intensity. The design is based on a ...

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

This work presents a CMOS-compatible multilayer platform integrating energy storage and tunable varactor functionality within a compact system. By co-integrating antiferroelectric (AFE) and dielectric (DE) layers, the design achieves tunability up to 28%, ...

Cardiovascular biomarkers are central to the diagnosis and management of a range of acute and chronic disease states, yet current approaches remain dependent on episodic venous blood sampling. Dermal interstitial fluid (ISF), a dynamic and accessible biofluid, offers a promising alternative for continuous and minimally invasive biomarker monitoring. In this Review, we explore the emerging convergence of ISF biosensing technologies with cardiovascular diagnostics. We discuss the physiological basis of ISF sa

This work reports a comparison of high-k AbO(3)/HfO2/Al2O3 dielectric stack Tunnel FETs with both vertical tunneling and lateral tunneling, as non-volatile memory (NVM) cells. Tunnel FET NVM are fabricated and characterized to evaluate their potential as low power memory operation. These memory cells can be programmed with voltages from -10V to -15V (p type devices) and show extremely stable memory hysteresis up 400K with very low leakage. We experimentally show that, in strong contrast with conventional la

The development of a particular etching recipe involving two sequences of a Deep Reactive Ion Etching followed by an isotropic etching step for the realization of 3D stacked arrays of fins and nanowires on bulk silicon is reported. Such a recipe can be used among the new processes and designs developed to control the shape and formation of such 3D structures. Applications in microelectronics (stacked field effect transistors) and microsystems (arrays of MEMS resonators and photonic structures) are foreseen.

Mihai Adrian Ionescu

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An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10K

Wafer-Scale Demonstration of a Highly Sensitive Strain Sensor Based on Polycrystalline VO2

Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process

Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k.p

Accumulation-Mode GAA Si NW nFET with sub-5 nm cross-section and high uniaxial tensile strain

Scalable conformal array for multi-gigabit body centric wireless communication

Multi-gate vibrating-body field effect transistor (VB-FETs)

Double-Gate Pentacene TFTs with Improved Control in Subthreshold Region

Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of high voltage MOSFETs

A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms

Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model

Oxide charging and memory effects in suspended-gate FET

The Hysteretic Ferroelectric Tunnel FET

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

An active microphotodiode array of oscillating pixels for retinal stimulation

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

CMOS-Compatible Antiferroelectric-Dielectric Capacitors for Multifunctional Energy Storage and Tunable Electronics

The detection of cardiovascular biomarkers in dermal interstitial fluid - a step to real-time monitoring

Vertical versus lateral tunneling FET non-volatile memory cell

3D stacked arrays of fins and nanowires on bulk silicon