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Mihai Adrian Ionescu

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Related publications (403)

Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

Mihai Adrian Ionescu, Arnaud Magrez, Laurent Syavoch Bernard, Antonios Bazigos, Pankaj Sharma

We propose, fabricate, and experimentally demonstrate a circuit based on graphene field-effect transistors (GFETs) showing enhanced negative differential resistance (NDR) characteristics at room temperature. The proposed graphene NDR (GNDR) circuit consist ...

Institute of Electrical and Electronics Engineers2015

Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide

Mihai Adrian Ionescu, Josef Andreas Schuler, Antonio Paone, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale

Vanadium dioxide thin films were deposited on amorphous SiO2-coated Si substrates, by reactive magnetron sputtering at 490 °C of a pure vanadium target. The deposition parameters were optimized in order to maximize the resistivity modulation due to the met ...

Elsevier2015

Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

We investigate the effect of pseudo-bilayer configurations at low operating voltages (

American Institute of Physics2015

Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gale'

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

In this comment we demonstrate that the inclusion of field--induced quantum confinement effects through appropriate discretization of conduction and valence bands refutes the suitability of a germanium electron--hole bilayer tunnel field-effect transistor ...

Institute of Physics2015

Negative Differential Resistance in Top-Gated Chemical Vapor Deposition Grown Graphene Transistors

Mihai Adrian Ionescu, Arnaud Magrez, Laurent Syavoch Bernard, Antonios Bazigos, Pankaj Sharma

2015

CMOS-compatible abrupt switches based on VO2 metal-insulator transition

Mihai Adrian Ionescu, Andreas Schueler, Antonio Paone, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale

2015

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

Didier Bouvet, Mihai Adrian Ionescu, Sara Rigante, Antonios Bazigos, Elizabeth Buitrago Godinez, Paolo Scarbolo

Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technolo ...

Amer Chemical Soc2015

Performance evaluation of novel technologies for terahertz reflectarrays

Juan Ramon Mosig, Anja Skrivervik, Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Hamed Hasani, Michele Tamagnone, Pietro Romano, Santiago Capdevila Cascante

2015

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

Mihai Adrian Ionescu, Arnaud Magrez, Laurent Syavoch Bernard, Antonios Bazigos, Pankaj Sharma

We propose and experimentally demonstrate a novel circuit based on graphene FETs (GFETs) showing excellent negative differential resistance (NDR) characteristics at room temperature. The proposed GNDR circuit exploits a closed loop connection of 1-GFET wit ...

IEEE2015

Evaluation of graphene for terahertz reflectarray antennas

Juan Ramon Mosig, Anja Skrivervik, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Hamed Hasani, Michele Tamagnone, Santiago Capdevila Cascante

2015

Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

American Institute of Physics2015

Two dimensional quantum mechanical simulation of low dimensional tunneling devices

Mihai Adrian Ionescu, Livio Lattanzio, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of the Schrodinger and Poisson equations, using the Finite Element Method followed by tunneling current (direct and phonon assisted) calculation in post-processing. ...

Elsevier2015

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Mihai Adrian Ionescu, Ji Cao, Sebastian Thimotee Bartsch

We report wafer-level fabrication of resonant-body, carbon nanotube (CNT)field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obt ...

Amer Chemical Soc2015

Spatial Variability in Large Area Single and Few-layer CVD Graphene

Mihai Adrian Ionescu, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Michele Tamagnone

2015

Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Josef Weber

We demonstrate that fine-pitch TSV technology can be exploited to fabricate micro-inductors on high resistivity substrate, with record-high inductance per area and preserving their performance at GHz frequencies. We report an extensive experimental study o ...

2015

Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor Including Quantum Confinement

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

We investigate the effect of asymmetric configurations on the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) and assess the improvement that they provide in terms of boosting the typically very low ON current levels ...

Institute of Electrical and Electronics Engineers2015

Self-biased reconfigurable graphene stacks for terahertz plasmonics

Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Arnaud Magrez, Clara-Fausta Moldovan, Laurent Syavoch Bernard, Santiago Capdevila Cascante

The gate-controllable complex conductivity of graphene offers unprecedented opportunities for reconfigurable plasmonics at terahertz and mid-infrared frequencies. However, the requirement of a gating electrode close to graphene and the single 'control knob ...

Nature Publishing Group2015

Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Josef Weber

The development of interconnections suitable for radio- frequency (RF) and millimeter-wave (mm-wave) applications is of foremost importance for the feasibility of high-quality substrate-integrated devices. For this purpose, we introduce and validate the te ...

2015

Solid-gap wine-glass mode disks VB-FET resonators applied to biomass sensing

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Mariazel de la Candelas Maqueda López

The working principle of an electromechanical resonator for mass sensing applications is based on monitoring the characteristic resonance frequency downshift due to the particles attachment on the surface of the device. Solid-Gap Vibrating-Body Field Effec ...

Elsevier Science Bv2015

Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition

Mihai Adrian Ionescu, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Antonio Paone, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2). We present the advantages of VO2-based capacitors over alternative technologies for micr ...

2015

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