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Mihai Adrian Ionescu

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Related publications (403)

Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

In conventional planar EHBTFETs, the interband tunneling phenomena responsible for the drive current takes place vertically in the section of the channel where top and bottom gates overlap. As a result, the horizontal extent of this overlapping between gat ...

Ieee2016

Single field effect transistor capacitor-less memory device and method of operating the same

Mihai Adrian Ionescu, Nilay Dagtekin, Arnab Biswas

A single field effect transistor capacitor-less memory device, and method of operating the same, including a drain region, a source region, an intrinsic channel region between the drain region and the source region forming the single field effect transisto ...

Technology Transfer Office EPFL2016

One Transistor Active Pixel Sensor with Tunnel FET

Mihai Adrian Ionescu, Nilay Dagtekin

A tunneling field effect transistor for light detection, including a p-type region connected to a source terminal, a n-type region connected to a drain terminal, an intrinsic region located between the p-type region and the n-type region to form a P-I junc ...

2016

Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

Mihai Adrian Ionescu, Andreas Schueler, Josef Andreas Schuler, Antonio Paone, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale

We report a thorough investigation of the electrically-induced metal-insulator transition in vanadium dioxide (VO2) for abrupt switching in 2-terminal devices (0.24 mV/dec at 25 °C, 0.38 mV/dec at 50 °C). We exploit the electrothermal actuation model based ...

IEEE2016

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

In this work, we propose and investigate the high performance and low power design space of non-hysteretic negative capacitance MOSFETs for the 14nm node based on the calibrated simulations using an experimental gate stack with PZT ferroelectric to obtain ...

2016

Near optimal graphene terahertz non-reciprocal isolator

Juan Ramon Mosig, Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Michele Tamagnone

Isolators, or optical diodes, are devices enabling unidirectional light propagation by using non-reciprocal optical materials, namely materials able to break Lorentz reciprocity. The realization of isolators at terahertz frequencies is a very important ope ...

Nature Publishing Group2016

Field-enhanced design of steep-slope VO2 switches for low actuation voltage

Juan Ramon Mosig, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Michele Tamagnone, Luca Petit

The abrupt metal-insulator transition in vanadium dioxide (VO2) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. We developed a fi ...

IEEE2016

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

Mihai Adrian Ionescu, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Arnab Biswas, Cem Alper, Emanuele Andrea Casu, Teodor Rosca, Nicolò Oliva, Anna Krammer

In this paper we report the first hybrid Phase-Change - Tunnel FET (PC-TFET) device configurations for achieving a deep sub-thermionic steep subthreshold swing at room temperature and subthreshold power savings. The proposed hybrid device feedbacks the ste ...

IEEE2016

Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs

Juan Ramon Mosig, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Michele Tamagnone

We propose and characterize graphene quantum capacitors, tunable with voltage by the control of their charge density, for tunable LC tanks as essential building blocks for Radio-Frequency (RF) functions in densely integrated circuits. We fabricate and inve ...

IEEE2016

Heterogeneous Integration of Low Power pH FinFET sensors with Passive Capillary Microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode

Mihai Adrian Ionescu, Hoël Maxime Guérin, Erick Antonio Garcia Cordero, Amira Muhech Medrano, Francesco Bellando

This work presents one of the first low power pH sensing microfluidic chip based on the heterogeneous integration of: (i) high-k FinFET sensors with liquid gate, (ii) miniaturized Ag/AgCl quasi-Reference Electrode and (iii) passive microfluidic. The integr ...

Ieee2016

Low-energy biomarker detection through charge-based impedance measurements

Mihai Adrian Ionescu, Marco Mazza, Junrui Zhang

A novel approach for the detection of biomarkers in aqueous condition via differential impedance is presented. The binding of biomarkers onto functionalized inter-digital electrodes induces a change in the sensor impedance, both in its real and imaginary c ...

2016

Method to fabricate finfet sensors, in particular, finfet sensors for ionic, chemical and biological applications on si-bulk

Mihai Adrian Ionescu, Sara Rigante

The present invention relates to a method of producing a FinFET sensor device comprising the steps of: providing a silicon substrate; etching the silicon substrate to produce at least one upwardly extending Fin structure externally protruding from a surfac ...

2015

Large area suspended graphene for nano-mechanical devices

Mihai Adrian Ionescu, Clara-Fausta Moldovan

To address the need for large area dry graphene transfer techniques in Nanomechanical applications we use transfer printing to suspend large areas of graphene on pre-patterned substrates with cavities. We find that using this method, clean suspended graphe ...

Wiley-V C H Verlag Gmbh2015

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

Mihai Adrian Ionescu, Arnaud Magrez, Laurent Syavoch Bernard, Antonios Bazigos, Pankaj Sharma

In this paper we demonstrate experimentally and discuss the negative differential resistance (NDR) in dual-gated graphene field effect transistors (GFETs) at room temperature for various channel lengths, ranging from 200 nm to 5 mu m. The GFETs were fabric ...

Amer Chemical Soc2015

Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches

Mihai Adrian Ionescu, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Laurent Syavoch Bernard, Pankaj Sharma

The fabrication of a Nanoelectromechanical System (NEMS) capacitive switch consisting of a suspended multilayer graphene membrane, doubly clamped on a coplanar waveguide (CPW) is presented and its RF performance is evaluated. The scattering parameters are ...

Elsevier2015

Graphene RF NEMS shunt switches for analog and digital phase shifters

Mihai Adrian Ionescu, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Michele Tamagnone

2015

Carbon nanotube gas sensor array for multiplex analyte discrimination

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Hoël Maxime Guérin, Elizabeth Buitrago Godinez

The lack of selectivity toward a particular analyte has always been the primary concern regarding CNT-based gas sensors. For that reason, in here we present a gas discrimination strategy that focuses on the electrode-CNT junction. The junction is shown to ...

Elsevier Science Sa2015

Compact modeling of DG-Tunnel FET for Verilog-A implementation

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Antonios Bazigos

In this work, a compact model based on an analytical closed form solution of the 1D Poisson's equation for a double-gate Tunnel FET is derived. Furthermore, the current levels are estimated by implementing an algorithm based on the Kane's band-to-band tunn ...

IEEE2015

Design, Fabrication and Characterization of Terahertz Reflectarrays Based on a Silicon Substrate

Juan Ramon Mosig, Anja Skrivervik, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Hamed Hasani, Michele Tamagnone, Santiago Capdevila Cascante

2015

A capacitance-voltage model for DG-TFET

Mihai Adrian Ionescu, Arnab Biswas

IEEE, Piscataway, NJ, USA2015

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