Publication

The Hysteretic Ferroelectric Tunnel FET

Mihai Adrian Ionescu, Didier Bouvet
2010
Journal Articles

Abstract

We present the fabrication and the electrical characterization of ferroelectric tunnel FETs (Fe-TFETs). This novel family of hysteretic switches combines the low subthreshold power of band-to-band tunneling devices with the retention characteristics of Fe gate stacks, offering some interesting features for future one-transistor (1T) memory cells. We report I-on/I-off larger than 10(5) and I-off on the order of 100 fA/mu m in micrometer-scale p-type Fe-TFETs fabricated on ultrathin-film (fully depleted) silicon-on-insulator substrates with a SiO2/Al2O3/PVDF gate stack processed at low temperature. The hysteretic characteristics of the TFETs with Fe gate stacks are revealed by static experiments, and the principle of the proposed device is further confirmed by 2-D calibrated numerical simulations. Low temperature measurements down to 77 K confirm the reduced sensitivity of the TFET subthreshold swing to temperature and distinguish them from fabricated reference Fe metal-oxide-semiconductor FETs. Finally, we investigate the potential of Fe-TFETs as 1T memory devices and find retention times on the order of a few minutes at room temperature.

Official source

https://infoscience.epfl.ch/entities/publication/b109a75e-c8f7-4cb0-93a6-2d903cc11f0e

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Mihai Adrian Ionescu, Didier Bouvet
2010
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/b109a75e-c8f7-4cb0-93a6-2d903cc11f0e

About this result

Related concepts (32)

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Flash memory

Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.

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