Mihai Adrian Ionescu

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This work experimentally demonstrates, for the first time, that by integrating a thin ferroelectric layer into a gate stack of a standard MOS transistor one, it is possible to overcome the 60 mV/decade subthreshold swing limit at room temperature of MOSFET ...

Self-aligned lateral dual-gate suspended-body single-walled carbon nanotube (CNT) field-effect transistors (CNFETs) have been demonstrated. A nano-precision assembly method using resist-assisted ac-dielectrophoresis is applied. Superior I-V characteristics ...

We present a fully integrated Mach-Zehnder interferometer in silicon-on- insulator technology. Modulation of the index of refraction is achieved through the plasma dispersion effect resulting in a bandwidth in the 10 MHz range. A particular and innovative design makes this device completely compatible with CMOS technology allowing electronic functions to be integrated on the same substrate. Measurement results, limitations due to thermooptic effect and absorption related to charge injection together with fu

Cortisol is a hormone released in response to stress and is a major glucocorticoid produced by adrenal glands. Here, we report a wearable sensory electronic chip using label-free detection, based on a platinum/graphene aptamer extended gate field effect tr ...

Micro-electromechanical (MEM) laterally vibrating square resonators and beams, fabricated via a prototyping technology combining FIB-micromachined gaps with conventional UV lithography in 1.35 mu m thick SOI are presented. Resonators with both capacitive and MOSFET detection and gaps of similar to 100 nm are demonstrated. Resonance frequencies of 32 MHz and 13 MHz were measured for squares and beams, respectively. The square shaped resonators have Q-factors in the order of 4000. This paper reports on a vibr

The present disclosure concerns a Field-Effect Transistor device or sensor comprising at least one drain region, at least one source region, at least a channel region, at least a first gate connected to the channel region, at least one stack comprising at ...

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of mate ...

In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large and unique design space. Tra ...

HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanometer t ...

In this letter, we report that the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on the modulation of the injected current. We explain the superlinear onset of the output characteristics ...

In this paper, we report for the first time, assessment on mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless (JL) nMOSFETs with cross-section down to 5 nm. This analysis was performed in accumulation regime, as a first ...

The paper deals with the oscillator applications based on vibrating mode of the suspended gate SG-MOSFET transistor. In order to simulate the electrical behavior of the transistor a small-signal equivalent circuit of the gate is proposed and validated. An ...

A 3D vertically stacked silicon nanowire (SiNW) field effect transistor featuring a high density array of fully depleted channels gated by a backgate and one or two symmetrical platinum side-gates through a liquid has been electrically characterized for th ...

Thermo-optical and electro-optical (plasma dispersion) effects for silicon based integrated optical modulators are becoming attractive and effective solutions for telecommunications applications such as switching for programmable optical add-drop multiplexing for WDM. In this paper, a simple yet highly efficient novel electro-optical modulator device that exploits a SOI Schottky diode integrated in silicon rib wave-guide is proposed. Numerical 2D electrical (ATLAS©1) and 3D optical (BPM_CAD©2)simulations ar

In this work, we investigate the fundamental effects contributing to energy storage enhancement in on-chip ferroelectric electrostatic supercapacitors with doped high-k dielectrics. By optimizing energy storage density and efficiency in nanometer-thin stac ...

Two levels of aligned stencil lithography were used to fabricate pentacene thin film transistors on 12 mu m thick flexible polyimide substrates. Flexible transistors with 20 x 40 mu m(2) channels were electrically measured under strain up to 2.6%. After on ...

In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of circuits ...

Strain engineering is used to maintain Moore's Law in scaled CMOS devices and as a technology booster for More-than-Moore devices in the nanoelectronics era. Strain is crucial because of its ability to increase electron and hole mobilities in Si. However, ...

The development of nanoelectromechanical systems (NEMS) is likely to open up a broad spectrum of applications in science and technology. In this study, we demonstrate a novel double-transduction principle for silicon nanowire resonators which exploits the ...

A novel approach for the detection of biomarkers in aqueous condition via differential impedance is presented. The binding of biomarkers onto functionalized inter-digital electrodes induces a change in the sensor impedance, both in its real and imaginary c ...

Mihai Adrian Ionescu

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Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO₂ gate stack

Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors

CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology

Extended gate field-effect-transistor for sensing cortisol stress hormone

Integration of MOSFET transistors in MEMS resonators for improved output detection

Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

Mobility Extraction Assessment in GAA Si NW JL FETs with Cross-Section Down to 5 nm

Oscillator Based on Suspended Gate MOS Transistors

Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors

A Novel SOI Schottky Electro-optical Modulator for Ghz High-Speed Switching

Ferroelectric Supercapacitors by Combining Polarization Switching and Negative Capacitance Effects for On-Chip Energy Storage

Streched organic transistors maintain mobility on flexible substrates

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

Nanoscale strain characterisation for ultimate CMOS and beyond

Junctionless Silicon Nanowire Resonator

Low-energy biomarker detection through charge-based impedance measurements