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Person

Ali Saeidi

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https://people.epfl.ch/ali.saeidi?lang=en

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Official source

https://people.epfl.ch/ali.saeidi?lang=en

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Related publications (25)

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Drazen Dujic

Drazen Dujic is an Associate Professor and Head of the Power Electronics Laboratory at EPFL. He received the Dipl.Ing. and MSc degrees from the University of Novi Sad, Serbia in 2002 and 2005, respectively, and the PhD degree from Liverpool John Moores University, UK in 2008. From 2003 to 2006, he was a Research Assistant with the Faculty of Technical Sciences at University of Novi Sad. From 2006 to 2009, he was a Research Associate with Liverpool John Moores University. After that he moved to industry and joined ABB Switzerland Ltd, where from 2009 to 2013, he was Scientist and then Principal Scientist with ABB Corporate Research Center in Baden-Dättwil, and from 2013 to 2014 he was R&D Platform Manager with ABB Medium Voltage Drives in Turgi. He joined EPFL in 2014 as Tenure Track Assistant Professor and was promoted to Associate Professor in 2021. His research interests include the areas of design and control of advanced high power electronic systems and high-performance drives, predominantly for the medium voltage applications related to electrical energy generation, conversion and storage. He has authored or coauthored more than 150 scientific publications and has filed 16 patents. In 2018 he received EPE Outstanding Service Award from European Power Electronics and Drives Association and in 2014 the Isao Takahashi Power Electronics Award for Outstanding Achievement in Power Electronics. He is Senior Member of IEEE, and serves as Associate Editor for IEEE Transactions on Power Electronics, IEEE Transactions on Industrial Electronics and IET Electric Power Applications. He is Chairman of the Swiss IEEE Power Electronics Society (PELS) Chapter and IEEE PELS R8 Chair.

Ali Saeidi

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Negative capacitance semiconductor sensor

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures