Publication

Vertical versus lateral tunneling FET non-volatile memory cell

Mihai Adrian Ionescu
2016
Conference Papers

Abstract

This work reports a comparison of high-k AbO(3)/HfO2/Al2O3 dielectric stack Tunnel FETs with both vertical tunneling and lateral tunneling, as non-volatile memory (NVM) cells. Tunnel FET NVM are fabricated and characterized to evaluate their potential as low power memory operation. These memory cells can be programmed with voltages from -10V to -15V (p type devices) and show extremely stable memory hysteresis up 400K with very low leakage. We experimentally show that, in strong contrast with conventional lateral tunneling TFET, the vertical tunneling TFET based NVM memory has a much higher memory window (V-T shift) due to excellently aligned gate field and tunneling path in the latter case.

Official source

https://infoscience.epfl.ch/entities/publication/b8d1d054-5c02-4d9b-9578-a17bee7b21d1

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Mihai Adrian Ionescu
2016
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/b8d1d054-5c02-4d9b-9578-a17bee7b21d1

About this result

Related concepts (32)

Non-volatile memory

Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD).

Semiconductor memory

Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell.

Memory cell (computing)

The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory.

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Vertical versus lateral tunneling FET non-volatile memory cell

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