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Mihai Adrian Ionescu

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Publications associées (403)

A Wearable Low-Power Sensing Platform for Environmental and Health Monitoring: The Convergence Project

Mihai Adrian Ionescu, Thomas Ernst

The low-power sensing platform proposed by the Convergence project is foreseen as a wireless, low-power and multifunctional wearable system empowered by energy-efficient technologies. This will allow meeting the strict demands of life-style and healthcare ...

2021

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi

In this work we propose and experimentally validate a relaxation spiking oscillator architecture with ultra-high tuning range (higher than 400%, from 5KHz to more than 25kHz when the control voltage is varied from 2.5 to 5V) that exploits the reversible me ...

IEEE2021

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi

IEEE2021

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Mihai Adrian Ionescu, Luca Selmi, Junrui Zhang, Francesco Bellando, Pierpaolo Palestri

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power i ...

2021

Extended gate field-effect-transistor for sensing cortisol stress hormone

Mihai Adrian Ionescu, Hoël Maxime Guérin, Junrui Zhang, Luca Capua, Sadegh Kamaei Bahmaei, Sayedeh Shirin Afyouni Akbari, Shokoofeh Sheibani

Cortisol is a hormone released in response to stress and is a major glucocorticoid produced by adrenal glands. Here, we report a wearable sensory electronic chip using label-free detection, based on a platinum/graphene aptamer extended gate field effect tr ...

SPRINGERNATURE2021

An Experimental Study Of The Photoresponse Of 1T-1R Oscillators Based On Vanadium Dioxide: Towards Spiking Sensing Systems

Mihai Adrian Ionescu, Olivier Martin, Teodor Rosca, Fatemeh Qaderi Rahaqi, Marco Riccardi

In this work we investigate the effect of visible light radiation on compact 1T-1R relaxation spiking oscillator cells based on 2-terminal Vanadium dioxide (VO2) structures. We illuminate the devices using a tunable wavelength laser between 400 and 850 nm ...

IEEE2021

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Luca Capua, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Double-Gate Si Nanowire FET Sensor Arrays For Label-Free C-Reactive Protein detection enabled by antibodies fragments and pseudo-super-Nernstian back-gate operation

Mihai Adrian Ionescu, Luca Capua

In this work we report the first CMOS-compatible label-free C-Reactive Protein (CRP) differential-mode sensors and sensing method based on double-gate Si nanowires (SiNWs) FET arrays. The sensor is first validated for pH static and dynamic sensing, showing ...

2021

3D Smith chart constant quality factor semi-circles contours for positive and negative resistance circuits

Mihai Adrian Ionescu, Andrei Müller

The article firstly proves that the constant quality factor (Q) contours for passive circuits, while represented on a 2D Smith chart, form circle arcs on a coaxal circle family. Furthermore, these circle arcs represent semi-circles families in the north he ...

2020

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri

Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by u ...

AMER CHEMICAL SOC2020

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Mihai Adrian Ionescu, Nicolò Oliva, Matteo Cavalieri, Luca Capua

Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most versatile technological solutions for building tunneling field effect transistors because of the sharp and potentially clean interfaces resulting from van der Waals assembly. Seve ...

NATURE PUBLISHING GROUP2020

Scaled resistively-coupled VO2 oscillators for neuromorphic computing

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Elisabetta Corti, Siegfried Karg

2020

The 3D Smith Chart: From Theory to Experimental Reality

Mihai Adrian Ionescu, Andrei Müller

The Smith chart was primarily developed, extended, and refined by Phillip Hagar Smith [1] in a series of works published [2]-[4] between 1939 and 1969. Smith was born in Lexington, Massachusetts, in 1905. He majored in electrical communications at Tufts Un ...

2020

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Jean-Michel Sallese, Mihai Adrian Ionescu, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of the thickness ...

2020

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

Igor Stolichnov, Mihai Adrian Ionescu, Matteo Cavalieri, Carlotta Gastaldi

HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanometer t ...

AMER INST PHYSICS2020

Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process

Igor Stolichnov, Mihai Adrian Ionescu, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi

In this work, we report an experimental investigation of pulsed laser deposition (PLD) of thin Gd:HfO2 layers at 330 degrees C, which show ferroelectric behavior after annealing at 450 degrees C, compatible with complementary metal-oxide-semiconductor back ...

AMER CHEMICAL SOC2020

An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction

Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi, Nicolò Oliva, Benjamin Paul Johanès Gabriel Lambert, Matteo Cavalieri, Sadegh Kamaei Bahmaei, Amin Rassekh

This experimental study investigates a novel multi-functional one dimensional-two dimensional (1D-2D) heterojunction made of two different band-gap semiconductors, i.e. single-walled carbon nanotube (SWCNT) and tungsten di-selenide (WSe2). The proposed ult ...

Institute of Electrical and Electronics Engineers2020

Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing

Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Maneesha Rupakula, Junrui Zhang, Francesco Bellando, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfa ...

2020

Extended Gate Field Effect Transistor Based Sensor for Detection of Trace Amounts of Anti-Depressant Drug

Mihai Adrian Ionescu, Shokoofeh Sheibani

Citalopram hydrobromide (CP) is a selective serotonin reuptake inhibitor for the treatment of the depressive disorder. In this work, a novel label-free recognition method based on an extended gate field-effect transistor (EGFET) for selective determination ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

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