Mihai Adrian Ionescu

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A fabrication method for silicon beams and membranes defined in lateral and vertical dimensions, as well as superposed silicon membranes, all realized in bulk silicon using only one lithographic step is proposed. This proposal is based on observations made ...

This paper presents fabrication and RF characterization results of spiral inductors fabricated using a developed damascene-like thick-copper / polyimide process module. This module has low thermal budget and is compatible with current IC interconnect archi ...

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

We report wafer-level fabrication of resonant-body, carbon nanotube (CNT)field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obt ...

We report the first experimental demonstration and performance characterization of a fully integrated negative capacitance (NC) WSe2/SnSe2 p-type Tunnel FETs (TFETs), validating the use of NC as a technology booster to achieve a significantly improved sub- ...

This paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both I-V and G-V characteristics in all regimes of operation, n- and p-ambipolarity, the superlinear ons ...

The rise of electron spin qubit architectures for quantum computing processors has led to a strong interest in designing and integrating ferromagnets to induce stray magnetic fields for electron dipole spin resonance (EDSR). The integration of nanomagnets ...

Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy ...

This paper presents numerical analysis of an in-plane resonant nano-electro-mechanical (NEM) sensor based on mass-detection principle using a 3D FEM electromechanical simulation combined with a NEM/MOS hybrid circuit simulation. The self-assembled linker m ...

A double-gate (DG) fin field effect transistor (FinFET) is discussed as new label-free ion and biological sensor. Simulations as function of channel doping, geometrical dimensions, operation point and materials investigated the device response to an extern ...

In this work we report the first CMOS-compatible label-free C-Reactive Protein (CRP) differential-mode sensors and sensing method based on double-gate Si nanowires (SiNWs) FET arrays. The sensor is first validated for pH static and dynamic sensing, showing ...

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

In this paper, we report very abrupt current switching and hysteresis effects due to saddle point and impact ionization in low doped n-channel Omega-Gate MOSFET (Omega-MOSFET). The Omega-MOSFETs are fabricated on low-doped (8x10(14)cm(-3)) bulk silicon by bulk silicon isotropic etching and sacrificial oxidation. A specific abrupt impact ionization and hysteresis of I-D(V-DS) are observed at high drain voltage (V-DS > 11V) on transistors that have short channel effects (L=0.9-10um). This is explained by the

In this study, we develop and experimentally validate the integration of a localized metallic back-gate into a multi-gate silicon-on-insulator (SOI) field-effect transistor (FET), aimed at enabling front-gate coupling efficiency from room to cryogenic (mK) ...

Power savings requirements in wake-up circuits and RFID applications can greatly benefit from the emerging RF MEM technology. In this paper we report an RF MEM power sensor that can simultaneously offer significant power savings and co-integration with wak ...

Self-aligned suspended-body single-walled (SW) carbon nanotube field-effect transistors (CNFETs) with dual lateral gates have been demonstrated. Two independent lateral gates are symmetrically placed less than 100 nm away from the CNT channel. The operatio ...

This paper addresses the challenges and opportunities offered by post-CMOS devices in terms of new functionality and ultra low power. It focuses on the illustration of: (i) the quest for the new electronic abrupt switches (tunnel-FET and IMOS/PIMOS) and (i ...

The successful experimental demonstration of large-scale and in-situ growth of horizontal, dense and aligned carbon nanotube (CNT) arrays is presented. This new CNT growth process is developed for the direct integration of nanotubes into gas sensing devices. The device electrodes are patterned in a TiN/Al2O3/TiN stack which is used as a support for the CNT growth catalyst. Thereafter, iron is locally deposited on the stack’s vertical sidewall as a catalyst material. With the use of a chemical vapor depositi

In this work, highly scaled FinFETs (Fin Field Effect Transistors) are proposed as both sensing and circuit units of a lab-on-a-chip platform. The FinFET-based sensors with an HfO2 gate oxide demonstrate full pH-response with ΔVth ≈ 56 mV/pH. High readout ...

Accurately measuring cortisol levels is crucial for diagnosing and managing stress-related conditions. Among all biofluids containing cortisol, Interstitial fluid (ISF) offers distinct advantages such as stable pH, continuous extraction, and minimal contam ...

Mihai Adrian Ionescu

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Silicon nanostructuring for 3D bulk silicon versatile devices

Fabrication and electrical characterization of high performance copper/polyimide inductors

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

Numerical analysis of zeptogram/Hz-level mass responsivity for in-plane resonant nano-electro-mechanical sensors

FinFET for high sensitivity ion and biological sensing applications

Double-Gate Si Nanowire FET Sensor Arrays For Label-Free C-Reactive Protein detection enabled by antibodies fragments and pseudo-super-Nernstian back-gate operation

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Abrupt current switching due to impact ionization effects in Omega-MOSFET on low doped bulk silicon

Cryogenic Front-to-Back Coupling in FD-SOI for Tunable Qubits by Localized Metallic Back-Gate

RF MEMS power sensors for ultra-low power wake-up circuit applications

Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors

New functionality and ultra low power: key opportunities for post-CMOS era

Large-scale, in-situ integration of horizontal carbon nanotube arrays into gas sensing devices

Finfet with fully PH-responsive HfO2 as highly stable biochemical sensor

AC-Driven Aptamer-Decorated Graphene FET for Cortisol Detection