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Mihai Adrian Ionescu

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Related publications (396)

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Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Luca Capua

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Mihai Adrian Ionescu, Ji Cao, Sebastian Thimotee Bartsch

We report wafer-level fabrication of resonant-body, carbon nanotube (CNT)field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obt ...

Amer Chemical Soc2015

Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs

Mihai Adrian Ionescu, Jürgen Brugger, Clara-Fausta Moldovan, Ali Saeidi, Xia Liu, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

We report the first experimental demonstration and performance characterization of a fully integrated negative capacitance (NC) WSe2/SnSe2 p-type Tunnel FETs (TFETs), validating the use of NC as a technology booster to achieve a significantly improved sub- ...

IEEE2022

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

Mihai Adrian Ionescu, Arnab Biswas, Cem Alper

This paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both I-V and G-V characteristics in all regimes of operation, n- and p-ambipolarity, the superlinear ons ...

Institute of Electrical and Electronics Engineers2017

Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots

Mihai Adrian Ionescu, Victor Carle Adrien Boureau, Pasquale Scarlino, Michele Ghini, Fabio Bersano, Niccolò Martinolli

The rise of electron spin qubit architectures for quantum computing processors has led to a strong interest in designing and integrating ferromagnets to induce stray magnetic fields for electron dipole spin resonance (EDSR). The integration of nanomagnets ...

Wiley2025

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

Mihai Adrian Ionescu, Igor Stolichnov

Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy ...

IEEE2018

Numerical analysis of zeptogram/Hz-level mass responsivity for in-plane resonant nano-electro-mechanical sensors

Mihai Adrian Ionescu

This paper presents numerical analysis of an in-plane resonant nano-electro-mechanical (NEM) sensor based on mass-detection principle using a 3D FEM electromechanical simulation combined with a NEM/MOS hybrid circuit simulation. The self-assembled linker m ...

2011

FinFET for high sensitivity ion and biological sensing applications

Mihai Adrian Ionescu, Livio Lattanzio, Sara Rigante

A double-gate (DG) fin field effect transistor (FinFET) is discussed as new label-free ion and biological sensor. Simulations as function of channel doping, geometrical dimensions, operation point and materials investigated the device response to an extern ...

2011

Double-Gate Si Nanowire FET Sensor Arrays For Label-Free C-Reactive Protein detection enabled by antibodies fragments and pseudo-super-Nernstian back-gate operation

Mihai Adrian Ionescu, Luca Capua, Hervé Stéphane Elettro

In this work we report the first CMOS-compatible label-free C-Reactive Protein (CRP) differential-mode sensors and sensing method based on double-gate Si nanowires (SiNWs) FET arrays. The sensor is first validated for pH static and dynamic sensing, showing ...

2021

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Mihai Adrian Ionescu, Nava Setter, Didier Bouvet, Igor Stolichnov, Sebastian Riester, Roman Gysel, Giovanni Antonio Salvatore

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

Cryogenic Front-to-Back Coupling in FD-SOI for Tunable Qubits by Localized Metallic Back-Gate

Mihai Adrian Ionescu, Michele Ghini, Fabio Bersano, Niccolò Martinolli, Eloi Régis L Collette

In this study, we develop and experimentally validate the integration of a localized metallic back-gate into a multi-gate silicon-on-insulator (SOI) field-effect transistor (FET), aimed at enabling front-gate coupling efficiency from room to cryogenic (mK) ...

IEEE2024

RF MEMS power sensors for ultra-low power wake-up circuit applications

Mihai Adrian Ionescu, Catherine Dehollain, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos, Wolfgang Amadeus Vitale

Power savings requirements in wake-up circuits and RFID applications can greatly benefit from the emerging RF MEM technology. In this paper we report an RF MEM power sensor that can simultaneously offer significant power savings and co-integration with wak ...

2013

Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors

Mihai Adrian Ionescu, Ji Cao

Self-aligned suspended-body single-walled (SW) carbon nanotube field-effect transistors (CNFETs) with dual lateral gates have been demonstrated. Two independent lateral gates are symmetrically placed less than 100 nm away from the CNT channel. The operatio ...

2012

New functionality and ultra low power: key opportunities for post-CMOS era

Mihai Adrian Ionescu

This paper addresses the challenges and opportunities offered by post-CMOS devices in terms of new functionality and ultra low power. It focuses on the illustration of: (i) the quest for the new electronic abrupt switches (tunnel-FET and IMOS/PIMOS) and (i ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008

Finfet with fully PH-responsive HfO2 as highly stable biochemical sensor

Mihai Adrian Ionescu, Didier Bouvet, Sara Rigante

In this work, highly scaled FinFETs (Fin Field Effect Transistors) are proposed as both sensing and circuit units of a lab-on-a-chip platform. The FinFET-based sensors with an HfO2 gate oxide demonstrate full pH-response with ΔVth ≈ 56 mV/pH. High readout ...

IEEE2014

Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications

Mihai Adrian Ionescu, Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani, Riyaz Mohammed Abdul Khadar, Pirouz Sohi

The rapid progress in high capacity communication systems is reaching extremely high data rates of 100 Gb s−1, which demands electronic switches with cut-off frequencies well above 1 THz. The excellent electron transport properties of III-V heterojunctions ...

IEEE2022

AC-Driven Aptamer-Decorated Graphene FET for Cortisol Detection

Mihai Adrian Ionescu, Sadegh Kamaei Bahmaei, Yann Christophe Sprunger, Ali Gilani

Accurately measuring cortisol levels is crucial for diagnosing and managing stress-related conditions. Among all biofluids containing cortisol, Interstitial fluid (ISF) offers distinct advantages such as stable pH, continuous extraction, and minimal contam ...

Institute of Electrical and Electronics Engineers Inc.2024

Electrical modeling and design of a wafer-level package for MEM resonators

Mihai Adrian Ionescu, Anja Skrivervik, Julien Perruisseau-Carrier, Marco Mazza

This paper presents the electrical design and characterization of a wafer-level, or 0-level, package for micro-electromechanical resonators. We start by identifying the requirements on the electrical parasitics of a packaged resonator, derived from an anal ...

Institute of Electrical and Electronics Engineers2010

Subthermionic negative capacitance ion sensitive field-effect transistor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando, Carlotta Gastaldi

One of the main advantages of Ion-Sensitive Field-Effect Transistor (ISFET) technology is the capability to exploit technological advancements initially developed for conventional FETs for logic applications, such as the employ of high-k dielectrics for th ...

2020

Compact Modeling of Homojunction Tunnel FETs

Mihai Adrian Ionescu, Antonios Bazigos, Luca De Michielis, Wladyslaw Grabinski, Arnab Biswas, Cem Alper, Nilay Dagtekin

Aggressive scaling of the supply voltage reduces the energy needed for switching of standard CMOS devices. However, advanced CMOS technologies are facing two main problems that consequently lead to higher power consumption: the complexity of a further supp ...

IEEE2014