Mihai Adrian Ionescu

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Highly energy-efficient wireless sensor nodes are a prerequisite for a sustainable operation of the Internet of things. Therefore, classical approaches for system design based on digital signal processing are not a viable solution, but system design has to ...

The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically ...

We report a novel device which exploits the internally combined quantum mechanical Band-To-Band and Barrier Tunneling mechanisms to achieve improved performances and overcome the intrinsic low current drive limitations of conventional Tunnel FETs and the 6 ...

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technolo ...

In this work we investigate the effect of visible light radiation on compact 1T-1R relaxation spiking oscillator cells based on 2-terminal Vanadium dioxide (VO2) structures. We illuminate the devices using a tunable wavelength laser between 400 and 850 nm ...

We present a CMOS-compatible double gate and label-free C-reactive protein (CRP) sensor, based on silicon on insulator (SOI) silicon nanowires arrays. We exploit a reference subtracted detection method and a super-Nernstian internal amplification given by ...

Digital circuits based on nanoelectromechanical (NEM) relays hold out the potential of providing an energy efficiency unachievable by conventional CMOS technology. This paper presents a detailed analysis of the operating characteristics of fabricated curve ...

In this work, we investigate the intrinsic cycle-to-cycle variations in a spiking temperature-sensitive neuron, based on the resistive switching of a Vanadium dioxide (VO2) two-terminal device. We study how this phenomenon impacts the spike rate jitter, an ...

Silicon nanowire (Si NW) sensors have attracted great attention due to their ability to provide fast, low-cost, label-free, real-time detection of chemical and biological species. Usually configured as field effect transistors (FETs), they have already dem ...

Among the different types of bilayer tunneling field-effect transistors exploiting interband tunneling phenomena with tunneling directions aligned with gate-induced electric fields, the utilization of InAs/GaSb channels proves to be an appealing means to e ...

In this paper we report the fabrication and detailed electrical characterization of a novel test structure based on Metal-Ferroelectric-Metal-Oxide-Semiconductor transistor with internal metal contact, aiming at extracting the surface potential and the investigation of internal voltage. This structure could possibly be used for the investigation of the differential voltage amplification expected due to negative capacitance effect. The proposed test structure is p-Fe-FET with a thin Al contact in-between the

The fabrication of crossbar memories with sublithographic features is expected to be feasible within several emerging technologies; in all of them, the nanowire (NW) decoder is a critical part since it bridges the sublithographic wires to the outer circuit ...

We present the successful fabrication of horizontally grown and dense carbon nanotube (CNT) membranes in situ. A TiN/Al2O3/TiN stack is first patterned to be employed as a support for the CNT growth. Iron is then evaporated with a 45 degrees tilt angle on ...

NANOSIL Network of Excellence [NANOSIL NoE web site ], funded by the European Commission in the 7th Framework Programme (ICT-FP7, no 216171), aims at European scale integration of the excellent European research laboratories and their c ...

In this paper we present the top-down fabrication of gate-all-around (GAA) and body-tied @W-gate devices by a combination of etching and oxidation steps resulting in a local silicon-on-insulator structure. The GAA has advantages in terms of enhanced curren ...

A technique to deterministically manipulate individual Carbon Nanotubes (CNT) has been the brick-wall for the boom of CNT based devices. Here we demonstrate dielectrophoresis as an efficient technique to trap individual Single Walled Carbon Nanotubes (SWCN ...

In this work we report the fabrication, characterization and validation of a cortisol biosensor, together with a unified predictive calibrated model. We demonstrated the possibility of using a classical submicron semiconductor FET as the transducer for a c ...

RF microelectromechanical systems (MEMS) capacitive switches for two different dielectrics, aluminum nitride (AlN) and silicon nitride (Si3N4), are presented. The switches have been characterized and compared in terms of DC and RF performance (5-40 GHz). Switches based on AlN have higher down-state capacitance for similar dielectric thicknesses and provide better isolation and smaller insertion losses compared to Si3N4 switches. Experiments were carried out on RF MEMS switches with stiffening bars to preven

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

Mihai Adrian Ionescu

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Spike-Based Sensing and Communication for Highly Energy-Efficient Sensor Edge Nodes

Negative capacitance semiconductor sensor

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

An Experimental Study Of The Photoresponse Of 1T-1R Oscillators Based On Vanadium Dioxide: Towards Spiking Sensing Systems

Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation

Energy and Latency Optimization in NEM Relay-Based Digital Circuits

Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO2 Spiking Neuron

Detection of ultra-low protein concentrations with the simplest possible field effect transistor

Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

Test structure and method for the experimental investigation of internal voltage amplification and surface potential of ferroelectric MOSFETs

Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories

In-situ grown horizontal carbon nanotube membrane

NANOSIL network of excellence--silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

Prospects for logic-on-a-wire

Trapping Individual Carbon Nanotubes

Extended-Gate FET cortisol sensor for stress disorders based on aptamers-decorated graphene electrode: Fabrication, Experiments and Unified Analog Predictive Modeling

RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor