Mihai Adrian Ionescu

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In this paper we report the first experimental demonstration of Micro-Electro-Mechanical resonator based on a Carbon Nanotube-Array-Suspended-Gate-Field-Effect-Transistor (CNT-SGFET). A dense array of single-walled CNT aligned by ac-dielectrophoresis technique forms the suspended gate electrode of a conventional silicon based FET. Resonance frequency of 120 MHz is reported. An equivalent electrical model has been developed for the resonator.

In this paper we demonstrate experimentally and discuss the negative differential resistance (NDR) in dual-gated graphene field effect transistors (GFETs) at room temperature for various channel lengths, ranging from 200 nm to 5 mu m. The GFETs were fabric ...

The concept, objectives and work proposed by the Guardian Angels for Smarter Life FET Flagship Pilot are designed to result in visionary, science driven, goal-oriented, large-scale, multidisciplinary research flagship proposal, nucleated from ICT future and emerging technologies. Guardian Angels are defined as zero-power intelligent autonomous systems-of-systems featuring sensing, computation and communication and being powered by advanced energy harvesters. In this paper we describe the zero-power technolo

Silicon nanowire (SiNW) field effect transistors (FETs) have been widely investigated as biological sensors for their remarkable sensitivity due to their large surface to volume ratio (S/V) and high selectivity towards a myriad of analytes through function ...

A low power analog frontend (AFE) for Ion-Sensitive Field effect Transistor sensor readout presented. The AFE is demonstrated with off-the-shelf components. It includes a biasing circuit to an ISFET sensor, a noise rejecting current readout circuit, and a igma-delta analog to digital converter. The digital output can be interpreted by a simple counter to acquire the ion-concentration in a drop of liquid on top of the calibrated ISFET sensor. A PH sensing experiment is performed validate the AFE. Total power

We investigate the effect of pseudo-bilayer configurations at low operating voltages (

In this paper, we demonstrate the integration of local oxidation and metal-gate strain technologies to induce 3.3%/5.6 GPa uniaxial tensile strain/stress in 2 μm long suspended Si nanowire MOSFETs, the highest process-based stress record in MOSFETs until now, by elastic local buckling. Significant stress level modulation in the channel from 1.2 to 5.6 GPa on a single wafer is demonstrated for the first time by varying the NW width. The GAA Si NW MOSFET with 5.6 GPa uniaxial tensile stress is characterized a

Organic FET transistors (OFETs) were fabricated on silicon substrates using pentacene as active organic layer and gold source and drain contacts. OFETs were used as test structures in order to study carriers photogeneration effect in organic layers. Photog ...

High frequency wine-glass mode bulk MEMS resonators actuated by means of capacitive transduction have been fabricated by using solid-gaps based on polyvinylidenefluoride-trifluoroethylene (PVDF-TrFE). The fabrication process flow of patterned PVDF-TrFE gaps applied in RF MEMS is presented for the first time. Measurements of the polarization of the material and the frequency and voltage dependence of the capacitance in the actuation gaps of the resonators are provided.

To address the need for large area dry graphene transfer techniques in Nanomechanical applications we use transfer printing to suspend large areas of graphene on pre-patterned substrates with cavities. We find that using this method, clean suspended graphe ...

System for monitoring the hydration status of a living being by exploiting the modulation of backscattered RF electromagnetic waves from a wearable patched placed on the skin, said system comprising: a RF-tag adapted to be directly or indirectly fixed to t ...

In this work we present an in-memory computing platform based on coupled VO2 oscillators fabricated in a crossbar configuration on silicon. Compared to existing platforms, the crossbar configuration promises significant improvements in terms of area densit ...

In conventional planar EHBTFETs, the interband tunneling phenomena responsible for the drive current takes place vertically in the section of the channel where top and bottom gates overlap. As a result, the horizontal extent of this overlapping between gat ...

A charge sensing device for sensing charge variations in a charge storage area includes: a TFET having at least one sense gate; and a capacitive coupling for coupling the charge storage area with the sense gate. ...

The recently proposed PIMOS transistor can offer, by appropriate operation, non-hysteretic abrupt off-on transitions due to impact ionization if the action of its parasitic bipolar transistor is minimized. This work proposes non-hysteretic abrupt inverter ...

A 1.25 m thin SOI micro-electro-mechanical (MEM) resonator with a quality factor of 100’000 at 24.6 MHz is demonstrated. A nanogap fabrication process allows the fabrication of < 200 nm gaps, allowing for low polarization voltages. A motional resistance of ...

The need for new accurate temperature monitoring is becoming high, especially with the proliferation of IoT monitoring and biological applications. In this work, we report the design, fabrication and electrical characterization results of a new type of res ...

The crossed junction formed between a multi walled carbon nanotube (MWCNT) and a bundle of single walled carbon nanotube (SWCNT) is investigated. The junction is fabricated by orthogonally assembling the MWCNT and SWCNT by a two-step dielectrophoresis proc ...

Mihai Adrian Ionescu

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Tunable Electromechanical Resonator Based On Carbon Nanotube Array Suspended Gate Field Effect Transistor (Cnt-Sgfet)

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

Guardian Angels for a Smarter Life: Enabling a Zero-Power Technological Platform for Autonomous Smart Systems

Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor

Low power analog frontend for ISFET sensor readout

Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor

Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling

Charge carriers photogeneration in pentacene field effect transistors

Solid-gap resonators based on PVDF-TrFE

Large area suspended graphene for nano-mechanical devices

System for the remote monitoring of the hydration status of a living being

Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET

Electrical conduction in 10 nm thin polysilicon wires from 4 to 400 K and their operation for hybrid memory

Sensing device for sensing minor charge variations

Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits

Nano-gap high quality factor thin film SOI MEM resonators

Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films

Carbon Nanotube Crossed Junction by Two Step Dielectrophoresis