Mihai Adrian Ionescu

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This paper explores the design and fabrication of Micro-Electro-Mechanical capacitors based on vertical carbon nanotube arrays. The devices are realized in vertically single-clamped parallel plate configurations using a dense array of vertically grown MWCNTs on metal lines. The capacitance tuning is performed by electrostatic actuation. From the pull-in voltage value, based on novel analytical model of single-clamped vertical CNT membranes, we extract an equivalent Young modulus of the CNT array ranging in

NOVELTY - A micro-electro-mechanical-system (MEMS) is manufactured by the use of a sacrificial layer that is made of silicon. USE - The invention is used in surface micromachining for the manufacture of a MEMS containing a suspended metal layer or MEMS device architecture. MEMS device is a suspended gate metal oxide semiconductor field effect transistor (SG-MOSFET). It is used as radio-frequency capacitive switch, current switch, radio-frequency tuneable capacitor, magnetic field sensor, accelerometer, and

For the first time, a compact model for suspended gate (SG) FET valid for entire bias range is proposed. The model is capable of simulating both pull-in and pull-out effects, which are the two important phenomena of this device. A novel hybrid numerical si ...

This paper reports a novel fully integrated low power multi-sensing smart system, which, by wafer-level 3D heterogeneous integration of Ion Sensitive Fully Depleted (FD) FETs and SU-8 micro/nanofludics, achieves the first of its kind wearable multi-sensing ...

Accurate detection of cortisol hormone is essential for diagnosing and managing stress-related disorders. Found in various bodily fluids like tears, blood, sweat, and interstitial fluid (ISF), ISF stands out for its stable pH, continuous extraction, and re ...

The fabrication of a Nanoelectromechanical System (NEMS) capacitive switch consisting of a suspended multilayer graphene membrane, doubly clamped on a coplanar waveguide (CPW) is presented and its RF performance is evaluated. The scattering parameters are ...

In this paper we report on the effect of the environment on the SiO₂/pentacene interface. Two batches of bottom-contact pentacene thin-film transistors have been fabricated with a 100 nm thick SiO₂ as dielectric. Considerable shifts of the threshold voltag ...

This paper reports on the design and fabrication of a fully integrated antenna beam steering concept for airborne applications at 17 GHz. The system is based on a single wafer process including a dipole antenna, a balun and a 2-bit distributed MEMS phase shifter (in a 7 x 3 mm high-resistivity-silicon dice). To our knowledge, it is the first time that such integration has been done. First results of individual devices are reported and simulations of the whole concept are originally presented. (C) 2009 Elsev

This paper presents a novel high-frequency filter concept based on a single MEMS capacitive shunt structure using meander arm inductance. Tuning ranges of the central frequency in the order of 55% are experimentally demonstrated for filters operating betwe ...

This work reports for the first time on a cascadable NMOS inverter based on punch-through impact ionization MOSFET (PIMOS) integrated on a single body-tied silicon wire. The PIMOS device acts as a single-transistor-latch and shows abrupt current switching ...

n-linear impedance characteristics of VO2 offer solutions to highly sensitive radio-frequency (RF), millimeterwave (mm-wave), and terahertz (THz) detectors. We demonstrate high-speed broadband sensibility of miniaturized VO2 switches by utilizing the nonli ...

This paper discusses three categories of small slope electronic switches: the Tunnel FET the IMOS and the NEM-FET which are expected to bring added value compared to CMOS by presenting an abrupt subthreshold slope, smaller than the physical limit, 60mV/decade, of the solid-state MOS transistor at room temperature. Recent results and future promises are reported.

Visual capabilities recovery for some kind of illness is possible through subretinal implantable device stimulation. Two possible architectures for retinal pixel are proposed, fabricated in 0.35mum CMOS and compared, including evaluation of electronic response on a human-tissue-like interface. In these solutions, power consumption has been proved to be dominated by electrode stimulation and, in normal light condition, typical consumption is below 1 mW/pixel. The proposed pixel architectures, with 120 mum (L

An extensive parameter analysis is performed on the electron-hole bilayer tunnel field-effect transistor (EHBTFET) using a 1-D effective mass Schrodinger-Poisson solver with corrections for band non-parabolicity considering thin InAs, In0.53Ga0.47As, Ge, S ...

Recent studies on memristive materials and technologies have expanded beyond conventional memory elements, driven by their potential application in novel information processing concepts. Among these materials, conductive domain walls in ferroics are especi ...

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive a ...

We will present and discuss some of the great research challenges and opportunities related to 21st century energy efficient computing and sensing devices and systems, in the context of the Internet of Things (IoT) revolution. In the future, major innovati ...

We propose and experimentally demonstrate a novel circuit based on graphene FETs (GFETs) showing excellent negative differential resistance (NDR) characteristics at room temperature. The proposed GNDR circuit exploits a closed loop connection of 1-GFET wit ...

Visual capabilities recovery for some kind of illness is possible through subretinal implantable device stimulation. Two possible approaches for retinal pixel are proposed, fabricated in 0.35mum CMOS, tested and compared including electronic response on a human tissue like interface. In these solutions, power consumption has been proved to be dominated by electrode stimulation and, in normal condition, typical consumption is below 1 mW. The proposed pixel architectures, with 120 mum (LICOS) and 100 mum (WAT

The analysis of quantum mechanical confinement in recent germanium electron-hole bilayer tunnel field-effect transistors has been shown to substantially affect the band-to-band tunneling (BTBT) mechanism between electron and hole inversion layers that cons ...

Mihai Adrian Ionescu

Chattez avec Graph Search

Micro-electro-mechanical capacitors based on vertical carbon nanotube arrays

Manufacture of micro-electro-mechanical-system using sacrificial layer made of silicon, useful for micro-electro-mechanical-system device architecture, e.g. radio-frequency capacitive switch and current switch

Compact Modeling of Suspended Gate FET

Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications

Aptamer-Decorated Graphene Channel Array with Liquid-Gating for Sensing Cortisol Stress Hormone

Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches

Pentacene - SiO2 interface: Role of the environment prior to pentacene deposition and its impact on TFT DC characteristics

Dipole antenna and distributed MEMS phase shifter fully integrated in a single wafer process for beam steering applications

Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance

Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch

Subthreshold VO2 vertical switches for large-bandwidth millimeter-wave and sub-terahertz detection

Small slope micro/nano-electronic switches

CMOS pixel for subretinal implantable prothesis

The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization

Graphene-enhanced ferroelectric domain wall high-output memristor

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

The Future of Electronics: Silicon to Cloud Technologies

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

CMOS image sensors for subretinal implant system

Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor