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Mihai Adrian Ionescu

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Publications associées (403)

Semiconductor device and method of manufacturing a semiconductor device

Didier Bouvet, Mihai Adrian Ionescu, Kirsten Emilie Moselund

The local bending of a silicon nanowire induces tensile strain in the wire due to the stretching of the silicon lattice. This in turn enhances the mobility of the free carriers (electrons) in the direction of transport along the wire. Thus, for example, wh ...

2009

Centre frequency and bandwidth tunable bandpass filter based on RF MEMS (10-14 GHz)

Catherine Dehollain, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Suat Ayoz

This paper presents a novel tunable bandpass filter design with independent control of both the centre frequency and the bandwidth by means of analogue-series and digital-shunt MEMS capacitors. The filter is designed for operation in X and Ku bands with 4 ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)

Maher Kayal, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an Omega-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt curren ...

2009

Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography

Mihai Adrian Ionescu, Jürgen Brugger, Dimitrios Tsamados, Katrin Sidler Arnet, Andreea Veronica Savu, Nenad Cvetkovic

This paper presents new results on miniaturized organic thin film transistors (TFT) fabricated on a spin coated polyimide (PI) film. Patterning steps, that are vital for the integrity and electrical performances of the organic TFT, were performed using res ...

Elsevier Science, Reg Sales Off, Customer Support Dept, 655 Ave Of The Americas, New York, Ny 10010 Usa2009

Investigation of oxidation-induced strain in a top-down Si nanowire platform

Didier Bouvet, Mihai Adrian Ionescu, Mohammad Najmzadeh

In this paper, we investigate the effect of different process parameters on oxidation-induced strain (OIS) into a doubly-clamped silicon nanowire FET to control and finally, enhance carrier mobility. Spacer technology together with sacrificial thermal oxid ...

Elsevier2009

Self-sustained Low Power Oscillator Based on Vibrating Body Field Effect Transistor

Mihai Adrian Ionescu, Daniel Grogg

The operation of a vibrating body field effect transistor (VB-FET) near pull-in is exploited to experimentally demonstrate a self-oscillating device. The positive feedback mechanism is triggered at the onset of inversion in a depleted VB-FET channel, near ...

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Didier Bouvet, Nava Setter, Alexander Tagantsev, Igor Stolichnov, Mihai Adrian Ionescu, Roman Gysel, Giovanni Antonio Salvatore, Sebastian Riester

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

AIP American Institute of Physics2009

Highly Tunable Band-Stop Filters Based on AIN RF MEM Capacitive Switches with Inductive Arms and Zipping Capacitive Coupling

Catherine Dehollain, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Dimitrios Tsamados

This paper presents wideband tunable band-stop filters working in the Ku to Ka-band frequencies based on a miniature single-MEM device combining a central capacitive MEM switch with AlN dielectric and inductive suspension arms. An outstanding 55% tuning ra ...

IEEE2009

9 MHz vibrating body FET tuning fork oscillator

Maher Kayal, Mihai Adrian Ionescu, Daniel Grogg, Fabrizio Lo Conte

A 9.4MHz micro-electromechanical oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) is presented in this work. The tuning fork VB-FET used in this work provides a high quality factor of 9400 in the open-loop configuration and a low equiv ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance

Catherine Dehollain, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

This paper presents a novel high-frequency filter concept based on a single MEMS capacitive shunt structure using meander arm inductance. Tuning ranges of the central frequency in the order of 55% are experimentally demonstrated for filters operating betwe ...

2009

Double-Gate Pentacene TFTs with Improved Control in Subthreshold Region

Mihai Adrian Ionescu, Jürgen Brugger, Dimitrios Tsamados, Katrin Sidler Arnet, Jyotshna Bhandari, Andreea Veronica Savu, Nenad Cvetkovic

In this work a double-gate pentacene TFT architecture is presented. The devices are fabricated on a polyimide substrate using three aligned levels of stencil lithography along with standard photolithography, which enable a soft yet well controlled device p ...

IEEE2009

Ad-Hoc Wireless Sensor Networks For Exploration Of Solar-System Bodies

Valentin Mitev, Mihai Adrian Ionescu, Pierre-André Farine, Herbert Shea, Cyril Botteron

In this work, we evaluate the exploration of the Solar system by ad-hoc wireless sensor networks (WSN), i.e. networks where all nodes (either moving or stationary) can both provide and relay data. The two aspects of self-organization and localization are t ...

Elsevier2009

High-quality factor MEMS based oscillator: Silicon 9 MHz oscillator with low phase noise and high quality factor

Maher Kayal, Mihai Adrian Ionescu, Daniel Grogg, Fabrizio Lo Conte

In this paper, an oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) working at 9.4MHz is presented. The electrical characteristics of this active MEM resonator are detailed for static and dynamic operation. The benefit of the intrinsic ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Editorial

Mihai Adrian Ionescu

Elsevier2008

Nano-gap high quality factor thin film SOI MEM resonators

Mihai Adrian Ionescu, Daniel Grogg, Marco Mazza, Nicoleta-Diana Ciressan, Hüseyin Cumhur Tekin, Dimitrios Tsamados

A 1.25 m thin SOI micro-electro-mechanical (MEM) resonator with a quality factor of 100’000 at 24.6 MHz is demonstrated. A nanogap fabrication process allows the fabrication of < 200 nm gaps, allowing for low polarization voltages. A motional resistance of ...

2008

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Didier Bouvet, Nava Setter, Igor Stolichnov, Mihai Adrian Ionescu, Roman Gysel, Giovanni Antonio Salvatore, Sebastian Riester

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

A fabrication method for silicon beams and membranes defined in lateral and vertical dimensions, as well as superposed silicon membranes, all realized in bulk silicon using only one lithographic step is proposed. This proposal is based on observations made ...

2008

Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)

Mihai Adrian Ionescu, Jyotshna Bhandari

We have investigated the p- and n-type dopants in thin SGOI (20 nm) material obtained by Ge enrichment. The samples are doped with either BF2 or arsenic or phosphorus and then annealed with either a spike or a 15 s rapid thermal annealing in a temperature ...

2008

Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics

Didier Bouvet, Mihai Adrian Ionescu, Kirsten Emilie Moselund

In this letter, an abrupt NMOS inverter based on punch-through impact ionization is demonstrated for the first time. The slopes for both the rising and the falling edge of the ID(V GS) device characteristics are less than 10 mV/dec ...

Institute of Electrical and Electronics Engineers2008

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

Mihai Adrian Ionescu, Christoph Eggimann, Yogesh Singh Chauhan, Dimitrios Tsamados

An analytical model for the suspended-gate field-effect transistor (SGFET), dedicated to the dc analysis of SGFET logic circuits, is developed. The model is based on the depletion approximation and expresses the pull-in voltage, the pull-out voltage, and t ...

2008

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