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Mihai Adrian Ionescu

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Related publications (403)

Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits

Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

The recently proposed PIMOS transistor can offer, by appropriate operation, non-hysteretic abrupt off-on transitions due to impact ionization if the action of its parasitic bipolar transistor is minimized. This work proposes non-hysteretic abrupt inverter ...

2008

SWCNT/MWCNT Crossed Junction by Two-Step Dielectrophoresis

Mihai Adrian Ionescu, Anupama Arun

2008

Pentacene - SiO2 interface: Role of the environment prior to pentacene deposition and its impact on TFT DC characteristics

Mihai Adrian Ionescu, Jürgen Brugger, Dimitrios Tsamados, Katrin Sidler Arnet, Nenad Cvetkovic

In this paper we report on the effect of the environment on the SiO₂/pentacene interface. Two batches of bottom-contact pentacene thin-film transistors have been fabricated with a 100 nm thick SiO₂ as dielectric. Considerable shifts of the threshold voltag ...

IEEE2008

Focussed ion beam based fabrication of micro-electro-mechanical resonators

Mihai Adrian Ionescu, Daniel Grogg, Nicoleta-Diana Ciressan

A simple and fast process to fabricate micro-electro-mechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented. The proposed process is realized on both 350 nm and 1.5 μm thin silicon-on-insulator (SOI) substrates, evaluat ...

Springer-Verlag2008

Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

This paper presents an in-depth study of the design, modelling, circuit parameter extraction and characterization of a distributed MEMS digital microwave phase shifter. Bridge-type digital capacitors periodically loaded on a 5 mm CPW (with an actuation vol ...

2008

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

Didier Bouvet, Maher Kayal, Vincent Pott, Mihai Adrian Ionescu, Cédric Meinen, Kirsten Emilie Moselund

This work reports on memory applications of punch-through impact ionization single-transistor latch (PIMOS), showing abrupt current switching (3-10mV/dec.) as well as hysteresis in both ID(VDS) and ID(VGS). A capacitor-less 1PIMOS - 1 MOSFET DRAM memory is ...

2008

Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

Didier Bouvet, Mihai Adrian Ionescu, Dimitrios Tsamados, Donatello Acquaviva

The design, fabrication and characterization of Micro-electro-mechanical metal-air-insulator-semiconductor (MEM-MAIS) diode switch are originally reported. An abrupt switching from off-state to Fowler-Nordheim tunneling current in on-state is induced by th ...

2008

Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory

Didier Bouvet, Nava Setter, Igor Stolichnov, Mihai Adrian Ionescu, Giovanni Antonio Salvatore

A polymer based Ferroelectric gate FET at 1T non-volatile memory on bulk silicon is demonstrated. Spin-coated 40 nm and 100 nm P(VDF-TrFE) (70%-30%) ultra-thin films have been integrated onto 10 nm SiO₂ layer as gate dielectric into a conventional silicon ...

2008

NANOSIL network of excellence--silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Katherine Boucart

NANOSIL Network of Excellence [NANOSIL NoE web site ], funded by the European Commission in the 7th Framework Programme (ICT-FP7, no 216171), aims at European scale integration of the excellent European research laboratories and their c ...

2008

3D Nanostructured Silicon Relying on Hard Mask Engineering for High Temperature Annealing (HME-HTA) Processes for Electronic Devices

Mihai Adrian Ionescu, Matthieu Bopp

Annealing silicon at high temperatures in hydrogen ambiance has been reported to induce surface diffusion of silicon; in these conditions, adapted 2D arrays of trenches etched in Bulk Si are transformed into buried cavities creating suspended membranes. A ...

2008

New functionality and ultra low power: key opportunities for post-CMOS era

Mihai Adrian Ionescu

This paper addresses the challenges and opportunities offered by post-CMOS devices in terms of new functionality and ultra low power. It focuses on the illustration of: (i) the quest for the new electronic abrupt switches (tunnel-FET and IMOS/PIMOS) and (i ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008

Multi-gate vibrating-body field effect transistor (VB-FETs)

Mihai Adrian Ionescu, Daniel Grogg, Marco Mazza, Dimitrios Tsamados

This paper reports on the design, fabrication and detailed characteristics of multi-gate vibrating-body field effect transistors (VB-FETs). Double-gate and four-gate VB-FETs with resonance frequencies of 2 MHz and 71 MHz, respectively, are successfully dem ...

2008

Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters

Mihai Adrian Ionescu, Christoph Eggimann, Yogesh Singh Chauhan, Dimitrios Tsamados

This paper proposes, the investigation of the Suspended Gate Field-Effect Transistor (SG-FET) small-slope switch based on a hybrid numerical simulation approach combining ANSYSTM Multiphysics and ISE-DESSISTM in a self-consistent system. The proposed numer ...

2008

Nano-gap micro-electro-mechanical bulk lateral resonators with high quality factors and low motional resistances on thin silicon-on-insulator

Mihai Adrian Ionescu, Daniel Grogg, Marco Mazza, Nicoleta-Diana Ciressan

The design, fabrication and experimental investigation of 22-25 MHz fragmented-membrane MEM bulk lateral resonators (BLR) with 100 nm air-gaps on thin (1 and 6 [mu]m) silicon-on-insulator (SOI) are reported. Quality factors as high as 120,000 and motional ...

2008

Prospects for logic-on-a-wire

Didier Bouvet, Yusuf Leblebici, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Giovanni De Micheli, David Atienza Alonso, Mohamed Haykel Ben Jamaa

In this paper we present the top-down fabrication of gate-all-around (GAA) and body-tied @W-gate devices by a combination of etching and oxidation steps resulting in a local silicon-on-insulator structure. The GAA has advantages in terms of enhanced curren ...

2008

Double gate movable body Micro-Electro-Mechanical FET as hysteretic switch: Application to data transmission systems

Maher Kayal, Mihai Adrian Ionescu, Cédric Meinen, Daniel Grogg, Hüseyin Cumhur Tekin, Dimitrios Tsamados

This paper reports on the fabrication, experimental characterization and data transmission application of a double-gate movable body FET. As its name suggests, the proposed movable-body Micro-Electro-Mechanical FET (MB-MEMFET) is a hybrid MEMS-semiconducto ...

2008

Silicon nanostructuring for 3D bulk silicon versatile devices

Mihai Adrian Ionescu, Matthieu Bopp

A fabrication method for silicon beams and membranes defined in lateral and vertical dimensions, as well as superposed silicon membranes, all realized in bulk silicon using only one lithographic step is proposed. This proposal is based on observations made ...

2008

Trapping Individual Carbon Nanotubes

Mihai Adrian Ionescu, Anupama Arun

A technique to deterministically manipulate individual Carbon Nanotubes (CNT) has been the brick-wall for the boom of CNT based devices. Here we demonstrate dielectrophoresis as an efficient technique to trap individual Single Walled Carbon Nanotubes (SWCN ...

2008

Oxide charging and memory effects in suspended-gate FET

Mihai Adrian Ionescu, Nicolas Abelé

An original study of the dielectric charging in a suspended gate FET device (SG-FET) and its use for memory applications is reported. Combining a movable conductive gate with the ability to retain charge on top of the dielectric layer of FET device, a MEMS ...

2008

Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

This work reports for the first time on a cascadable NMOS inverter based on punch-through impact ionization MOSFET (PIMOS) integrated on a single body-tied silicon wire. The PIMOS device acts as a single-transistor-latch and shows abrupt current switching ...

2008

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