Mihai Adrian Ionescu

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In this letter, the occupancy and tunneling probabilities of interband tunneling devices are studied, pointing out the fundamental function of the source Fermi-Dirac distribution. Particularly, the reason for the degraded subthreshold swing, which is typic ...

A tunneling field effect transistor for light detection, including a p-type region connected to a source terminal, a n-type region connected to a drain terminal, an intrinsic region located between the p-type region and the n-type region to form a P-I junc ...

We report a novel resist-assisted dielectrophoresis method for single-walled carbon nanotube (SWCNT) assembly. It provides nanoscale control of the location, density, orientation and shape of individual SWCNTs. Sub-50 nm accuracy and a yield higher than 85% have been achieved. Using the method, we demonstrate suspended-body SWCNT field-effect transistors (FETs) with back-gate and sub-100 nm air-gap lateral-gate configurations. The suspended-body SWCNT FETs show excellent electrical characteristics with I-on

This paper presents a pressure sensor based on a variable capacitor formed by a movable polysilicon sealed membrane sensitive to pressure. When operated as a pressure sensor two operation regions are observed, an exponentially sensitivity region at low pre ...

A detailed analysis of capacitance behavior of high-voltage MOSFET (HV-MOS), for example, LDMOS, using device simulation is made. The impact of lateral nonuniform doping and drift region are separately analyzed. It is shown that the peaks in C-GD and C-GS ...

We report for the first time the optimization of the channel lateral strain profile as a new technological booster for improved performance of multi-gate n-channel MOSFET. We find that quasi-uniform or flat-Gaussian-close-to-the-drain profiles are optimum for the Ion boosting of sub-50nm scaled MOSFETs, while the penalty on Ioff and subthreshold slope is minimum. The reported predictions use realistic lateral uniaxial strain profiles, with peaks up to few GPa's and average values of hundreds of MPa's. ©2009

This paper reports a simulation based study of the non-local tunneling model using a commercially available technology computer-aided design (TCAD) device simulator. Single gate Tunnel FET devices with 400nm gate length based on SOI technology are measured ...

This paper presents an in-depth study of the design, modelling, circuit parameter extraction and characterization of a distributed MEMS digital microwave phase shifter. Bridge-type digital capacitors periodically loaded on a 5 mm CPW (with an actuation vol ...

We demonstrate the room-temperature operation of a silicon nanoelectromechanical resonant-body field effect transistor (RB-FET) embedded into phase-locked loop (PLL). The very-high frequency resonator uses on-chip electrostatic actuation and transistor-bas ...

In this work, tunable MEMS capacitors are realized using a vertically grown carbon nanotube array. The vertical CNT array forms an effective CNT membrane, which can be electrostatically actuated like the conventional metal plates used in MEMS capacitors. T ...

Dense array of horizontal carbon nanotubes (CNTs) connected to electrodes is a basic building block for devices in a wide field of applications such as interconnect lines or micro-electromechanical systems (MEMS) for sensing for instance. For interconnects ...

Silicon-based partially gated tunnel FETs are characterized under optical and electrical excitation. Most significant outcomes of the experiments are (1) unique characteristics, namely, light induced negative transconductance and optically tunable output r ...

A simple and fast process to fabricate micro-electro-mechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented. The proposed process is realized on both 350 nm and 1.5 μm thin silicon-on-insulator (SOI) substrates, evaluat ...

This paper reports on the potential of RF-MEMS technology to improve and miniaturize new functions in Radar front end and antenna modules. The insertion of new MEMS components and subsystems, using RF-MEMS switches, filters and phase shifters, in radar front end are reported in this article and their characterization results are discussed. © 2009 EuMA.

We present the fabrication and high frequency characterization of a capacitive nanoelectromechanical system (NEMS) switch using a dense array of horizontally aligned single-wall carbon nanotubes (CNTs). The nanotubes are directly grown onto metal layers wi ...

Mihai Adrian Ionescu

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Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

One Transistor Active Pixel Sensor with Tunnel FET

Resist-assisted assembly of single-walled carbon nanotube devices with nanoscale precision

MEMS Capacitive Pressure Sensor Based on Polysilicon Sealed Membrane

Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs

Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs

TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model

Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications

Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor

Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling

Low temperature investigation of electrical conduction in polysilicon: simulation and experiment

Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines

Study of Fin-Tunnel FETs with doped pocket as Capacitor-less 1T DRAM

Horizontal growth of dense carbon nanotube membranes for interconnects and sensors

Partially gated lateral tunnel field effect transistor for optical applications

Focussed ion beam based fabrication of micro-electro-mechanical resonators

Nanowire for Room Temperature Operated Hybrid CMOS-‘NANO’ Integrated Circuits

New Logic Family Based on Hybrid MOSFET-Polysilicon Nano-Wires

X-band MEMS technology for integrated Radar modules

Capacitive nanoelectromechanical switch based on suspended carbon nanotube array