Mihai Adrian Ionescu

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In this work we establish novel analytical and small signal circuit modeling of two major effects that co-exist in active Micro-Electro-Mechanical resonators: charge and piezoresistance modulations. Analytical expressions for the output current of vibrating body field effect transistors including capacitive, FET and piezoresistive current components are established and an equivalent small signal circuit is validated experimentally. Two design cases of vibrating FETs are studied and analyzed in detail: (i) a

In this paper, we report formation of GAA buckled dual Si nanowire MOSFETs including two sub-80 nm Si cores on bulk Si using 0.8 mu m optical lithography and local oxidation for the first time. 0.833 GPa uniaxial tensile stress is measured in the buckled s ...

This work reports on memory applications of punch-through impact ionization single-transistor latch (PIMOS), showing abrupt current switching (3-10mV/dec.) as well as hysteresis in both ID(VDS) and ID(VGS). A capacitor-less 1PIMOS - 1 MOSFET DRAM memory is ...

This paper reports the fabrication and electrical characterization of high tuning range AlSi RF MEMS capacitors. We present experimental results obtained by a surface micromachining process that uses dry etching of sacrificial amorphous silicon to release ...

This paper reports on the fabrication, experimental characterization and data transmission application of a double-gate movable body FET. As its name suggests, the proposed movable-body Micro-Electro-Mechanical FET (MB-MEMFET) is a hybrid MEMS-semiconducto ...

The present invention concerns a biosensor (1) comprising: a source element (13); a drain element (17); a semiconductor channel element between the source element (13) and the drain element (17) for forming an electrically conductive channel with adjustabl ...

We investigate the effect of asymmetric configurations on the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) and assess the improvement that they provide in terms of boosting the typically very low ON current levels ...

We report the universal boosting impact of a true negative capacitance (NC) effect on digital and analog performances of Tunnel FETs (TFETs), mirrored for the first time in near hysteresis-free experiments and exploiting the S-shaped polarization character ...

We propose, fabricate, and experimentally demonstrate a circuit based on graphene field-effect transistors (GFETs) showing enhanced negative differential resistance (NDR) characteristics at room temperature. The proposed graphene NDR (GNDR) circuit consist ...

Nanoelectromechanical systems (NEMS) offer the potential to revolutionize fundamental methods employed for signal processing in today's telecommunication systems,1-4 owing to their spectral purity and the prospect of integration with existing technology. I ...

The design, fabrication and experimental investigation of 21MHz MEM Bulk Lateral Resonators (BLR) on 1.5 mu m Silicon-On-Insulator (SOI) Fragmented Membranes with 100nm air-gaps are reported(#). Quality factors as high as 33'000 are measured under vacuum at room temperature, with 20V DC bias and low AC-power. The influence of temperature on the resonance frequency and quality factor is studied and discussed from 80K and 380K. A very high quality factor of 182'000 and a motional resistance of 165k Omega, are

Impact of physical parameters of ferroelectric layer on the performance of Negative Capacitance (NC) MOSFETs is experimentally studied in this paper. Electrical behaviors of PZT-based and Si:HfO2-based NC-FETs are investigated and discussed. In a PZT-based ...

We propose and experimentally demonstrate topgated complementary n- and p-type black phosphorous FETs by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 layer. Pre-patterned electrodes offer the possibility of reducing the exposure time of exfoliated flakes to oxidant agents with respect to top-contacted devices and maximize the accessible area for sensing applications. The devices are realized by exfoliating multilayer black phosphorous flakes on top of pre-patterned embedded so

This paper presents a novel tunable bandpass filter design with independent control of both the centre frequency and the bandwidth by means of analogue-series and digital-shunt MEMS capacitors. The filter is designed for operation in X and Ku bands with 4 pre-selected centre frequencies (from 10 GHz to 14 GHz) and with a bandwidth tunability of 70% (variable between 500 MHz and 1 GHz). The filter originally includes a fine frequency tuning to correct the centre frequency position that slightly and intrinsic

Nanoelectromechanical systems (NEMS) as integrated components for ultrasensitive sensing, time keeping, or radio frequency applications have driven the search for scalable nanomechanical transduction on-chip. Here, we present a hybrid silicon-on-Insulator platform for building NEM oscillators in which fin field effect transistors (FinFETs) are integrated into nanomechanical silicon resonators. We demonstrate transistor amplification and signal mixing, coupled with mechanical motion at very high frequencies

We present a CMOS-compatible, solvent-free nitrogen plasma doping strategy for enhancing the electrochemical performance of vertically aligned carbon nanotube (VACNT) electrode for on-chip supercapacitor applications. By leveraging a hybrid plasma–planar triple spiral antenna (PTSA) system, we decouple plasma density and ion energy to selectively introduce nitrogen species — namely pyrrolic, pyridinic, and quaternary nitrogen — into the VACNT framework. A two-step process comprising Ar plasma defect enginee

Isolators, or optical diodes, are devices enabling unidirectional light propagation by using non-reciprocal optical materials, namely materials able to break Lorentz reciprocity. The realization of isolators at terahertz frequencies is a very important ope ...

The gate-controllable complex conductivity of graphene offers unprecedented opportunities for reconfigurable plasmonics at terahertz and mid-infrared frequencies. However, the requirement of a gating electrode close to graphene and the single 'control knob ...

This work presents a novel multi-marker sensor platform integrating a silicon nanowire (SiNW) junctionless field-effect transistor (JLFET)-based pH sensor and an amperometric lactate sensor on a single chip, fabricated using a CMOS-compatible top-down process. Real-time, multiplexed detection of lactate and pH is demonstrated using a multichannel electrochemical readout integrated circuit. The platform delivers reliable sensing in low-volume samples as small as 15 μl, offering current sensitivities of 51 μA

The experimental characterization of the surface impedance of monolayer graphene at micro and millimeter wave frequencies is addressed. Monolayer graphene is transferred on a substrate stack, which is placed in the cross-section of a rectangular waveguide. ...

Mihai Adrian Ionescu

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Small signal modeling of charge and piezoresistive modulations in active MEM resonators

Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining

Double gate movable body Micro-Electro-Mechanical FET as hysteretic switch: Application to data transmission systems

Double-gate field-effect-transistor based biosensor

Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor Including Quantum Confinement

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV

Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

Single Active Nanoelectromechanical Tuning Fork Front-End Radio-Frequency Receiver

Fragmented Membrane MEM Bulk Lateral Resonators with nano-gaps on 1.5 mu m SOI

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes

Centre frequency and bandwidth tunable bandpass filter based on RF MEMS (10-14GHz)

Nanomechanical Silicon Resonators with Intrinsic Tunable Gain and Sub-nW Power Consumption

Nitrogen doping of vertically aligned carbon nanotubes for on-chip CMOS-compatible pseudocapacitive supercapacitors

Near optimal graphene terahertz non-reciprocal isolator

Self-biased reconfigurable graphene stacks for terahertz plasmonics

CMOS-Compatible Biosensing Platform for Multiplexed Lactate and PH Monitoring in Low-Volume Biosamples

Non-contact characterization of graphene surface impedance at micro and millimeter waves