Mihai Adrian Ionescu

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In this paper, we experimentally explore the transient negative capacitance effect in ferroelectric high-k gate stacks using multi-ferroelectric domain Si-doped HfO2 with and without the metal plane, MFMIS (TiN/Si:HfO2/TiN/SiO2) and MFIS (TiN/Si:HfO2/SiO2) ...

In this work we propose and demonstrate the use of a Tunnel FET (TFET) as capacitorless DRAM cell based on TCAD simulations and experiments. We report more experimental results on Tunnel FETs implemented as a double-gate (DG) fully-depleted Silicon-On-Insu ...

A new Room Temperature (RT) 0-level vacuum package is demonstrated in this work, using amorphous silicon (aSi) as sacrificial layer and SiO2 as structural layer. The process is compatible with most of MEMS resonators and Resonant Suspended-Gate MOSFET [1] fabrication processes. This paper presents a study on the influence of releasing hole dimensions on the releasing time and hole clogging. It discusses mass production compatibility in terms of packaging stress during back-end plastic injection process. The

Many applications based on resonant nanoelectromechanical systems (NEMS) require monitoring their natural frequency of oscillation over time with high precision, e.g. for gas sensing or nanomechanical mass spectrometry. In this study, we integrate a very-high frequency, nanomechanical resonant-body field-effect transistor into a frequency-modulated phase-locked loop (FM-PLL) which operates analog, requires only one frequency source, and simultaneously exploits the low-noise displacement detection based on F

In this paper we report the first hybrid Phase-Change - Tunnel FET (PC-TFET) device configurations for achieving a deep sub-thermionic steep subthreshold swing at room temperature and subthreshold power savings. The proposed hybrid device feedbacks the ste ...

This paper presents new results on miniaturized organic thin film transistors (TFT) fabricated on a spin coated polyimide (PI) film. Patterning steps, that are vital for the integrity and electrical performances of the organic TFT, were performed using res ...

This work demonstrates a multifunctional platform that integrates energy storage and multi-bit memory capabilities using multilayer structures composed of antiferroelectric (AFE) Si:HfO2 layers with interleaved dielectric (DE) layers. We have fabricated multilayer AFE/dielectric capacitors with ultrathin 1 nm Al2O3 DE layers between the functional 10 nm AFE layers with up to 4 layers of Al2O3 and 4 layers of AFE, exploiting the internal built-in electric fields, with energy storage density up to 50 J/cm3, a

In this work we explore the fabrication and experimental characterization of multi-gate FD-SOI devices that can operate both as single electron transistors (SETs) and MOSFETs. FD-SOI SET operation is achieved with electrostatically induced tunneling barrie ...

This letter introduces a reconfigurable planar square-coil-shaped inductor exploiting as the tuning mechanism the insulator-to-metal transition (IMT) of a vanadium dioxide (VO2) switch placed in the interwinding space in an unprecedented manner. The VO2 th ...

This work reports on the physical definition and extraction of threshold voltage in Tunnel FETs based on numerical simulation data. It is shown that the Tunnel FET has the outstanding property of having two threshold voltages: one in terms of gate voltage, V-TG, and one in terms of drain voltage, V-TD. These threshold voltages can be physically defined based on the saturation of the barrier width narrowing with respect to V-G or V-D. The extractions of V-TG and V-TD are performed based on the transconductan

We report a simulation-based study of an all-silicon novel device which exploits internally combined quantum mechanical band-to-band and barrier tunneling mechanisms to overcome the intrinsic low current drive limitations of conventional silicon Tunnel FET ...

This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at least 0.2 eV band-gap shrinkage at the B ...

In this work we report the fabrication, co-integration and resulting performance of 2D/2D van der Waals (vdW) Vertical p-type Tunnel FETs and p-MOSFETs in a WSe2/SnSe2 material system. We demonstrate the best ever reported combined performance in terms of ...

In this paper we report the fabrication and detailed electrical characterization of a Metal-Ferroelectric-Oxide-Semiconductor Capacitor aiming at the extraction of the polarization characteristic. In order to evaluate the electrical performances of the ferroelectric over SiO2 capacitor, we propose a simple device test structure featuring an intermediate contact between the two insulators. The investigated test structures are fabricated on highly doped silicon with a gate stack including 40nm silicon dioxide

In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-met ...

Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most versatile technological solutions for building tunneling field effect transistors because of the sharp and potentially clean interfaces resulting from van der Waals assembly. Seve ...

We report the significant improvement obtained by a non-uniform gate capacitance made by appropriate combination of high-k and low-k regions over the tunneling and the channel regions of a heterostucture TFET (called HKLKFFET). In addition to significantly enhanced ION and subthreshold swing, we find that this structure offers great improvements for the dynamic switching energy (66% saving) and propagation delay (similar to 3 x fast operation) compared to a heterostructure TFET (HeTFET) due to the reduction

Carbon nanotubes (CNTs) have been considered one of the most promising material to make nanodevices, in particular nanoelectromechanical systems (NEMS), due to their remarkable mechanical (Young's modulus ∼ 1 TPa) and electrical (high conductivity for metallic nanotubes) properties, nevertheless their low mass. Several NEMS device categories based on carbon nanotubes have been reported in the literature: sensors [1], non-volatile memories [2], tunable oscillators [3] and nanoswitches [4], which offer high s

We propose a novel tunnel field-effect transistor (TFET) concept called the electron–hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron–hole bilayer in order to achieve improved switching and higher driv ...

The co-integration of logic switches and neuromorphic functions could be used to create new computing architectures with low power consumption and novel functionalities. Two-dimensional (2D) semiconductors and ferroelectric materials could be potentially u ...

Mihai Adrian Ionescu

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Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

1T Capacitor-less DRAM cell based on asymmetric Tunnel FET design

0-level Vacuum Packaging RT Process for MEMS Resonators

Sustained Nano-Mechanical Oscillation of a Resonant-Body Transistor by Frequency-Modulated Heterodyne Phase-Locked-Loop

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography

Antiferroelectric Multilayers Devices: a Platform for Energy and Information Storage

Multi-Gate FD-SOI Single Electron Transistor for hybrid SET-MOSFET quantum computing

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

Threshold voltage in Tunnel FETs: physical definition, extraction, scaling and impact on IC design

Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms

Asymmetrically strained all-silicon multi-gate n-Tunnel FETs

Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET

A study of polarization effects in metal-ferroelectric-oxide-semiconductor capacitors

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

RF NEM capacitive switch based on dense horizontal arrays of CNTs

The electron–hole bilayer tunnel FET

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices