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Mihai Adrian Ionescu

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Publications associées (403)

Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud

Mihai Adrian Ionescu

2017

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Mihai Adrian Ionescu, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Arnab Biswas, Cem Alper, Emanuele Andrea Casu, Teodor Rosca, Anna Krammer, Qun Zhao

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursu ...

Nature Research2017

Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation

Christian Enz, Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi, Francesco Bellando

This work experimentally demonstrates negative capacitance MOSFETs in hysteretic and non-hysteretic modes of operation. A PZT capacitor is externally connected to the gate of commercial nMOSFETs fabricated in 28nm CMOS technology to explore the negative ca ...

IEEE2017

Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Mariazel de la Candelas Maqueda López

2017

Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications

Mihai Adrian Ionescu, Andreas Schueler, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Mariazel de la Candelas Maqueda López, Michele Tamagnone, Nicolò Oliva, Anna Krammer

IEEE2017

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

Mihai Adrian Ionescu, Florin Udrea, Arnab Biswas, Cem Alper

This paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both I-V and G-V characteristics in all regimes of operation, n- and p-ambipolarity, the superlinear ons ...

Institute of Electrical and Electronics Engineers2017

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Christian Enz, Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi, Francesco Bellando

This letter reports for the first time a full experimental study of performance boosting of tunnel FETs (TFETs) and MOSFETs by negative capacitance (NC) effect. We discuss the importance of capacitance matching between a ferroelectric NC and a device capac ...

Institute of Electrical and Electronics Engineers2017

Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications

Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Johan Frédéric Longo, Hoël Maxime Guérin, Erick Antonio Garcia Cordero, Francesco Bellando

This paper reports a novel fully integrated low power multi-sensing smart system, which, by wafer-level 3D heterogeneous integration of Ion Sensitive Fully Depleted (FD) FETs and SU-8 micro/nanofludics, achieves the first of its kind wearable multi-sensing ...

2017

Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing

Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of Ion, gm, and overdrive are a ...

2017

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Igor Stolichnov, Mihai Adrian Ionescu, Andreas Schueler, Olivier Martin, Arnaud Magrez, Chen Yan, Emanuele Andrea Casu, Teodor Rosca, Nicolò Oliva, Anna Krammer

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of mate ...

Nature Research2017

Semiconductor tunneling device

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio, Cem Alper

The present invention concerns a semiconductor tunneling Field-Effect device including a source, a drain, at least one elongated semiconductor structure extending in an elongated direction, a first gate, and a second gate. The first gate has a length exten ...

2016

Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement

Juan Ramon Mosig, Anja Skrivervik, Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Hamed Hasani, Pietro Maoddi, Michele Tamagnone, Santiago Capdevila Cascante

In this paper, two THz reflectarray surfaces have been designed and fabricated in order to deflect a plane wave with any polarization and with a specific incident angle to three different specific directions each at distinct three frequencies of 0.7, 1.0 a ...

Ieee-Inst Electrical Electronics Engineers Inc2016

System for the remote monitoring of the hydration status of a living being

Mihai Adrian Ionescu, Hoël Maxime Guérin

System for monitoring the hydration status of a living being by exploiting the modulation of backscattered RF electromagnetic waves from a wearable patched placed on the skin, said system comprising: a RF-tag adapted to be directly or indirectly fixed to t ...

2016

Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron-hole bilayer tunnel field-effect transistor. We show that, analogous ...

Amer Inst Physics2016

Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters

Mihai Adrian Ionescu, Andreas Schueler, Montserrat Fernandez-Bolanos Badia, Antonio Paone, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Luca Petit

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2) as a future replacement solution for microelectromechanical capacitive switches. We prese ...

Elsevier Science Sa2016

The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

An extensive parameter analysis is performed on the electron-hole bilayer tunnel field-effect transistor (EHBTFET) using a 1-D effective mass Schrodinger-Poisson solver with corrections for band non-parabolicity considering thin InAs, In0.53Ga0.47As, Ge, S ...

Institute of Electrical and Electronics Engineers2016

Wearable, multi-parametric wireless system-in-patch for hydration level monitoring

Mihai Adrian Ionescu, Hoël Maxime Guérin

Wearable system based on an in-situ four-probe impedance measurement at different signal frequencies for the topical monitoring of at least one physiological parameter reflecting the hydration status such as skin conductivity, ion concentration in sweat or ...

2016

Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

Quantum mechanical confinement in electron-hole bilayer tunnel field-effect transistors (EHBTFETs) affects in a substantial way the band-to-band tunneling (BTBT) mechanism that constitutes their operating principle. Field-induced quantization is known to s ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Graphene Quantum Capacitors for High Frequency Tunable Analog Applications

Juan Ramon Mosig, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Pankaj Sharma, Michele Tamagnone

Graphene quantum capacitors (GQC) are demonstrated to be enablers of radio-frequency (RF) functions through voltage-tuning of their capacitance. We show that GQC complements MEMS and MOSFETs in terms of performance for high frequency analog applications an ...

American Chemical Society (ACS)2016

Ultra-Low Power Ion-Sensing Smart Platform for Noninvasive Healthcare Applications

Mihai Adrian Ionescu, Hoël Maxime Guérin, Erick Antonio Garcia Cordero, Amira Muhech Medrano, Francesco Bellando

The development of nanotechnologies, and the advent of micro/nano-sensors with novel functionalities integrated on flexible substrates, has opened the way to the development of wearable technology. Interest in wearable technology comes from the considerabl ...

2016

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