Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

Impact of physical parameters of ferroelectric layer on the performance of Negative Capacitance (NC) MOSFETs is experimentally studied in this paper. Electrical behaviors of PZT-based and Si:HfO2-based NC-FETs are investigated and discussed. In a PZT-based p-type NC-FET, a sub-thermal swing down to 20mV/dec is achieved due to the remarkable voltage gain of NC, reaching a maximum value of 10V/V. Nevertheless, the performance improvements with Si:HfO2 NC booster are significantly lower than PZT due to the coexistence of different phases and also high leakage current which can enormously reduce the enhancement by NC.