Publication

Threshold voltage in Tunnel FETs: physical definition, extraction, scaling and impact on IC design

Mihai Adrian Ionescu
2007
Conference Papers

Abstract

This work reports on the physical definition and extraction of threshold voltage in Tunnel FETs based on numerical simulation data. It is shown that the Tunnel FET has the outstanding property of having two threshold voltages: one in terms of gate voltage, V-TG, and one in terms of drain voltage, V-TD. These threshold voltages can be physically defined based on the saturation of the barrier width narrowing with respect to V-G or V-D. The extractions of V-TG and V-TD are performed based on the transconductance change method in the double gate Tunnel FET with a high-k dielectric, and a systematic comparison with the constant current method is reported. The effect of gate length scaling on these threshold voltages, current, conductance characteristics, g(m)/I-D and g(m)/g(ds) of the Tunnel FET is investigated for the first time.

Official source

https://infoscience.epfl.ch/entities/publication/29026da0-e8a3-4128-b98a-55258fc31804

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Mihai Adrian Ionescu
2007
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/29026da0-e8a3-4128-b98a-55258fc31804

About this result

Related concepts (32)

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Threshold voltage

The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead.

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

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Threshold voltage in Tunnel FETs: physical definition, extraction, scaling and impact on IC design

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