Publication

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

Mihai Adrian Ionescu, Didier Bouvet
2013
Journal Articles

Abstract

We report the significant improvement obtained by a non-uniform gate capacitance made by appropriate combination of high-k and low-k regions over the tunneling and the channel regions of a heterostucture TFET (called HKLKFFET). In addition to significantly enhanced ION and subthreshold swing, we find that this structure offers great improvements for the dynamic switching energy (66% saving) and propagation delay (similar to 3 x fast operation) compared to a heterostructure TFET (HeTFET) due to the reduction of the Miller effect. We compare and benchmark the proposed device against a 65 nm low stand-by power (LSTP) CMOS technology, and we show that at a supply voltage of V-DD = 0.4 V, TFETs can have smaller propagation delays compared to CMOS operating in the subthreshold region. Higher cut-off frequency (similar to 3x) and bandwidth for analog applications is observed in circuit-level simulations. (C) 2013 Elsevier Ltd. All rights reserved.

Official source

https://infoscience.epfl.ch/entities/publication/4f7de6a9-a248-4b79-b00d-e717f963f7a6

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Mihai Adrian Ionescu, Didier Bouvet
2013
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/4f7de6a9-a248-4b79-b00d-e717f963f7a6

About this result

Related concepts (32)

CMOS

Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.

Subthreshold conduction

Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. The amount of subthreshold conduction in a transistor is set by its threshold voltage, which is the minimum gate voltage required to switch the device between on and off states.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Related publications (23)

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

Chat with Graph Search

E-mode digitally recessed p-NiO tri-junction HEMT with V BR of 2.5 kV

Doping-Modulated Semiconductor-to-Metal Transformation in a Low-Band-Gap Two-Dimensional Material

Metal-insulator-metal tunnelling diode for operation in the visible or infrared spectrum