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Mihai Adrian Ionescu

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Publications associées (403)

Impaired Freeze Response In Psychogenic (Functional) Movement Disorder Patients During Exposure To Stress

Kamiar Aminian, Mihai Adrian Ionescu, Giuseppe Angelo Zito

ELSEVIER SCI LTD2018

Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

Mihai Adrian Ionescu, Virginie Anne Chenaux, Anisoara Ionescu

In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large and unique design space. Tra ...

IEEE2018

A Review and Mathematical Treatment of Infinity on the Smith Chart, 3D Smith Chart and Hyperbolic Smith Chart

Mihai Adrian Ionescu, Andrei Müller

This work describes the geometry behind the Smith chart, recent 3D Smith chart tool and previously reported conceptual Hyperbolic Smith chart. We present the geometrical properties of the transformations used in creating them by means of inversive geometry ...

MDPI2018

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Johan Frédéric Longo, Hoël Maxime Guérin, Erick Antonio Garcia Cordero, Junrui Zhang, Francesco Bellando

Wearable systems could offer noninvasive and real-time solutions for monitoring of biomarkers in human sweat as an alternative to blood testing. Recent studies have demonstrated that the concentration of certain biomarkers in sweat can be directly correlat ...

2018

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Alessandro Fumarola, Matteo Cavalieri, Andrei Müller

This letter introduces a reconfigurable planar square-coil-shaped inductor exploiting as the tuning mechanism the insulator-to-metal transition (IMT) of a vanadium dioxide (VO2) switch placed in the interwinding space in an unprecedented manner. The VO2 th ...

2018

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

Christian Enz, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

Impact of physical parameters of ferroelectric layer on the performance of Negative Capacitance (NC) MOSFETs is experimentally studied in this paper. Electrical behaviors of PZT-based and Si:HfO2-based NC-FETs are investigated and discussed. In a PZT-based ...

2018

Capillary flow device for bio-fluid collection with semiconductor sensors

Mihai Adrian Ionescu, Hoël Maxime Guérin, Erick Antonio Garcia Cordero, Francesco Bellando

An on-body wearable bio-fluid collection and sensing device including an interface or interface surface comprising at least one biocompatible material for contacting a bodily part; at least one inlet for receiving the bio-fluid, at least one outlet for eva ...

2018

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

Igor Stolichnov, Mihai Adrian Ionescu, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Nicolò Oliva

We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous field effect devices (FETs) by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 bottom layer. Pre-patterned electrodes offer the ad ...

2018

Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

Mihai Adrian Ionescu, José Luis Padilla de la Torre

Among the different types of bilayer tunneling field-effect transistors exploiting interband tunneling phenomena with tunneling directions aligned with gate-induced electric fields, the utilization of InAs/GaSb channels proves to be an appealing means to e ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

Mihai Adrian Ionescu, Emanuele Andrea Casu, Nicolò Oliva, Matteo Cavalieri

We propose and experimentally demonstrate double-gated n-type WSe 2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magn ...

IEEE2018

Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling

Mihai Adrian Ionescu, Arnab Biswas, Saurabh Tomar

A tunnel field effect transistor (TFET), including a source region, a gate region, a channel region, and a drain region, the gate region including a gate stack, wherein an area of the source region that is facing the channel region is overlapped by the gat ...

2018

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Hiroshi Iwai

We report the universal boosting impact of a true negative capacitance (NC) effect on digital and analog performances of Tunnel FETs (TFETs), mirrored for the first time in near hysteresis-free experiments and exploiting the S-shaped polarization character ...

IEEE2018

An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10K

Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi

In this work, we experimentally report the figures of merit of state-of-the-art heterostructure Tunnel Field-Effect-Transistor (TFET) arrays from room (300K) down to cryogenic temperature (10K) at supply voltages below 400mV. We demonstrate here, for the f ...

IEEE2018

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

Igor Stolichnov, Mihai Adrian Ionescu

Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy ...

IEEE2018

Embedded Passive Nano-Liter Micropump For Sweat Collection And Analysis

Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Montserrat Fernandez-Bolanos Badia, Johan Frédéric Longo, Hoël Maxime Guérin, Erick Antonio Garcia Cordero, Francesco Bellando

This paper presents a method to integrate biocompatible passive microfluidic systems within a sensing platform to allow continuous analysis of sweat in a wearable microsystem. The technology is promising for miniaturization of systems to enable access to b ...

IEEE2018

All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing

Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Johan Frédéric Longo, Hoël Maxime Guérin, Maneesha Rupakula, Erick Antonio Garcia Cordero, Junrui Zhang, Francesco Bellando, Guillaume Charles Henri Herment

This paper reports for the first time, smart 3D-Extended-Metal-Gate Ion-Sensitive-Field-Effect-Transistors (3D-EMG-ISFETs), with unique figures of merit: (i) extremely-low-power (down to a record value of 2 pW per sensor under excellent linearity), (ii) al ...

IEEE2018

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive a ...

IEEE2018

Modulated scattering technique in the terahertz domain enabled by current actuated vanadium dioxide switches

Juan Ramon Mosig, Anja Skrivervik, Mihai Adrian Ionescu, Wolfgang Amadeus Vitale, Michele Tamagnone, Santiago Capdevila Cascante

The modulated scattering technique is based on the use of reconfigurable electromagnetic scatterers, structures able to scatter and modulate an impinging electromagnetic field in function of a control signal. The modulated scattering technique is used in a ...

Nature Research2017

Elevated transition temperature in Ge doped VO2 thin films

Mihai Adrian Ionescu, Andreas Schueler, Arnaud Magrez, Wolfgang Amadeus Vitale, Anna Krammer, Piotr Mocny

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measuremen ...

2017

Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Mariazel de la Candelas Maqueda López

IEEE2017

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