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Mihai Adrian Ionescu

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Related publications (403)

Detection of ultra-low protein concentrations with the simplest possible field effect transistor

Mihai Adrian Ionescu, Elizabeth Buitrago Godinez

Silicon nanowire (Si NW) sensors have attracted great attention due to their ability to provide fast, low-cost, label-free, real-time detection of chemical and biological species. Usually configured as field effect transistors (FETs), they have already dem ...

IOP PUBLISHING LTD2019

Sensing device for sensing minor charge variations

Mihai Adrian Ionescu, Cem Alper, Teodor Rosca

A charge sensing device for sensing charge variations in a charge storage area includes: a TFET having at least one sense gate; and a capacitive coupling for coupling the charge storage area with the sense gate. ...

2019

Double-gate field-effect-transistor based biosensor

Mihai Adrian Ionescu, Hoël Maxime Guérin

The present invention concerns a biosensor (1) comprising: a source element (13); a drain element (17); a semiconductor channel element between the source element (13) and the drain element (17) for forming an electrically conductive channel with adjustabl ...

2019

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Mihai Adrian Ionescu, Andreas Schueler, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Junrui Zhang, Anna Krammer, Matteo Cavalieri, Andrei Müller

Recently, the field of Metal-Insulator-Transition (MIT) materials has emerged as an unconventional solution for novel energy efficient electronic functions, such as steep slope subthermionic switches, neuromorphic hardware, reconfigurable radiofrequency fu ...

Nature Research2019

Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid

Mihai Adrian Ionescu, Erick Antonio Garcia Cordero, Junrui Zhang, Francesco Bellando

The present disclosure concerns a Field-Effect Transistor device or sensor comprising at least one drain region, at least one source region, at least a channel region, at least a first gate connected to the channel region, at least one stack comprising at ...

2019

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Hiroshi Iwai

We report the universal boosting impact of a true negative capacitance (NC) effect on digital and analog performances of Tunnel FETs (TFETs), mirrored for the first time in near hysteresis-free experiments and exploiting the S-shaped polarization character ...

2019

Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric

Mihai Adrian Ionescu, Emanuele Andrea Casu, Nicolò Oliva, Matteo Cavalieri

2019

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a ...

2018

The Future of Electronics: Silicon to Cloud Technologies

Mihai Adrian Ionescu

We will present and discuss some of the great research challenges and opportunities related to 21st century energy efficient computing and sensing devices and systems, in the context of the Internet of Things (IoT) revolution. In the future, major innovati ...

IEEE2018

CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity

Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Johan Frédéric Longo, Hoël Maxime Guérin, Maneesha Rupakula, Erick Antonio Garcia Cordero, Junrui Zhang, Francesco Bellando, Neil Ebejer

IEEE2018

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Enrico Colla, Igor Stolichnov, Mihai Adrian Ionescu, Matteo Cavalieri

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

2018

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Mihai Adrian Ionescu, Andreas Schueler, Olivier Martin, Arnaud Magrez, Chen Yan, Emanuele Andrea Casu, Nicolò Oliva, Anna Krammer

In this work we report a new class of ultra-thin film devices based on n-n van der Waals (vdW) heteroj unctions of MoS2 and VO2, which show remarkable tunable characteristics. The favorable band alignment combined with the sharp and clean vdW interface det ...

2018

Tunable RF phase shifters based on Vanadium Dioxide metal insulator transition

Mihai Adrian Ionescu, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Nicolò Oliva, Anna Krammer, Alessandro Fumarola, Matteo Cavalieri, Andrei Müller

2018

Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW

Mihai Adrian Ionescu, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Anna Krammer, Alessandro Fumarola, Andrei Müller

2018

A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

2018

Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

2018

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Mihai Adrian Ionescu

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Detection of ultra-low protein concentrations with the simplest possible field effect transistor

Sensing device for sensing minor charge variations

Double-gate field-effect-transistor based biosensor

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV

Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

The Future of Electronics: Silicon to Cloud Technologies

CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Tunable RF phase shifters based on Vanadium Dioxide metal insulator transition

Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW

A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET

Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities

Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor

III-V heterostructure tunnel field-effect transistor

Magnetoplasmonic enhancement of Faraday rotation in patterned graphene metasurfaces

Two-Dimensional Materials Negative capacitance gives a positive boost