Mihai Adrian Ionescu

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We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2) as a future replacement solution for microelectromechanical capacitive switches. We prese ...

This paper reports on an inductor fabrication method capable to deliver high quality factor (Q) and high self-resonance frequency (SRF) devices using quartz insulating substrates and thick high-conductivity copper lines. Inductors are key devices in RF circuits that, when fabricated on traditional semiconductor substrates, suffer from poor RF performances due to thin metallization and substrate related losses. Many previous works revealed that RF performances are strongly dependent on the limited metallizat

We present scalable III-V heterojunction tunnel FETs fabricated using a Si CMOS-compatible FinFET process flow and integrated on Si (100) substrates. The tunneling junction is fabricated through self-aligned selective p(+) GaAsSb raised source epitaxial re ...

In this paper we analyze and discuss the characteristics and expected benefits of some emerging device categories for ultra low power integrated circuits. First, we focus on two categories of sub-thermal subthreshold swing switches Tunnel FETs and Negative ...

An improved method for self-assembly fabrication of single-walled carbon nanotube (SWCNT) field effect transistors (FETs) is presented, combining the unique design of biased/floating potential electrode geometry and the technique of aligning CNTs by pre-de ...

We have examined the properties of nicotinic acetylcholine receptors in embryonic chick retinal ganglion cells. Ganglion cells, identified according to morphological and physiological criteria, displayed spontaneous or induced action potentials. In 94/99 cells acetylcholine pulses evoked responses. In current clamp mode, acetylcholine provoked membrane depolarization and triggered action potentials. Under voltage clamp conditions, acetylcholine evoked inward currents that were readily blocked by d-tubocurar

The development of nanotechnologies, and the advent of micro/nano-sensors with novel functionalities integrated on flexible substrates, has opened the way to the development of wearable technology. Interest in wearable technology comes from the considerabl ...

This paper presents a novel high-frequency tunable band-stop filter concept based on a single MEMS capacitive shunt device which uses meander arm anchoring inductors and with a total size of 300 × 600 μm. Tuning ranges of the central frequency in the order ...

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power i ...

A silicon-integrated one-dimensional CRLH-TL metamaterial unit cell is presented. Ultra broadband behavior is achieved by implementing the previously proposed 'lattice network' CRLH-TL unit cell in a monolayer host transmission line, as required for simple ...

In this letter, we propose a lateral asymmetric strain profile in a silicon nanowire or ultrathin silicon film as a key technology booster for the performance of all-silicon Tunnel FETs. We demonstrate by simulation that a Gaussian tensile-strain profile with a maximum placed at the source side of a nanowire Tunnel FET with a 50-nm channel length provides an optimized solution for a low-standby-power switch. This leads to the following: 1) ultralow I-off (more than three decades lower than in the case of a

Along with recent advancements in thin-film technologies, the engineering of complex transition metal oxide heterostructures offers the possibility of creating novel and tunable multifunctionalities. A representative complex oxide is the perovskite stronti ...

This work presents the technological development and characterization of n-channel fully depleted high-k dielectric FinFETs (Fin Field Effect Transistor) for applications in a liquid environment. Herein, we provide a systematic approach based on Finite Ele ...

This paper reports on the modeling and key design aspects of an innovative MEMS device: the suspended-gate MOSFET (SG-MOSFET). Based on the coupled-electromechanical equations describing the suspended gate actuation, we present the investigation of the pull-in voltages and of the capacitance switching and tuning ranges for RF applications. A quasi-analytical model and is developed for the gate-to-substrate capacitance of the SG-MOSFET and then, validated by numerical simulation. A SPICE macro-model using po

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and e ...

In this paper we demonstrate ultra-high sensitivity silicon nanowires pH and protein sensing on the same Silicon nanowire array platform by using a constant current method and monitoring the drain voltage as function of analyte concentration. The injected ...

Risk management (RM) is a key component of the development of modern medical devices (MD) to achieve acceptable functional safety and pass the regulatory process. The emerging availability of various techniques, languages, and tools that use model-based sy ...

We report on the temperature dependence of ferroelectric metal-oxide-semiconductor (MOS) transistors and explain the observed improved characteristics based on the dielectric response of ferroelectric materials close to the Curie temperature. The hysteretic current-voltage static characteristics of a fully depleted silicon-on-insulator transistor, with 40 nm vinylidene fluoride trifluorethylene, and 10 nm SiO2 gate stack, are measured from 300 to 400 K. In contrast with conventional MOS field effect transis

Wearable system based on an in-situ four-probe impedance measurement at different signal frequencies for the topical monitoring of at least one physiological parameter reflecting the hydration status such as skin conductivity, ion concentration in sweat or ...

The fabrication, design, and characterization of high-quality factor microelectromechartical (MEM) resonators fabricated on thin-film silicon-on-insulators (SOIs) are addressed in this paper. In particular, we investigate laterally vibrating bulk-mode resonators based on connected parallel beams [parallel beam resonators (PBRs)]. The experimental characteristics of PBRs are compared to disk resonators and rectangular plate resonators. All the reported MEM resonators are fabricated on 1.25-mu m SOI substrate

Mihai Adrian Ionescu

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Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters

High quality factor copper inductors integrated in deep dry-etched quartz substrates

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

Ultra low power: Emerging devices and their benefits for integrated circuits

Floating-potential self-assembly of singe-walled carbon nanotube field effect transistors by ac-dielectrophoresis

Ganglion cells from chick retina display multiple functional nAChR subtypes

Ultra-Low Power Ion-Sensing Smart Platform for Noninvasive Healthcare Applications

Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

A Microfabricated 1-D Metamaterial Unit Cell Matched From DC to Millimeter-Waves

Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs

Defect-induced magnetism in homoepitaxial SrTiO3

Technological development of high-k dielectric FinFETs for liquid environment

The suspended-gate MOSFET (SG-MOSFET): A modeling outlook for the design of RF MEMS switches and tunable capacitors

SWNT array resonant gate MOS transistor

Ultra-High Sensitivity Silicon Nanowire Array Biosensor Based on a Constant-Current Method for Continuous Real-Time pH and Protein Monitoring in Interstitial Fluid

Model-Based ISO 14971 Risk Management of EEG-Based Medical Devices

Ferroelectric transistors with improved characteristics at high temperature

Wearable, multi-parametric wireless system-in-patch for hydration level monitoring

Bulk Lateral MEM Resonator on Thin SOI With High Q-Factor