Publication

0-level Vacuum Packaging RT Process for MEMS Resonators

Mihai Adrian Ionescu, Cyrille Hibert
2008
Conference Papers

Abstract

A new Room Temperature (RT) 0-level vacuum package is demonstrated in this work, using amorphous silicon (aSi) as sacrificial layer and SiO2 as structural layer. The process is compatible with most of MEMS resonators and Resonant Suspended-Gate MOSFET [1] fabrication processes. This paper presents a study on the influence of releasing hole dimensions on the releasing time and hole clogging. It discusses mass production compatibility in terms of packaging stress during back-end plastic injection process. The packaging is done at room temperature making it fully compatible with IC-processed wafers and avoiding any subsequent degradation of the active devices.

Official source

https://infoscience.epfl.ch/entities/publication/d311218a-8841-4dcc-8d6c-d13f2cdcb305

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Mihai Adrian Ionescu, Cyrille Hibert
2008
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/d311218a-8841-4dcc-8d6c-d13f2cdcb305

About this result

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0-level Vacuum Packaging RT Process for MEMS Resonators

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