Publications de Philippe Flückiger

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This paper reports on a novel, simple yet reliable, unbalanced SOI Mach-Zehnder (M-Z) interferometer architecture based on 1.2 μm CMOS process and adapted post-processing for the waveguide sidewalls. The fabricated electro-optical device is based on multip ...

This paper reports on the modeling and key design aspects of an innovative MEMS device: the suspended-gate MOSFET (SG-MOSFET). Based on the coupled-electromechanical equations describing the suspended gate actuation, we present the investigation of the pull-in voltages and of the capacitance switching and tuning ranges for RF applications. A quasi-analytical model and is developed for the gate-to-substrate capacitance of the SG-MOSFET and then, validated by numerical simulation. A SPICE macro-model using po

This paper reports the fabrication and electrical characterization of high tuning range AlSi RF MEMS capacitors. We present experimental results obtained by a surface micromachining process that uses dry etching of sacrificial amorphous silicon to release ...

A novel MEMS device architecture: the SOI SG-MOSFET, which combines a solid- state MOS transistor and a suspended metal membrane in a unique metal-over- gate architecture, is proposed. A unified physical analytical model (weak, moderate and strong inversions) is developed and used to investigate main electrostatic characteristics in order to provide first-order design criteria for low-voltage operation and high-performance. It is demonstrated that the use of a thin gate oxide (

A novel MEMS technological platform for RF passive components, namely RF MEMS switches, tuneable capacitors and high-Q suspended inductors, is reported. The proposed process employs a metal (Al, AlSi or Cu) as active movable layer and amorphous silicon or polycrystalline silicon as sacrificial layers, providing multi-air-gaps. Various types of substrates like bulk silicon and SOI can be used. Full-dry releasing of suspended beams and membranes is performed with SF_6 or XeF_2, with unrivalled yield/reproduci

We present a fully integrated Mach-Zehnder interferometer in silicon-on- insulator technology. Modulation of the index of refraction is achieved through the plasma dispersion effect resulting in a bandwidth in the 10 MHz range. A particular and innovative design makes this device completely compatible with CMOS technology allowing electronic functions to be integrated on the same substrate. Measurement results, limitations due to thermooptic effect and absorption related to charge injection together with fu

A novel Silicon Sacrificial Layer Dry Etching (SSLDE) technique using sputtered amorphous or LPCVD polycrystalline silicon as sacrificial layers and a dry fluorine-based (SF₆) plasma chemistry as releasing process is reported with a detailed experimental study of the release etching step. The process is capable of various applications in surface micromachining process, and can be applied in fabricating RF MEMS switches, tunable capacitors, high-Q suspended inductors and suspended-gate MOSFETs. The developed

A method for the fabrication of bow-tie optical antennas at the apex of pyramidal Si3N4 atomic force microscopy tips is described. We demonstrate that these novel optical probes are capable of sub-wavelength imaging of single quantum dots at room temperatu ...

This paper presents a novel technological and design study of optical guided- wave MicroElectroMechanical Systems (MEMS) switch. We work on a concept of hermetic assembly in which a MEMS wafer is covered (top-down) by a crossing optical waveguide wafer. Th ...

In this paper, the necessity for a high pressure valve is discussed, and a design for such a valve that has been previously presented is described. This valve can be built using simple fabrication techniques available in microsystem foundries. Its fabrication process is also shown. Finally, a brief description of the expected behaviour of the valve is presented.

NOVELTY - A micro-electro-mechanical-system (MEMS) is manufactured by the use of a sacrificial layer that is made of silicon. USE - The invention is used in surface micromachining for the manufacture of a MEMS containing a suspended metal layer or MEMS device architecture. MEMS device is a suspended gate metal oxide semiconductor field effect transistor (SG-MOSFET). It is used as radio-frequency capacitive switch, current switch, radio-frequency tuneable capacitor, magnetic field sensor, accelerometer, and

The flexibility of the new available Inductively Coupled Plasma (ICP) reactors provides a lot of possibilities for process development in dry etching field. Deep anisotropic etching of silicon is now possible under control (etch rate, profiles, uniformity) that offers a lot of possibilities for microsystems development. The purpose of this presentation is to give an overview of bulk silicon processing techniques using new ICP etching equipment in the field of microsystems development.

We report a recent breakthrough to control profile angle for SiO2 Deep Anisotropic Dry Etching (SDADE). Our study reveals that gas residence time is the key parameter to control profile angle. Moreover, we show that it is possible to control profile angle, ...

The design, fabrication and characterization of CMOS-compatible optoelectronic devices is discussed. All devices are fabricated on silicon on insulator (SOI) substrates which makes them suitable for three-dimensional (3-D) telecommunication photonic integr ...

Philippe Flückiger

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A novel CMOS SOI unbalanced Mach-Zehnder interferometer: from design and simulations to fabrication and characterization

The suspended-gate MOSFET (SG-MOSFET): A modeling outlook for the design of RF MEMS switches and tunable capacitors

High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining

Modeling and design of a low-voltage SOI suspended-gate MOSFET (SG- MOSFET) with a metal-over-gate architecture

A novel RF MEMS technological platform

CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology

Silicon sacrificial layer dry etching (SSLDE) for free-standing RF MEMS architectures

Bow-tie optical antenna probes for single-emitter scanning near-field optical microscopy

Fabrication of vertical digital silicon optical micromirrors on suspended electrode for guided-wave optical switching applications

Fabrication process for a microfluidic valve

Manufacture of micro-electro-mechanical-system using sacrificial layer made of silicon, useful for micro-electro-mechanical-system device architecture, e.g. radio-frequency capacitive switch and current switch

DEEP ANISOTROPIC ETCHING OF SILICON USING LOW PRESSURE HIGH DENSITY PLASMA. PRESENTATION OF COMPLEMENTARY TECHNIQUES AND THEIR APPLICATIONS IN MICROTECHNOLOGY.

Profile angle control in SIO2 deep anisotropic dry etching for MEMS fabrication

Fabrication process and model for a MEMS parallel-plate capacitor above CPW line

RF MEMS switches for mobile communications : from metal-metal to suspended-gate MOS device architectures

3-D integrable optoelectronic devices for telecommunications ICs

Dry Etching Techniques of Amorphous Silicon for Suspended Metal Membrane RF MEMS Capacitors

High Tunning Range AISi RF MEMS Capacitors Fabricated with Sacrificial Amorphous Silicon Surface Micromachining