Publication

A novel RF MEMS technological platform

Mihai Adrian Ionescu, Philippe Renaud, Michel Declercq, Cyrille Hibert, Philippe Flückiger, Raphaël Fritschi
2002
Conference Papers

Résumé

A novel MEMS technological platform for RF passive components, namely RF MEMS switches, tuneable capacitors and high-Q suspended inductors, is reported. The proposed process employs a metal (Al, AlSi or Cu) as active movable layer and amorphous silicon or polycrystalline silicon as sacrificial layers, providing multi-air-gaps. Various types of substrates like bulk silicon and SOI can be used. Full-dry releasing of suspended beams and membranes is performed with SF_6 or XeF_2, with unrivalled yield/reproducibility compared with any other wet etching techniques. The platform is used to validate new MEMS architectures and concepts, such as the suspended-gate MOSFET that can serve as both RF capacitive switches and tuneable RF capacitors.

Source officielle

https://infoscience.epfl.ch/entities/publication/61346a41-6de6-4c44-b7d7-919501b2354c

À propos de ce résultat

Cette page est générée automatiquement et peut contenir des informations qui ne sont pas correctes, complètes, à jour ou pertinentes par rapport à votre recherche. Il en va de même pour toutes les autres pages de ce site. Veillez à vérifier les informations auprès des sources officielles de l'EPFL.

Graph Chat

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Mihai Adrian Ionescu, Philippe Renaud, Michel Declercq, Cyrille Hibert, Philippe Flückiger, Raphaël Fritschi
2002
Conference Papers

Résumé

Source officielle

https://infoscience.epfl.ch/entities/publication/61346a41-6de6-4c44-b7d7-919501b2354c

À propos de ce résultat

Concepts associés (32)

Crystalline silicon

Crystalline silicon or (c-Si) Is the crystalline forms of silicon, either polycrystalline silicon (poly-Si, consisting of small crystals), or monocrystalline silicon (mono-Si, a continuous crystal). Crystalline silicon is the dominant semiconducting material used in photovoltaic technology for the production of solar cells. These cells are assembled into solar panels as part of a photovoltaic system to generate solar power from sunlight. In electronics, crystalline silicon is typically the monocrystalline form of silicon, and is used for producing microchips.

Monocrystalline silicon

Monocrystalline silicon, more often called single-crystal silicon, in short mono c-Si or mono-Si, is the base material for silicon-based discrete components and integrated circuits used in virtually all modern electronic equipment. Mono-Si also serves as a photovoltaic, light-absorbing material in the manufacture of solar cells. It consists of silicon in which the crystal lattice of the entire solid is continuous, unbroken to its edges, and free of any grain boundaries (i.e. a single crystal).

Variable capacitor

A variable capacitor is a capacitor whose capacitance may be intentionally and repeatedly changed mechanically or electronically. Variable capacitors are often used in L/C circuits to set the resonance frequency, e.g. to tune a radio (therefore it is sometimes called a tuning capacitor or tuning condenser), or as a variable reactance, e.g. for impedance matching in antenna tuners. In mechanically controlled variable capacitors, the distance between the plates, or the amount of plate surface area which overlaps, can be changed.

Afficher plus

Publications associées (5)

Afficher plus

A novel RF MEMS technological platform

Chattez avec Graph Search

3.3V Sub-nA Voltage Gap Readout Circuit for Memristive Biosensing in Silicon Nanowire

Low voltage electrostatic 90° turning flap for reflective MEMS display

Mechanical Hydrogen Sensing