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Jean-François Carlin

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Publications associées (189)

Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors

Jean-François Carlin, Gatien Cosendey, Nicolas Grandjean, Raphaël Butté, Nils Asmus Kristian Kaufmann

We report on the growth conditions of AlInN layers grown on free-standing GaN substrates. We found that an average indium content of similar to 20% is needed to obtain defect-free AlInN/GaN multilayers. This is larger than the commonly accepted value of 18 ...

AIP American Institute of Physics2011

Fully Passivated AlInN/GaN HEMTs With f(T)/f(MAX) of 205/220 GHz

Jean-François Carlin, Nicolas Grandjean

We report the fabrication and characterization of 30-nm-gate fully passivated AlInN/GaN high-electron mobility transistors (HEMTs) with cutoff frequencies f(T) and f(MAX) simultaneously exceeding 200 GHz at a given bias point. The current gain cutoff frequ ...

Institute of Electrical and Electronics Engineers2011

Standard-free composition measurements of AlxIn1-xN by low-loss electron energy loss spectroscopy

Jean-François Carlin, Nicolas Grandjean

We demonstrate a standard-free method to retrieve compositional information in AlxIn1-xN thin films by measuring the bulk plasmon energy (E-p), employing electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM). Two se ...

2011

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Eric Feltin, Dobri Simeonov, Pierre Michel Corfdir

We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising ...

V C H Publishers, Suite 909, 220 E 23Rd St, New York, Ny 10010 Usa2011

Optical bistability in InGaN-based multisection laser diodes

Jean-François Carlin, Julien Dorsaz, Dmitri Boiko, Nicolas Grandjean, Luca Alex Milo Sulmoni

Optical bistability is observed in cw-operating InGaN-based laser diodes including a saturable absorber (SA) section. The dependence of the light-current hysteresis on the SA section length and reverse bias (VSA) has been studied. An analytical approach is ...

AIP American Institute of Physics2011

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

It is observed experimentally that high electron mobility transistor devices with short channel length processed from nitride AlInN/AlN/GaN heterostructures containing 2D electron gases (2DEGs) with densities beyond 2 x 10(13) cm(-2) exhibit temperatures u ...

American Institute of Physics2011

Recombination coefficients of GaN-based laser diodes

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Luca Alex Milo Sulmoni

We measure the charge carrier recombination coefficients of InGaN quantum wells by analyzing the dynamical properties of (Al,In)GaN laser diodes emitting in the violet spectral range. Relaxation oscillations and turn-on delays are fitted to a rate equation ...

2011

Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1-x N/GaN heterostructures: A possible explanation of defect insensitivity

Jean-François Carlin, Pierre Stadelmann, Jean-Luc Rouvière, Marco Cantoni, Nicolas Grandjean, Eric Feltin, Anas Mouti

Evidence of composition fluctuations around threading dislocations at scales ranging from atomic distances to tens of nanometers is provided by z-contrast imaging, strain measurement, and energy dispersive x-ray spectroscopy in AlxIn1-x N/GaN heterostructu ...

2011

Diamond overgrown InAlN/GaN HEMT

Jean-François Carlin, Nicolas Grandjean

In this work the technology and characterization of nanocrystalline diamond (NCD) films directly grown on InAlN/GaN HEMTs is presented. Optimization of GaN based HEMT process steps including metallization stacks is discussed. A fully processed InAlN/GaN HE ...

2011

High-speed and low-noise AlInN/GaN HEMTs on SiC

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

A comparison of devices with different source-drain gaps has been performed on AlInN/GaN high electron mobility transistors (HEMTs) grown on SiC. The cut-off frequency is effectively improved through shrinking source drain space and reducing gate parasitic ...

Wiley2011

Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Luca Alex Milo Sulmoni

We study the influence of pump current and absorber bias voltage on the pulse width and frequency of sustained pulsation in GaN-based multisection laser diodes. The observed frequencies and pulse widths range from 1.5 to 4.5GHz and 90 to 18 ps, respectivel ...

2011

Role of stable and metastable Mg-H complexes in p-type GaN for cw blue laser diodes

Jean-François Carlin, Nicolas Grandjean, Antonino Francesco Castiglia

Secondary ion mass spectroscopy (SIMS) and capacitance-voltage measurements were combined to thoroughly study Mg doping in GaN layers grown by metal organic vapor phase epitaxy. First we found that the Mg steady-state incorporation regime occurs for a surf ...

AIP American Institute of Physics2011

Low-Noise Microwave Performance of 0.1 mu m Gate AlInN/GaN HEMTs on SiC

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We report the first microwave noise characterization of AlInN/GaN HEMTs. Transistors with a 0.1 mu m gate implemented on a semi-insulating SiC substrate achieve a maximum current density of 1.92 A/mm at V-GS = 0 V, a measured transconductance g(M) = 480 mS ...

2010

High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia

We report on the characteristics of blue superluminescent light emitting diodes based on the emission of InGaN quantum wells. Narrow ridge-waveguide devices realized by standard processing techniques and with extremely low facet reflectivity show single la ...

2010

Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

Jean-François Carlin, Nicolas Grandjean, Marcus Gonschorek

We report on an annealing-induced "gate sinking" effect in a 2-nm-thin In0.17Al0.83N/AlN barrier high electron mobility transistor with Ir gate. Investigations by transmission electron microscopy linked the effect to an oxygen containing interlayer between ...

2010

Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Cambridge, Cambridge University Press2010

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F-T=143 GHz

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We report on ultrahigh-speed 80 nm AlInN/GaN high-electron-mobility transistors (HEMTs) grown on (111) high-resistivity silicon substrates. The devices feature a peak measured transconductance g(M) = 415 mS/mm, a maximum current of 1.43 A/mm with a ratio I ...

2010

Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Design considerations and performance of n(++) GaN/InAlN/AlN/GaN normally off high-electron mobility transistors (HEMTs) are analyzed. Selective and damage-free dry etching of the gate recess through the GaN cap down to a 1-nm-thick InAlN barrier secures p ...

2010

Spin relaxation of free excitons in narrow GaN/AlxGa1-xN quantum wells

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin

By performing pump-probe experiments, we study the relaxation dynamics of spin-polarized excitons in a wurtzite GaN/AlGaN quantum well (QW)grown by metal organic vapor phase epitaxy. The circular degree of polarization of the differential reflectivity sign ...

2010

RF Performance of InAlN/GaN HFETs and MOSHFETs With f(T) X L-G up to 21 GHz . mu m

Jean-François Carlin, Nicolas Grandjean

The RF performance of lattice-matched InAlN/GaN heterostructure field-effect transistors (HFETs) and Al2O3/InAlN/GaN metal-oxide-semiconductor HFETs (MOSHFETs) with varied gate length was evaluated. The current gain cutoff frequency f(T) and the maximum os ...

Institute of Electrical and Electronics Engineers2010

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