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Jean-François Carlin

Cette personne a quitté l’EPFL

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Publications associées (180)

Page 5 sur 9

Lattice-matched GaN-InAlN waveguides at lambda=1.55 mu m grown by metal-organic vapor phase epitaxy

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Sylvain Nicolay

We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab ...

2008

Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs

Nicolas Grandjean, Jean-François Carlin

Gate and drain-lag effects are studied in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs grown on sapphire. Electron trapping on the surface states between the gate and the drain forming the net negative charge up-to similar to 2 x 10(13) cm(-2) is found to be re ...

Wiley2007

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

AllnN/GaN high electron mobility transistors (HEMTs) on sapphire substrate have yielded a maximum drain current density of 1.26 A/mm with a current gain cutoff and maximum oscillation frequencies about 26 and 40 GHz, respectively, for a 0.25 mu m gate leng ...

2007

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

Davide Maria Di Paola, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Duncan Thomas Lindsay Alexander, Danxuan Chen, Thomas Fjord Kjaersgaard Weatherley, Pierre Christophe Lottigier

In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (

MDPI2023

Testing the Temperature Limits of GaN-Based HEMT Devices

Nicolas Grandjean, Jean-François Carlin

The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in ...

2010

Pinning and Depinning of the Polarization of Exciton-Polariton Condensates at Room Temperature

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Jacques Levrat, Marlene Glauser

A room temperature polariton condensate realized in a microcavity with embedded GaN quantum wells emits linearly polarized light at threshold with the plane of polarization pinned to one of the crystallographic axes. With increasing pumping power, a depinn ...

2010

Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Anas Mouti

Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within ...

2009

Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Gordon Jens Callsen, Joachim Armand Simonne Ciers

Polariton lasers are mostly based on planar cavities. Here we focus on an alternative configuration with slab waveguide modes strongly coupled to excitons confined in GaN/AlGaN quantum wells. We study experimentally and theoretically polariton relaxation a ...

2020

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

Nicolas Grandjean, Jean-François Carlin, Elison de Nazareth Matioli, Pirouz Sohi

In this study, we propose a novel, high-conductivity multi-channel heterostructure based on lattice-matched InAlN/GaN channels with modulation-doping-induced two-dimensional electron gases (2DEGs). To facilitate device processing, the channel period thickn ...

IOP PUBLISHING LTD2021

Interface States and Trapping Effects in Al1O3- and ZrO2/InAlN/AlN/GaN Metal-Oxide-Semiconductor Heterostructures

Nicolas Grandjean, Jean-François Carlin

We investigate Al2O3- and ZrO2/InAlN/GaN metal-oxide-semiconductor heterostructures (MOS-H) using capacitance-time transients in the temperature range of 25-300 degrees C. A deep-level transient spectroscopy based analysis revealed the maximum interface st ...

2009

InAlN underlaver for near ultraviolet InGaN based light emitting diodes

Nicolas Grandjean, Jean-François Carlin, Camille Haller

We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhi ...

2019

Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared

Nicolas Grandjean, Jean-François Carlin, Vincenzo Savona, Raphaël Butté, Matteo Galli, Momchil Minkov, Noelia Vico Triviño

Photonic crystal point-defect cavities were fabricated in a GaN free-standing photonic crystal slab. The cavities are based on the popular L3 design, which was optimized using an automated process based on a genetic algorithm, in order to maximize the qual ...

American Institute of Physics2014

Characterization of deep levels in n-GaN by combined capacitance transient techniques

Jean-François Carlin, Marc Ilegems, Marcel Py

Deep centers in undoped n-GaN grown by Hydride Vapor Phase Epitaxy were characterized by Deep Level Transient Spectroscopy (DLTS), revealing four known levels with activation energies in the range 0.17-0.94 eV. Deeper levels in the bandgap were observed by ...

Wiley2005

Selective oxidation of AlInN layers for current confinement in III-nitride devices

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Julien Dorsaz

Highly selective oxidation of an AlInN interlayer buried in a GaN matrix is demonstrated. This technique was successfully applied to form current apertures in III-nitride light-emitting diodes (LEDs). GaN LEDs were grown by metal-organic vapor phase epitax ...

2005

Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime

Nicolas Grandjean, Jean-François Carlin, Pierre Stadelmann, Raphaël Butté, Antonino Francesco Castiglia, Eric Feltin, Anas Mouti, Gabriel Christmann

An AlInN/AlGaN microcavity (MC) containing a GaN/Al0.2Ga0.8N multiple quantum well (MQW) structure is investigated through room temperature (RT) photoluminescence and reflectivity experiments. A vacuum Rabi splitting as large as 50 meV at RT is reported fo ...

2008

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guid ...

2008

Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

Nicolas Grandjean, Jean-François Carlin

We report on an annealing-induced "gate sinking" effect in a 2-nm-thin In0.17Al0.83N/AlN barrier high electron mobility transistor with Ir gate. Investigations by transmission electron microscopy linked the effect to an oxygen containing interlayer between ...

2010

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Yi Wang, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté

Intrinsic and extrinsic pinning and passivation of ...

AMER INST PHYSICS2020

Quantifying carbon site switching dynamics in GaN by electron holography

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté

Off-axis electron holography is utilized to identify point defect reactions and quantify their dynamics by probing the time and temperature dependence of the Fermi level upon annealing. The methodology is illustrated using implanted carbon (C) in GaN, wher ...

2025

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Duncan Thomas Lindsay Alexander, Wei Liu, Wei Liu, Thomas Fjord Kjaersgaard Weatherley

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QW ...

AMER CHEMICAL SOC2021