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Jean-François Carlin

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Publications associées (189)

Testing the Temperature Limits of GaN-Based HEMT Devices

Jean-François Carlin, Nicolas Grandjean

The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in ...

2010

Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

Jean-François Carlin, Nicolas Grandjean

The current-voltage characteristics of the Ni/InAlN/GaN Schottky diodes were measured at various temperatures in the range of 300-700 K. The experimental data were analyzed considering different current-transport mechanisms. From the analysis it follows th ...

2010

Pinning and Depinning of the Polarization of Exciton-Polariton Condensates at Room Temperature

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Marlene Glauser

A room temperature polariton condensate realized in a microcavity with embedded GaN quantum wells emits linearly polarized light at threshold with the plane of polarization pinned to one of the crystallographic axes. With increasing pumping power, a depinn ...

2010

Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Marlene Glauser

The pressure-induced changes in the electronic band structures of In-containing nitride alloys, InxGa1-xN and InxAl1-xN are examined experimentally as well as by ab initio calculations. It is found that the band gap pressure coefficients, dE(g)/dp, exhibit ...

2010

Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes

Jean-François Carlin, Nicolas Grandjean, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni

We measure the modal absorption coefficient of the InGaN quantum wells (QWs) in the absorber section of (Al,In)GaN multisection laser diodes as a function of bias voltage and photon energy using optical gain-spectroscopy. In the examined laser diodes, the ...

AIP American Institute of Physics2010

Sputtering of (001)AlN thin films: Control of polarity by a seed layer

Jean-François Carlin, Paul Muralt, Denis Martin, Jürgen Brugger, Nicolas Grandjean, Evgeny Milyutin, Andreea Veronica Savu, Scott Harada

The authors report on the ability to control the polarity of sputter deposited AlN001 thin ﬁlms using seed layers. Reactive sputter deposition leads to N-polarity on any substrate hitherto applied, i.e., Si111, sapphire, SiO2, and polycrystalline metals su ...

American Vacuum Society2010

Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Eric Feltin, Antonino Francesco Castiglia

We demonstrate room-temperature continuous-wave operation of 425 nm InGaN-based blue laser diodes including a thin Al0.83In0.17N optical blocking layer. Structures are grown on c-plane GaN freestanding substrates with a lattice-matched AlInN layer position ...

AIP American Institute of Physics2010

Probing exciton density of states through phonon-assisted emission in GaN epilayers: A and B exciton contributions

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Massimo Gurioli

A detailed experimental investigation of the phonon-assisted emission in a high-quality c-plane GaN epilayer is presented up to 200 K. By performing photoluminescence and reflectivity measurements, we find important etaloning effects in the phonon-replica ...

2010

AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia

We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420 nm. Structures with standard claddings (p-and n-AlGaN), asymmetric claddings (p-GaN and n-AlGaN), and AlGaN-free claddings were grown by metal organic vapo ...

2010

Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Anas Mouti

The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/Al2O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexago ...

AIP American Institute of Physics2010

Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin

The evolution of the polariton condensation threshold (P-thr) under incoherent optical pumping is investigated both theoretically and experimentally over a wide range of temperatures (4-340 K) and exciton-cavity photon detunings (-120-0 meV) in a multiple ...

2010

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

Jean-François Carlin, Nicolas Grandjean, Marcus Gonschorek

We have investigated an inductively coupled plasma etching recipe using SiCl4 and SF6 with a resulting selectivity >10 for GaN in respect to InAlN. The formation of an etch-resistant layer of AlF3 on InAlN required about 1 min and was noticed by a 4-times- ...

2010

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F-T=144 GHz

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

One-hundred-nanometer-gate (Al, In) N/GaN highelectron- mobility transistors (HEMTs) grown on semi-insulating SiC achieve a maximum current density of 1.84 A/mm at V-GS = 0 V, an extrinsic transconductance of 480 mS/mm, and a peak current gain cutoff frequ ...

Institute of Electrical and Electronics Engineers2010

Towards room temperature electrically pumped blue vertical cavity surface emitting lasers

Jean-François Carlin, Alexei Altoukhov, Gatien Cosendey, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Antonino Francesco Castiglia

The authors report on strategies to achieve lasing in electrically driven vertical cavity surface emitting lasers at room temperature, namely the improvement of the quality factor of a microcavity suited for electrical injection, the use of a ZnO contact t ...

Ieee2009

InAIN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases

Jean-François Carlin, Nicolas Grandjean

Al2O3 thin films were deposited by a metal organic chemical vapour deposition on InAIN/GaN heterostructures using Ar or NH3 as a carrier gas. Effects of NH3 and Ar carrier gases on the electrical and structural properties of Al2O3/InAIN/GaN HEMT devices we ...

2009

Tailoring the strong coupling regime in III-nitride based microcavities for room temperature polariton laser applications

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

We report on the properties of III-nitride based microcavities (MCs) operating in the strong coupling regime (SCR) up to room temperature. We first discuss why this class of materials is well suited to investigate the physics of cavity polaritons, which ar ...

Wiley-Blackwell2009

Phase diagram of a polariton laser from cryogenic to room temperature

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

The signature of the strong-coupling regime is unambiguously evidenced in a GaN-based microcavity (MC) above the polariton lasing threshold P-thr at room temperature through the observation of the upper polariton branch. The MC system exhibits a renormaliz ...

2009

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress (with a partially opened channel), and a negative gate bias stress (with so ...

2009

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

Jean-François Carlin, Alexei Altoukhov, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia

The authors report on the achievement of a vertically oriented three pair airgap/GaN distributed Bragg reflector realized by controlled oxidation and wet-chemical etching of AlInN sacrificial layers. Microreflectivity measurements exhibit high peak reflect ...

2009

Mapping Polarization Fields in Al0.85In0.15N/AlN/GaN Heterostructures

Jean-François Carlin, Nicolas Grandjean, Anas Mouti

Cambridge, Cambridge University Press2009

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