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Jean-François Carlin

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Publications associées (189)

Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Lorenzo Lugani

We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 degrees C and show that they are not fully stable. In particular, InAlN top layers undergo degradation duri ...

Amer Inst Physics2014

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Lorenzo Lugani

Nonintentionally doped 200-nm-thick In0.16Al0.84N/n(+)-GaN samples were grown by metal-organic vapor phase epitaxy and used for the electrical characterization of InAlN. In the temperature range 180-400 K, the forward current of Schottky diodes is dominate ...

Amer Physical Soc2014

Biexcitonic molecules survive excitons at the Mott transition

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Mehran Shahmohammadi, Georg Rossbach, Gwénolé Jean Jacopin

When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually refer ...

Nature Publishing Group2014

M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Georg Rossbach

We report on the epitaxial growth of high-quality core-shell nonpolar m-plane GaN/InAlN multiple quantum wells (MQWs) on the sidewall facets of c-oriented hexagonal GaN wires. Pseudomorphic growth without generation of threading dislocations has been estab ...

Amer Chemical Soc2014

Leakage mechanisms in InAlN based heterostructures

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Lorenzo Lugani

We propose a model for leakage currents in Schottky contacts on InAlN/GaN heterostructures based on two distinct tunneling mechanisms. Our modeling relies on structural parameters, in particular, InAlN dielectric constant, interface polarization charges an ...

Amer Inst Physics2014

InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Marlene Glauser, Christian Mounir, Georg Rossbach

Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadenin ...

Amer Inst Physics2014

Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared

Vincenzo Savona, Jean-François Carlin, Nicolas Grandjean, Matteo Galli, Raphaël Butté, Noelia Vico Triviño, Momchil Minkov

Photonic crystal point-defect cavities were fabricated in a GaN free-standing photonic crystal slab. The cavities are based on the popular L3 design, which was optimized using an automated process based on a genetic algorithm, in order to maximize the qual ...

American Institute of Physics2014

n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

Daniel Marti, Jean-François Carlin, Nicolas Grandjean, Etienne François Olivier Giraud, Marco Malinverni, Lorenzo Lugani

We report on the low-temperature growth of heavily Si-doped (>10(20) cm(-3)) n(+)-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (

Amer Inst Physics2014

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Jean-François Carlin, Gatien Cosendey, Nicolas Grandjean, Raphaël Butté

Thanks to its high refractive index contrast, band gap, and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet light-emitting diod ...

Amer Inst Physics2013

Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

Jean-François Carlin, Gatien Cosendey, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Marlene Glauser, Georg Rossbach

A 3 lambda/2 (In,Ga)N/GaN resonant cavity, designed for similar to 415nm operation, is grown by molecular beam epitaxy and is sandwiched between a 39.5-period (In,Al)N/GaN distributed Bragg reflector (DBR), grown on c-plane GaN-on-sapphire pseudo-substrate ...

Amer Inst Physics2013

ZrO2/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Jean-François Carlin, Nicolas Grandjean

We report on InAlN/GaN heterostructure metal-oxide-semiconductor field-effect transistors (MOSHFETs) with an InAlN barrier layer of different compositions (x(InN) 13, 17, and 21%) and ZrO2 gate-insulator/passivation. Static measurements yielded higher drai ...

Iop Publishing Ltd2013

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Jean-François Carlin, Marcel Py, Denis Martin, Nicolas Grandjean, Lorenzo Lugani

We report on InAlN/GaN high electron mobility transistors (HEMTs) grown by metal organic vapor phase epitaxy on sapphire with ultrathin buffers. Two dimensional electron gas (2DEG) exhibiting high mobility (1100 cm(2) /V s) and low sheet resistivity (356 O ...

Amer Inst Physics2013

Impact of saturation on the polariton renormalization in III-nitride based planar microcavities

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Georg Rossbach

It has been widely observed that an increasing carrier density in a strongly coupled semiconductor microcavity (MC) alters the dispersion of cavity polaritons, below and above the condensation threshold. The interacting nature of cavity polaritons stems fr ...

Amer Physical Soc2013

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Jean-François Carlin, Gatien Cosendey, Nicolas Grandjean, Antonino Francesco Castiglia, Georg Rossbach

We report on III-nitride based blue vertical cavity surface emitting lasers using defect-free highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN substrates. Lasing is demonstrated at room temperature under pulsed el ...

American Institute of Physics2012

Static and dynamic properties of multi-section InGaN-based laser diodes

Jean-François Carlin, Julien Dorsaz, Dmitri Boiko, Nicolas Grandjean, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni, Xi Zeng, Jean-Michel Jacques Lamy

We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the ...

Amer Inst Physics2012

Near-infrared characterization of gallium nitride photonic-crystal waveguides and cavities

Jean-François Carlin, Romuald Houdré, Nicolas Grandjean, Ulagalandha Perumal Dharanipathy, Noelia Vico Triviño, Zhaolu Diao

We report the design and optical characterization of fully suspended wire waveguides and photonic crystal (PhC) membranes fabricated on a gallium nitride layer grown on silicon substrate operating at 1.5 mu m. W1-type PhC waveguides are coupled with suspen ...

Optical Society of America2012

Effect of applied bias voltage on the static and dynamic characteristics of self-pulsating multi-section InGaN-based laser diode

Jean-François Carlin, Dmitri Boiko, Nicolas Grandjean, Luca Alex Milo Sulmoni, Xi Zeng, Jean-Michel Jacques Lamy

Ieee2012

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Pierre Michel Corfdir, Georg Rossbach

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. ...

2012

Mg doping for p-type AlInN lattice-matched to GaN

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Antonino Francesco Castiglia

P-type AlInN layers lattice-matched to GaN are achieved by Mg doping. The net acceptor concentration N-A-N-D is 5 x 10(18) cm(-3) at a Mg concentration [Mg] of similar to 2 x 10(19) cm(-3). Mg acceptors are partly compensated and one of the compensating de ...

American Institute of Physics2012

High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

Jean-François Carlin, Romuald Houdré, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Kirill Atlasov, Antonino Francesco Castiglia, Ulagalandha Perumal Dharanipathy, Noelia Vico Triviño, Georg Rossbach

We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and ...

American Institute of Physics2012

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