Jean-François Carlin

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The evolution of the polariton condensation threshold (P-thr) under incoherent optical pumping is investigated both theoretically and experimentally over a wide range of temperatures (4-340 K) and exciton-cavity photon detunings (-120-0 meV) in a multiple ...

The authors report the realization of InGaN/GaN light emitting diodes (LEDs) with an electrical injection design suitable for vertical cavity surface emitting lasers. Controlled oxidation of an AlInN interlayer lattice matched to GaN allows confining the i ...

Thanks to its high refractive index contrast, band gap, and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet light-emitting diod ...

InGaN/GaN-based light-emitting diodes (LEDs) exhibit remarkable tolerance to high threading dislocation densities (TDDs), maintaining internal quantum efficiencies above 90% at room temperature even with TDD exceeding 108 cm−2. This robustness is attributed to V-shaped pits (V-pits), which form around threading dislocations (TDs) in InGaN/GaN quantum wells (QWs) and create potential barriers that inhibit carrier diffusion toward non-radiative dislocation cores. However, assessing the intrinsic non-radiative

DC and RF measurements of an emerging AIInN/GaN high electron mobility transistor (HEMT) technology for power performances are reported. High electron transport properties in this structure attributed to the material quality are demonstrated. Indeed, in sp ...

Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achie ...

We have studied the indium and gallium incorporation during growth by chemical beam epitaxy of GaInAs, GaInP and GaInAsP alloys. TMIn, TEGa, cracked AsH3 and PH3 sources were used. The indium incorporation ratio remains nearly constant over the range of parameters investigated. whereas the gallium incorporation depends on the indium concentration, on the phosphorus concentration and on the growth temperature. The gallium incorporation ratio decreases linearly with indium content of the grown layer and the e

We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInN/GaN multiple-quantum-wells. A clear absorption peak is observed around 3 mu m involving transitions from the conduction band ground state to the first ex ...

We investigate the degradation mechanisms of In0.2Ga0.8N/GaN light emitting diodes through combined experimental analysis and simulations. The devices were submitted to constant current stress at 100 mA. Depending on the measuring current level, two degrad ...

We demonstrate room-temperature continuous-wave operation of 425 nm InGaN-based blue laser diodes including a thin Al0.83In0.17N optical blocking layer. Structures are grown on c-plane GaN freestanding substrates with a lattice-matched AlInN layer position ...

AlInN/GaN unpassivated High Electron Mobility Transistor (HEMT) on Sapphire substrate has yielded a maximum drain current density close to 2 A/mm in steady state. Superior gate length downscaling than AlGaN/GaN devices has been observed owing to the possib ...

We present experimental transport characteristics of long and ballistic superconductor - 2-dimensional electron gas - superconductor junctions obtained in a temperature range from 1K down to 10mK. Surprisingly the critical current I-c can be fitted to the ideal junction temperature dependence, I-c(T) proportional to exp(-T/T-0) approximate to exp(-L/xi(T)), with xi(T) the thermal coherence length, despite the presence of interface barriers and a to small I-c. We propose that the conflict between the experim

An indium-containing layer positioned underneath the InGaN/GaN quantum well (QW) active region is commonly used in high efficiency blue light-emitting diodes. Recent studies proposed that the role of this underlayer is to trap surface defects (SDs), which, ...

The purpose of this paper is to present a detailed characterization of a dual-wavelength VCSEL - the BiVCSEL. This device consists of two active optical cavities, which share a coupling mirror and can be independently electrically pumped. We present the output powers for the two emitted wavelengths (short - lambda(S), long - lambda(L)) versus the currents in the two cavities (I-TOP, I-BOT). These (lambda(S), lambda(L))-(I-TOP, I-BOT) maps identify the different regimes of operation of the BiVCSEL: emission

We report on a practical method for developing InGaN-based edge emitting laser diodes of cavity length down to 45 mu m. Samples consisting of one uncoated cleaved facet and one etched facet coated with a high-reflectivity (HR) dielectric distributed Bragg ...

We present the technology and performance of InAlN/AlN/GaN MOS HEMTs with gate insulation and surface passivation using ZrO2 or HfO2. About 10-nm-thick high-k dielectrics were deposited by MOCVD before the ohmic contact processing. Plasma pretreatment allo ...

In the following, we report investigations of the dependencies of the structural, optical and electrical characteristics of InN thin films grown by MOCVD on the growth temperature. The layer thicknesses range from 70 to 400 nm. Their carrier concentrations range from 7 x 10 18 to 4 x 10(19) cm(-3). Hall mobility values from 150 to 1300 cm(2)/V/s were determined in these films. The variation of the growth temperature and V/III ratio brought about different growth modes and rates. Using TEM, in addition to me

We report strong exciton-photon coupling at room temperature in a hybrid high quality bulk 3 lambda/2 GaN cavity with a bottom lattice-matched AlInN/AlGaN distributed Bragg reflector through angle-resolved polarized photoluminescence (PL). Coupling of the ...

We present a monolithically integrated vertical coupled cavity surface-emitting laser diode which exhibits stable laser emission at two design wavelengths simultaneously. The device consists of two slightly asymmetric coupled vertical cavities containing strained InGaAs quantum wells as the gain media. The shorter cavity is pumped electrically. Lasing starts on the short wavelength mode at 927 nm. The laser emission then acts as an optical pump for the quantum wells in the longer cavity and provides additio

Microcavity light-emitting diodes (MCLEDs) with top-emitting geometry have been grown by molecular beam epitaxy on GaAs and Si substrates. External quantum efficiencies of up to 10% were obtained for 420 x 420 mu m(2) homoepitaxial devices. The efficiency of 32 x 32 mu m(2) diodes was 4% for homoepitaxial devices and 1% for diodes realized on conformal GaAs-on-Si stripes. Much lower efficiencies were obtained for devices grown directly on GaAs-on-Si seed layers, demonstrating that the conformal epitaxy tech

Jean-François Carlin

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Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory

Efficient current injection scheme for nitride vertical cavity surface emitting lasers

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Evidence of the non-radiative character of dislocations in V-pit-free InGaN/GaN quantum wells

Small-signal characteristics of AlInN/GaN HEMTs

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

QUANTITATIVE STUDY OF THE INCORPORATION OF GROUP-III ELEMENTS IN CHEMICAL BEAM EPITAXY OF GAINASP ALLOYS

Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells

Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs

Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

AlInN/GaN a suitable HEMT device for extremely high power high frequency applications

Experimental S-2DEG-S junction characteristics and a novel interpretation

GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface

Light-current characterization of dual-wavelength VCSELs

Short cavity InGaN-based laser diodes with cavity length below 300 mu m

Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2

Structural and optical characterization of InN layers grown by MOCVD

Room-temperature polariton luminescence from a bulk GaN microcavity

The dual wavelength Bi-vertical cavity surface-emitting laser

High-efficiency top-emitting microcavity LEDs on GaAs and GaAs Si substrates