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Elison de Nazareth Matioli

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Related publications (119)

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Catherine Erine, Luca Nela

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

Institute of Electrical and Electronics Engineers2019

Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu

Institute of Electrical and Electronics Engineers2019

Enhanced DAB for Efficiency Preservation using Adjustable-Tap High-Frequency Transformer

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Furkan Karakaya

Efficient DC-DC power-conversion with wide-span voltage-regulation is crucial to a sustainable and robust power electronics system. Dual-active-bridge (DAB) offers straight-forward regulation and its transformer enables voltage step-up/down required for ma ...

2019

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Remco Franciscus Peter van Erp, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide

Elison de Nazareth Matioli, Jun Ma, Taifang Wang, Luca Nela

We report a novel process to achieve slanted field plate (S-FP), which is a field plate with a gradual increase thickness from gate edge towards drain - utilizing grayscale lithography on flowable oxide (FOX) in single process step, in which developed FOX ...

IEEE2019

Ultra-High Power Density Magnetic-less DC/DC Converter Utilizing GaN Transistors

Elison de Nazareth Matioli, Georgios Kampitsis, Remco Franciscus Peter van Erp

In this paper, a high step-up magnetic-less DC/DC nX converter is designed and experimentally evaluated. GaN transistors are applied in a nX converter topology, yielding ultrahigh power density and high conversion efficiency. The absence of magnetic materi ...

IEEE2019

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

Elison de Nazareth Matioli, Giovanni Santoruvo, Mohammad Samizadeh Nikooytabalvandani

Microwave zero-bias rectifiers are fast devices capable of rectifying RF signals without applied bias, which have applications ranging from RF power detection to THz imaging systems. Here we present gated nanowire field-effect rectifiers (NW-FERs) fabricat ...

2019

A manifold microchannel heat sink for ultra-high power density liquid-cooled converters

Elison de Nazareth Matioli, Georgios Kampitsis, Remco Franciscus Peter van Erp

Increase in heat fluxes as a result of the miniaturization of power electronics demands new thermal management solutions such as liquid cooling, because of its high heat extraction capabilities. This work describes a new silicon-based heat sink that takes ...

IEEE2019

High performance Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Chao Liu

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019

GaN Transistors for Miniaturized Pulsed-Power Sources

Elison de Nazareth Matioli, Armin Jafari

2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Luca Nela

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate achieved by a nanostructured gate region in combination with a large work-function gate met ...

IEEE2019

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Giovanni Santoruvo, Taifang Wang, Luca Nela

In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...

2019

High-performance normally-off tri-gate GaN power MOSFETs

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Luca Nela

In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high out ...

IEEE2019

On the Dynamic Performance of Laterally Gated Transistors

Elison de Nazareth Matioli, Giovanni Santoruvo, Armin Jafari, Catherine Erine, Mohammad Samizadeh Nikooytabalvandani

Laterally gated transistors have been proposed as an innovative device architecture in which a semiconducting channel is controlled by side gates. In this sense, the gate can either be in contact with the sidewalls or be separated by a gap. In the latter c ...

Institute of Electrical and Electronics Engineers2019

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Kai Cheng, Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Catherine Erine, Luca Nela

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...

IEEE2019

New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

The low ON-resistance of wide-band-gap (WBG) transistors is a key feature for efficient power converters, however, the anomalous loss in their output capacitance (COSS) severely limits their performance at high switching frequencies. Characterizing COSS-lo ...

2019

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Remco Franciscus Peter van Erp, Mehdi Naamoun

Many high power (opto-) electronic devices such as transistors, diodes, and lasers suffer from significant hot spot temperature rises due to the high heat fluxes generated in their active area, which limits their performance, reliability, and lifetime. Emp ...

2019

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Elison de Nazareth Matioli, Jun Ma

AIP American Institute of Physics2018

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu

Institute of Electrical and Electronics Engineers2018

Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain

Elison de Nazareth Matioli, Jun Ma

In this work we present uni-directional GaN-on-Si MOSHEMTs with state-of-the-art reverse-blocking performance. We integrated tri-anode Schottky barrier diodes (SBDs) with slanted tri-gate field plates (FPs) as the drain electrode, and achieved a high rever ...

2018

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