Publication

Semiconductor device comprising a three-dimensional field plate

Elison de Nazareth Matioli, Jun Ma
2018
Patents

Abstract

The present invention relates to a Semiconductor device including a first electrode, a second electrode and at least one semiconductor material or layer between the first and second electrode. The semiconductor device further includes at least one field plate structure for increasing a breakdown voltage of the semiconductor device. The at least one field plate structure comprises at least two recesses in the at least one semiconductor material or layer, the at least two recesses defining a semiconductor region therebetween, and a third electrode contacting or provided on the semiconductor region.

Official source

https://infoscience.epfl.ch/entities/publication/7ac525d8-1181-445e-b8eb-0324931f6c90

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Semiconductor device comprising a three-dimensional field plate

Chat with Graph Search

Controlling On-Surface Photoactivity: The Impact of π-Conjugation in Anhydride-Functionalized Molecules on a Semiconductor Surface

Theoretical explanation of passivation behavior in OFP-Cu and OF-Cu

Lithium tantalate photonic integrated circuits for volume manufacturing