Elison de Nazareth Matioli

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In this study, we propose a novel, high-conductivity multi-channel heterostructure based on lattice-matched InAlN/GaN channels with modulation-doping-induced two-dimensional electron gases (2DEGs). To facilitate device processing, the channel period thickn ...

In this letter, we introduce and demonstrate the concept of slanted tri-gates to enhance the breakdown voltage (V-BR) in lateral GaN power devices. Conventionally, field plates (FPs) are used to enhance the V-BR by distributing more homogeneously the elect ...

In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high out ...

The low ON-resistance of wide-band-gap (WBG) transistors is a key feature for efficient power converters, however, the anomalous loss in their output capacitance (COSS) severely limits their performance at high switching frequencies. Characterizing COSS-lo ...

We report the demonstration of p-NiO layers as junction termination extensions (JTEs) for realizing high-performance GaN power devices. The p-NiO was deposited by RF sputtering, a flexible process which enables to achieve high hole densities. In this work, ...

Soft-switching power converters based on wide-band-gap (WBG) transistors offer superior efficiency and power density advantages. However, at high frequencies, loss behavior varies significantly between different WBG technologies. This includes losses relat ...

Efficient DC-DC power-conversion with wide-span voltage-regulation is crucial to a sustainable and robust power electronics system. Dual-active-bridge (DAB) offers straight-forward regulation and its transformer enables voltage step-up/down required for ma ...

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

In this work, we present the investigation of the combination of p-GaN gate and tri-gate structures to achieve normally-off operation on GaN-on-Si MOSFETs. We have developed and optimized a selective and low-damage p-GaN etching recipe to stop at the AlGaN ...

Despite recent advancements in photonics and electronics, there remains a lack of efficient, compact, high-power sources in the terahertz spectrum (0.3-10 THz). Recent research has revealed that nanoplasma (NP) switches can exhibit extremely fast transitio ...

Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

Cascode topology which includes a high-voltage GaN and a low-voltage Si transistor is an attractive device concept, which uses the low ON-resistance of GaN while still being compatible with Si gate drivers. It demonstrates the highest threshold voltage amo ...

The lateral structure of gallium nitride (GaN) semiconductors enables monolithic integration of logic and power devices, which offers promise to miniaturize bulky converters into a compact package. However, the concentrated heat that arises from this dense ...

The inherent dissipated energy losses (Ediss) during the charging-discharging cycle of output capacitance (CO) in gallium nitride high-electron-mobility transistors (GaN HEMTs) limit their efficiency in soft-switching applications. Accurate characterizatio ...

In this paper, we illustrate the use of RF-sputtered p-NiO to fabricate Junction Termination Extensions (JTEs) for high-performance vertical GaN-on-Si Schottky Barrier Diodes (SBDs). The GaN epitaxial structures were grown on 6-inch Si wafers by MOCVD. The ...

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

In this work, we report on the switching performance of AlGaN/GaN lateral Tri-Anode SBDs. The Tri-Anode architecture leads to a more than 50% reduction in the device charge with respect to conventional planar structure, confirmed both by capacitive and rev ...

This paper discusses different measurement methods to evaluate the efficiency of WBG-based power supply solutions, including electrical measurement methods and their verification with calorimetric methods, and compares the performance of Si-based and GaN-b ...

Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. ...

Electronic metadevice comprising a conductive channel; a metal layer superposed on the conductive channel; and a barrier layer located between the metal layer and the conductive channel. The metal layer includes at least one recess extending through the me ...

Elison de Nazareth Matioli

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High conductivity InAlN/GaN multi-channel two-dimensional electron gases

Slanted Tri-gates for High-Voltage GaN Power Devices

High-performance normally-off tri-gate GaN power MOSFETs

New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors

p-NiO junction termination extensions for GaN power devices

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

Enhanced DAB for Efficiency Preservation using Adjustable-Tap High-Frequency Transformer

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Negative Resistance in Cascode Transistors

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l

Soft-Switching CO Hysteresis Losses in GaN HEMTs: A Resonant-Sawyer-Tower Measurement Method

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

Measurement of WBG-based power supplies

Room-Temperature Ballistic Transport in III-Nitride Heterostructures

Electronic metadevice