Elison de Nazareth Matioli

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Related publications (119)

Monolithic integration of GaN-based NMOS digital logic gate circuits with E-mode power GaN MOSHEMTs

In this work, we demonstrate high-performance NMOS GaN-based logic gates including NOT, NAND, and NOR by integration of E/D-mode GaN MOSHEMTs on silicon substrates. The load-to-driver resistance ratio was optimized in these logic gates by using a multi-fin ...

2018

645 V quasi-vertical GaN power transistors on silicon substrates

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu

In this paper, we present GaN-on-Si vertical transistors consisting of a 6.7 pm thick n-p-n heterostructure grown on 6-inch silicon substrates by MOCVD. The fabricated vertical trench gate MOSFETs exhibited E-mode operation with a threshold voltage of 3.3 ...

2018

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Kai Cheng, Elison de Nazareth Matioli, Jun Ma, Catherine Erine

AIP American Institute of Physics2018

Multi-Channel Tri-gate GaN Power Schottky Diodes with Low ON-Resistance

Kai Cheng, Elison de Nazareth Matioli, Jun Ma, Georgios Kampitsis

Institute of Electrical and Electronics Engineers2018

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Elison de Nazareth Matioli, Jun Ma, Taifang Wang

Institute of Electrical and Electronics Engineers2018

High Step-Up High-Frequency Zero-Voltage Switched GaN-Based Single-Stage Isolated DC-DC Converter for PV Integration and Future DC Grids

Elison de Nazareth Matioli, Armin Jafari

2018

Semiconductor device comprising a three-dimensional field plate

Elison de Nazareth Matioli, Jun Ma

The present invention relates to a Semiconductor device including a first electrode, a second electrode and at least one semiconductor material or layer between the first and second electrode. The semiconductor device further includes at least one field pl ...

2018

GaN-on-Si Quasi-Vertical Power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu

We demonstrate the first GaN vertical transistor on silicon, based on a 6.7-mu m-thick n-p-n heterostructure grown on 6-inch silicon substrate by metal organic chemical-vapor deposition. The devices consist of trench-gate quasi-vertical metal-oxide-semicon ...

Institute of Electrical and Electronics Engineers2018

Semiconductor devices with multiple channels and three-dimensional electrodes

Elison de Nazareth Matioli, Jun Ma

The present invention relates, for example, to a semiconductor structure containing multiple parallel channels in which several parallel conductive channels are formed within the semiconductor structure. Electric contact or electrostatic control over all t ...

2018

820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2

Kai Cheng, Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu

Institute of Electrical and Electronics Engineers2018

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-Off Voltage

Elison de Nazareth Matioli, Jun Ma, Dante Colao Zanuz

In this letter, we demonstrate a general model to reduce the reverse leakage current (I-R) in high-voltage AlGaN/GaN Schottky diodes (SBDs) by engineering the pinchoff voltage (V-p) of their field plates (FPs). The maximum voltage drop at the Schottky junc ...