Elison de Nazareth Matioli

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In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

We report a novel process to achieve slanted field plate (S-FP), which is a field plate with a gradual increase thickness from gate edge towards drain - utilizing grayscale lithography on flowable oxide (FOX) in single process step, in which developed FOX ...

We demonstrate the first GaN vertical transistor on silicon, based on a 6.7-mu m-thick n-p-n heterostructure grown on 6-inch silicon substrate by metal organic chemical-vapor deposition. The devices consist of trench-gate quasi-vertical metal-oxide-semicon ...

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate achieved by a nanostructured gate region in combination with a large work-function gate met ...

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

In this letter, we demonstrate a general model to reduce the reverse leakage current (I-R) in high-voltage AlGaN/GaN Schottky diodes (SBDs) by engineering the pinchoff voltage (V-p) of their field plates (FPs). The maximum voltage drop at the Schottky junc ...

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...

Gallium nitride (GaN) power devices are employed in an increasing number of applications thanks to their excellent performance. Nevertheless, their potential for cryogenic applications, such as space, aviation, and superconducting systems, has not yet been ...

Tri-Anode GaN Schottky Barrier Diodes (SBDs) have recently shown excellent DC performance with low turn-on voltage and large breakdown thanks to their 3D contact structure around the two-dimensional electron gas (2DEG) channel. However, the 3D nature of th ...

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

We present AlGaN/GaN nanostructured Schottky barrier diodes (SBDs) on silicon substrate with high breakdown voltage (V-BR) and low reverse leakage current (I-R), based on a hybrid of tri-anode and tri-gate architectures. The fabricated SBDs presented a sma ...

Multi-channel power devices, in which several AlGaN/GaN layers are stacked to achieve multiple two-dimensional electron gases (2DEGs), have recently led to a significant increase in the device conductivity while maintaining high breakdown voltage, resultin ...

The need for new accurate temperature monitoring is becoming high, especially with the proliferation of IoT monitoring and biological applications. In this work, we report the design, fabrication and electrical characterization results of a new type of res ...

The present invention relates to a method for fabricating an integrated electronic device with a microchannel, comprising the steps of: - Providing a homogeneous or heterogeneous substrate with one or more layers of material, respectively; - Forming at lea ...

The present invention relates to a Semiconductor device including a first electrode, a second electrode and at least one semiconductor material or layer between the first and second electrode. The semiconductor device further includes at least one field pl ...

The present invention concerns a diamond device or structure comprising at least one supporting layer or material including at least one or a plurality of support structures inside the at least one supporting layer or material; a plurality of recesses defi ...

Elison de Nazareth Matioli

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Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide

GaN-on-Si Quasi-Vertical Power MOSFETs

A perspective on multi-channel technology for the next-generation of GaN power devices

High-performance nanowire-based E-mode Power GaN MOSHEMTs

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-Off Voltage

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Fast-switching Tri-Anode Schottky Barrier Diodes for monolithically integrated GaN-on-Si power circuits

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films

Integrated electronic device with embedded microchannels and a method for producing thereof

Co-designing electronics with microfluidics for more sustainable cooling

Semiconductor device comprising a three-dimensional field plate

GaN Transistors for Miniaturized Pulsed-Power Sources

Diamond device or structure and method for producing a diamond device or structure