1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, resulting in an effective resistivity (ρ eff ) of only 1.1 mΩ•mm. The major limitation of high-conductivity multi-channel devices is their limited V BR . This work shows that while conventional field plates (FPs) are not suited to increase V BR in high-conductivity multi-channels, slanted tri-gates offer better electric field management inside the device. With a gate-to-drain separation (L GD ) of 15 µm, the device presented a low R ON of 2.8 Ω•mm (considering the full width of the device (w device )) and a high V BR of 1230 V, rendering a small specific R ON (R ON,SP ) of 0.47 mΩ•cm 2 and an excellent figure-of-merit of 3.2 GW/cm 2 . This work also shows the feasibility of E-mode multi-channel MOSHEMTs with a threshold voltage (V TH ) of +0.9 V at 1 µA/mm by tuning the tri-gate geometry. These results significantly outperform conventional single-channel devices and demonstrate the enormous potential of multi-channel power devices.