Publication

Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling

Mihai Adrian Ionescu, Didier Bouvet, Wladyslaw Grabinski
2011
Conference Papers

Abstract

In this paper, we demonstrate the integration of local oxidation and metal-gate strain technologies to induce 3.3%/5.6 GPa uniaxial tensile strain/stress in 2 μm long suspended Si nanowire MOSFETs, the highest process-based stress record in MOSFETs until now, by elastic local buckling. Significant stress level modulation in the channel from 1.2 to 5.6 GPa on a single wafer is demonstrated for the first time by varying the NW width. The GAA Si NW MOSFET with 5.6 GPa uniaxial tensile stress is characterized and the electron mobility enhancement is reported.

Official source

https://infoscience.epfl.ch/entities/publication/5aa94855-8caf-46be-b113-42e7e8eae3fc

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Mihai Adrian Ionescu, Didier Bouvet, Wladyslaw Grabinski
2011
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/5aa94855-8caf-46be-b113-42e7e8eae3fc

About this result

Related concepts (21)

Cauchy stress tensor

In continuum mechanics, the Cauchy stress tensor , true stress tensor, or simply called the stress tensor is a second order tensor named after Augustin-Louis Cauchy. The tensor consists of nine components that completely define the state of stress at a point inside a material in the deformed state, placement, or configuration. The tensor relates a unit-length direction vector e to the traction vector T(e) across an imaginary surface perpendicular to e: or, The SI units of both stress tensor and traction vector are N/m2, corresponding to the stress scalar.

Stress–strain curve

In engineering and materials science, a stress–strain curve for a material gives the relationship between stress and strain. It is obtained by gradually applying load to a test coupon and measuring the deformation, from which the stress and strain can be determined (see tensile testing). These curves reveal many of the properties of a material, such as the Young's modulus, the yield strength and the ultimate tensile strength. Generally speaking, curves representing the relationship between stress and strain in any form of deformation can be regarded as stress–strain curves.

Stress–strain analysis

Stress–strain analysis (or stress analysis) is an engineering discipline that uses many methods to determine the stresses and strains in materials and structures subjected to forces. In continuum mechanics, stress is a physical quantity that expresses the internal forces that neighboring particles of a continuous material exert on each other, while strain is the measure of the deformation of the material. In simple terms we can define stress as the force of resistance per unit area, offered by a body against deformation.

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Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling

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