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Mihai Adrian Ionescu

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Related publications (403)

Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis

This paper reports on the top-down fabrication and electrical performance of silicon nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on bulk silicon using a local-silicon-on-insulator (SOI) process. The proposed local-SOI ...

2008

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives

Philippe Renaud, Mihai Adrian Ionescu, Nicolas Abelé

A 14-MHz in-plane nanoelectromechanical resonator based on a resonant-suspended-gate (RSG) MOSFET principle and integrated in a front-end process is demonstrated. The devices are in-plane flexural vibration mode beams (L = 10 mum, w = 165 nm, and h = 400 n ...

Institute of Electrical and Electronics Engineers2008

RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate

Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

A high capacitive ratio RF MEMS switch, with low-actuation voltage is designed, fabricated and experimentally validated on high-resistivity silicon (HRS) substrate. Thanks to very good fabrication control of all steps and to the high dielectric constant of ...

Elsevier2008

Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs

Michel Declercq, Mihai Adrian Ionescu, Yogesh Singh Chauhan

A detailed analysis of capacitance behavior of high-voltage MOSFET (HV-MOS), for example, LDMOS, using device simulation is made. The impact of lateral nonuniform doping and drift region are separately analyzed. It is shown that the peaks in C-GD and C-GS ...

2008

Compact Modeling of Suspended Gate FET

Michel Declercq, Mihai Adrian Ionescu, Christoph Eggimann, Yogesh Singh Chauhan, Nicolas Abelé, Dimitrios Tsamados

For the first time, a compact model for suspended gate (SG) FET valid for entire bias range is proposed. The model is capable of simulating both pull-in and pull-out effects, which are the two important phenomena of this device. A novel hybrid numerical si ...

2008

Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories

Didier Bouvet, Yusuf Leblebici, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Giovanni De Micheli, David Atienza Alonso, Mohamed Haykel Ben Jamaa

The fabrication of crossbar memories with sublithographic features is expected to be feasible within several emerging technologies; in all of them, the nanowire (NW) decoder is a critical part since it bridges the sublithographic wires to the outer circuit ...

2008

Laterally vibrating-body double gate MOSFET with improved signal detection

Mihai Adrian Ionescu, Daniel Grogg, Marco Mazza, Nicoleta-Diana Ciressan, Hüseyin Cumhur Tekin, Dimitrios Tsamados

Laterally vibrating-body double-gate MOSFET that shows a +30 dB signal increase compared to an identical resonator operating with pure capacitive detection is reported. The double-gate MOSFET is fabricated on SOI substrate with silicon film thickness of 1. ...

2008

Nanoscale strain characterisation for ultimate CMOS and beyond

Mihai Adrian Ionescu, Kirsten Emilie Moselund

Strain engineering is used to maintain Moore's Law in scaled CMOS devices and as a technology booster for More-than-Moore devices in the nanoelectronics era. Strain is crucial because of its ability to increase electron and hole mobilities in Si. However, ...

Elsevier2008

A new definition of threshold voltage in Tunnel FETs

Mihai Adrian Ionescu, Katherine Boucart

This work reports on the physical definition and extraction of threshold voltage in Tunnel FETs (field effect transistors) based on numerical simulation data. It is shown that the Tunnel FET has the outstanding property of having two threshold voltages: on ...

2008

Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

Didier Bouvet, Maher Kayal, Vincent Pott, Mihai Adrian Ionescu, Cédric Meinen, Kirsten Emilie Moselund

In the present work a punch-through impact ionization MOSFET (PIMOS) is presented, which exploits impact ionization in low-doped body-tied [Omega]- and tri-gate structures to obtain abrupt switching (3-10 mV/decade) combined with a hysteresis in the ID(VDS ...

2008

Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO₂ gate stack

Didier Bouvet, Mihai Adrian Ionescu, Giovanni Antonio Salvatore

This work experimentally demonstrates, for the first time, that by integrating a thin ferroelectric layer into a gate stack of a standard MOS transistor one, it is possible to overcome the 60 mV/decade subthreshold swing limit at room temperature of MOSFET ...

2008

Oscillator Based on Suspended Gate MOS Transistors

Mihai Adrian Ionescu, Marco Mazza, Yogesh Singh Chauhan, Alexandru Rusu

The paper deals with the oscillator applications based on vibrating mode of the suspended gate SG-MOSFET transistor. In order to simulate the electrical behavior of the transistor a small-signal equivalent circuit of the gate is proposed and validated. An ...

2008

Fault-Tolerant Multi-Level Logic Decoder for Nanoscale Crossbar Memory Arrays

Didier Bouvet, Yusuf Leblebici, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Giovanni De Micheli, David Atienza Alonso, Mohamed Haykel Ben Jamaa

Several technologies with sub-lithographic features are targeting the fabrication of crossbar memories in which the nanowire decoder is playing a major role. In this paper, we suggest a way to reduce the decoder size and keep it defect tolerant by using mu ...

2007

RF MEMS capacitive switch on semi-suspended CPW using low-loss HRS

Julien Perruisseau-Carrier, Mihai Adrian Ionescu

2007

Solid-state electronics special issue foreword

Yusuf Leblebici, Mihai Adrian Ionescu

2007

MEMS tunable capacitors with fragmented electrodes and rotational electro-thermal drive

Mihai Adrian Ionescu, Alexander Mehdaoui, Dimitrios Tsamados

Springer, Springer-Verlag2007

High Quality Factor Copper Inductors Integrated in Deep Dry Etched Quartz Substrates

Didier Bouvet, Mihai Adrian Ionescu, Cyrille Hibert, Christine Leroy

2007

Fabrication of Silicon-On-Insulator MEM Resonators with Deep Sub-Micron Transduction Gaps

Mihai Adrian Ionescu, Cyrille Hibert, Marco Mazza, Nicoleta-Diana Ciressan

2007

Charge carriers photogeneration in pentacene field effect transistors

Mihai Adrian Ionescu, Costin Anghel

Organic FET transistors (OFETs) were fabricated on silicon substrates using pentacene as active organic layer and gold source and drain contacts. OFETs were used as test structures in order to study carriers photogeneration effect in organic layers. Photog ...

2007

MEMS Tunable Capacitor with Fragmented Electrodes and Rotational Electro-Thermal Drive

Mihai Adrian Ionescu, Alexander Mehdaoui, Dimitrios Tsamados

2007

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