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Nicolas Grandjean

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Publications associées (239)

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Tailoring the strong coupling regime in III-nitride based microcavities for room temperature polariton laser applications

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Gabriel Christmann, Jacques Levrat

We report on the properties of III-nitride based microcavities (MCs) operating in the strong coupling regime (SCR) up to room temperature. We first discuss why this class of materials is well suited to investigate the physics of cavity polaritons, which ar ...

Wiley-Blackwell2009

AlN-based anodes for far-UVC field emission device at 225 nm

Nicolas Grandjean, Jean-François Carlin, Pierre Jean-François Jules Demolon

We report on progress in the realization of Field Emission Devices (FED) with AlN-based anodes emitting in the spectral window of 200-230nm for persistent disinfection of air and surfaces in the presence of humans. Modeling, experimental studies, and trade ...

SPIE2024

Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

Nicolas Grandjean, Denis Martin, Pirouz Sohi

Critical thickness and strain relaxation of c-plane GaN layers grown by molecular beam epitaxy on AlN were studied as a function of growth temperature and threading dislocation density (TDD). For this purpose we used AlN/sapphire templates and AlN single c ...

2017

Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

Design considerations and performance of n(++) GaN/InAlN/AlN/GaN normally off high-electron mobility transistors (HEMTs) are analyzed. Selective and damage-free dry etching of the gate recess through the GaN cap down to a 1-nm-thick InAlN barrier secures p ...

2010

Strong electric field and nonuniformity effects in GaN/AlN quantum dots revealed by high pressure studies

Nicolas Grandjean

The photoluminescence (PL) from GaN quantum dots (QDs) embedded in AlN has been investigated under hydrostatic pressure. The measured pressure coefficient of emitted light energy [dE(E)/dP] shows a negative value, in contrast with the positive pressure coe ...

2006

Probing exciton density of states through phonon-assisted emission in GaN epilayers: A and B exciton contributions

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté

A detailed experimental investigation of the phonon-assisted emission in a high-quality c-plane GaN epilayer is presented up to 200 K. By performing photoluminescence and reflectivity measurements, we find important etaloning effects in the phonon-replica ...

2010

Doubly resonant second-harmonic generation of a vortex beam from a bound state in the continuum

Nicolas Grandjean, Romuald Houdré, Jean-François Carlin, Matteo Galli, Momchil Minkov, Marco Clementi, Jun Wang

Second-harmonic generation in nonlinear materials can be greatly enhanced by realizing doubly resonant cavities with high quality factors. However, fulfilling such doubly resonant condition in photonic crystal (PhC) slab cavities is a long-standing challen ...

2020

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

We report on lattice-matched InAlN/GaN MOSHEMTs with an oxide-filled recess, self-aligned to the gate prepared by thermal oxidation at 800 degrees C in oxygen atmosphere. The device delivered a maximum current density of 2.4 A/mm. Pulse measurements showed ...

Institute of Electrical and Electronics Engineers2009

Multi-octave bandwidth supercontinuum generation in crystalline Aluminum Nitride-on-sapphire waveguides

Nicolas Grandjean, Camille Sophie Brès, Jean-François Carlin, Raphaël Butté, Samantha Sbarra, Samuele Brunetta

Applications such as optical clocks, gas spectroscopy, and optical coherent tomography stand to benefit significantly from the integration of on-chip supercontinuum sources. Materials exhibiting both second- and third-order nonlinearities are particularly ...

International Society for Optical Engineering2025

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir, Mehran Shahmohammadi, Etienne François Olivier Giraud

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature ra ...

Japan Society of Applied Physics2013

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

Nicolas Grandjean, Jean-François Carlin

We have investigated an inductively coupled plasma etching recipe using SiCl4 and SF6 with a resulting selectivity >10 for GaN in respect to InAlN. The formation of an etch-resistant layer of AlF3 on InAlN required about 1 min and was noticed by a 4-times- ...

2010

Smooth GaN membranes by polarization-assisted electrochemical etching

Nicolas Grandjean, Jean-François Carlin, Joachim Armand Simonne Ciers

III-nitride membranes offer promising perspectives and improved device designs in photonics, electronics, and optomechanics. However, the removal of the growth substrate often leads to a rough membrane surface, which increases scattering losses in optical ...

AMER INST PHYSICS2021

Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Camille Haller

The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the h ...

ELSEVIER SCIENCE SA2020

Fabrication defects and grating couplers in III-nitride photonic crystal nanobeam lasers (Conference Presentation)

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Ian Michael Rousseau

We report a numerical and experimental investigation of fabrication tolerances and outcoupling in optically pumped III-nitride nanolasers operating near lambda = 460 nm, in which feedback is provided by a one-dimensional photonic crystal nanobeam cavity an ...

Spie-Int Soc Optical Engineering2016

Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni

We measure the modal absorption coefficient of the InGaN quantum wells (QWs) in the absorber section of (Al,In)GaN multisection laser diodes as a function of bias voltage and photon energy using optical gain-spectroscopy. In the examined laser diodes, the ...

AIP American Institute of Physics2010

Continuous Wave Blue Lasing in III-Nitride Nanobeam Cavity on Silicon

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Noelia Vico Triviño

IIIV photonics on silicon is an active and promising research area. Here, we demonstrate room-temperature (RT) lasing in short-wavelength III-nitride photonic crystal nanobeam cavities grown on silicon featuring a single InGaN quantum well (QW). In the low ...

Amer Chemical Soc2015

III-N Optoelectronic Devices: Understanding the Physics of Electro-Optical Degradation

Nicolas Grandjean, Jean-François Carlin, Camille Haller

III-N optoelectronic devices are of great interest for many applications. Visible emitters (based on InGaN) are widely used in the lighting, display and automotive fields. Ultraviolet LEDs (based on AlGaN) are expected to be widely used for disinfection, m ...

SPIE2023

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

Nicolas Grandjean, Jean-François Carlin, Camille Haller

We investigate the density of defects and the degradation rate in InGaN light-emitting diodes having identical dislocation density and epitaxial structure, but different indium content in the quantum well (QW; 12%, 16%, 20%). Our results, based on combined ...

IOP PUBLISHING LTD2021

Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Jacques Levrat, Gatien Cosendey, Georg Rossbach, Marlene Glauser

A 3 lambda/2 (In,Ga)N/GaN resonant cavity, designed for similar to 415nm operation, is grown by molecular beam epitaxy and is sandwiched between a 39.5-period (In,Al)N/GaN distributed Bragg reflector (DBR), grown on c-plane GaN-on-sapphire pseudo-substrate ...

Amer Inst Physics2013

Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté

Thermal healing of focused ion beam-implanted defects in GaN is investigated by off-axis electron holography in TEM. The data reveal that healing starts at temperatures as low as about 250 degrees C. The healing processes result in an irreversible transiti ...

Iop Publishing Ltd2024