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Nicolas Grandjean

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Publications associées (249)

Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Yi Wang

We present a methodology to quantify polarization and electron affinity changes at interfaces by combining scanning tunneling spectroscopy, off-axis electron holography in transmission electron microscopy (TEM), and self-consistent calculations of the elec ...

AMER PHYSICAL SOC2020

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Mauro Mosca, Camille Haller

The electrical properties, electroluminescence (EL) power output and deep trap spectra were studied before and after 5 MeV electron irradiation of near-UV single-quantum-well (SQW) light-emitting diodes (LED) structures differing by the presence or absence ...

IOP PUBLISHING LTD2020

Short cavity InGaN-based laser diodes with cavity length below 300 mu m

Jean-François Carlin, Denis Martin, Nicolas Grandjean, Raphaël Butté, Hua Zhang, Ching-Wen Shih

We report on a practical method for developing InGaN-based edge emitting laser diodes of cavity length down to 45 mu m. Samples consisting of one uncoated cleaved facet and one etched facet coated with a high-reflectivity (HR) dielectric distributed Bragg ...

2019

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Mauro Mosca, Camille Haller

Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previously sho ...

AMER INST PHYSICS2019

Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Jean-François Carlin, Nicolas Grandjean, Mauro Mosca, Pirouz Sohi, Yao Chen

We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (

IOP PUBLISHING LTD2019

InAlN underlaver for near ultraviolet InGaN based light emitting diodes

Jean-François Carlin, Nicolas Grandjean, Mauro Mosca, Camille Haller, Rolf Erni

We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhi ...

2019

Probing Alloy Formation Using Different Excitonic Species: The Particular Case of InGaN

Nicolas Grandjean, Raphaël Butté, Gordon Jens Callsen

Since the early 1960s, alloys are commonly grouped into two classes that feature either bound states in the band gap (I) or additional, nondiscrete band states (II). Consequently, one can observe either excitons bound to isoelectronic impurities or the typ ...

American Physical Society2019

Broadened Bandwidth Amplified Spontaneous Emission from Blue GaN-Based Short-Cavity Superluminescent Light-Emitting Diodes

Jean-François Carlin, Denis Martin, Nicolas Grandjean, Raphaël Butté, Hua Zhang, Ching-Wen Shih

We report broad bandwidth blue superluminescent light-emitting diodes (SLEDs) based on a short-cavity active region. The dependencies of amplified spontaneous emission (ASE) output power and gain bandwidth on cavity length were investigated in devices whos ...

2019

Probing alloy formation using different excitonic species: The particular case of InGaN

Nicolas Grandjean, Raphaël Butté, Gordon Jens Callsen

Since the 1960s, alloys are grouped into two classes, featuring bound states in the bandgap (I - GaP:N, ZnTe:O, etc.) or additional, non-discrete, band states (II - SiGe, GaAsP, InGaAs, etc.). Therefore, one can observe either a rich and informative zoo of ...

IEEE2019

Density control of GaN quantum dots on AlN single crystal

Nicolas Grandjean, Sebastian Pascal Tamariz Kaufmann, Gordon Jens Callsen

Full control over the density and emission properties of GaN quantum dots (QDs) should be feasible, provided that the growth proceeds in the Stranski-Krastanov (SK) growth mode. In this work, we derive the phase diagram for GaN QD formation on AlN by NH3-m ...

2019

Room temperature single photon emission from planar GaN/AlN quantum dot samples grown by MBE

Nicolas Grandjean, Sebastian Pascal Tamariz Kaufmann, Gordon Jens Callsen

We present an overview on the growth and the optical properties of GaN quantum dots (QDs) embedded in planar AlN grown on the following three different types of substrates: single AlN crystal, AlN on sapphire, and AIN on Si(111). QD density control over th ...

IEEE2019

A quantum optical study of thresholdless lasing features in high-beta nitride nanobeam cavities

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Noelia Vico Triviño, Ian Michael Rousseau, Gordon Jens Callsen

Nature Research2018

Alloy disorder limited mobility of InGaN two-dimensional electron gas

Jean-François Carlin, Nicolas Grandjean, Pirouz Sohi

AIP American Institute of Physics2018

Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography

Jean-François Carlin, Nicolas Grandjean, Etienne François Olivier Giraud

2018

Excited states of neutral donor bound excitons in GaN

Nicolas Grandjean, Raphaël Butté, Gordon Jens Callsen

2018

Impact of surface morphology on the properties of light emission in InGaN epilayers

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Lise Lahourcade

2018

Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Gwénolé Jean Jacopin, Ian Michael Rousseau, Gordon Jens Callsen

2018

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Marlene Glauser, Georg Rossbach, Lise Lahourcade, Gordon Jens Callsen

AIP American Institute of Physics2018

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Jean-François Carlin, Denis Martin, Nicolas Grandjean, Raphaël Butté, Camille Haller, Gwénolé Jean Jacopin, Wei Liu

Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the high ...

2018

AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range

Denis Martin, Nicolas Grandjean, Sebastian Pascal Tamariz Kaufmann

We present a comprehensive study of AlN growth on Si(111) substrate by gas source molecular beam epitaxy with ammonia as nitrogen precursor in the high temperature range. We first demonstrate that the observation of the silicon 7 x 7 surface reconstruction ...

Elsevier2017

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