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Nicolas Grandjean

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Publications associées (249)

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Jean-François Carlin, Nicolas Grandjean, Camille Haller

The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Jean-François Carlin, Nicolas Grandjean, Camille Haller

Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

Nicolas Grandjean, Raphaël Butté, Sebastian Pascal Tamariz Kaufmann, Johann Nicolaï Stachurski, Gordon Jens Callsen

Y III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/ AlN QDs for temperature ...

SPRINGERNATURE2022

Smooth GaN membranes by polarization-assisted electrochemical etching

Jean-François Carlin, Nicolas Grandjean, Joachim Armand Simonne Ciers

III-nitride membranes offer promising perspectives and improved device designs in photonics, electronics, and optomechanics. However, the removal of the growth substrate often leads to a rough membrane surface, which increases scattering losses in optical ...

AMER INST PHYSICS2021

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Duncan Thomas Lindsay Alexander, Wei Liu, Wei Liu, Thomas Fjord Kjaersgaard Weatherley

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QW ...

AMER CHEMICAL SOC2021

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

Jean-François Carlin, Nicolas Grandjean, Camille Haller

We investigate the density of defects and the degradation rate in InGaN light-emitting diodes having identical dislocation density and epitaxial structure, but different indium content in the quantum well (QW; 12%, 16%, 20%). Our results, based on combined ...

IOP PUBLISHING LTD2021

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

Nicolas Grandjean, Raphaël Butté, Sebastian Pascal Tamariz Kaufmann

c-plane GaN/AlN quantum dots (QDs) are promising zero-dimensional quantum nanostructures that exhibit single photon emission properties up to room temperature and even above. In this context, it is of prime interest to gain a deeper insight into the recomb ...

AMER INST PHYSICS2021

Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Joachim Armand Simonne Ciers, Davide Maria Di Paola

Ultrafast nonlinear photonics enables a host of applications in advanced on-chip spectroscopy and information processing. These rely on a strong intensity dependent (nonlinear) refractive index capable of modulating optical pulses on sub-picosecond timesca ...

Nature Research2021

GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface

Jean-François Carlin, Nicolas Grandjean, Wei Liu, Yao Chen

An indium-containing layer positioned underneath the InGaN/GaN quantum well (QW) active region is commonly used in high efficiency blue light-emitting diodes. Recent studies proposed that the role of this underlayer is to trap surface defects (SDs), which, ...

AIP Publishing2021

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Jean-François Carlin, Nicolas Grandjean, Camille Haller

Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensive inv ...

IOP PUBLISHING LTD2021

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

Jean-François Carlin, Nicolas Grandjean, Elison de Nazareth Matioli, Pirouz Sohi

In this study, we propose a novel, high-conductivity multi-channel heterostructure based on lattice-matched InAlN/GaN channels with modulation-doping-induced two-dimensional electron gases (2DEGs). To facilitate device processing, the channel period thickn ...

IOP PUBLISHING LTD2021

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

Jean-François Carlin, Nicolas Grandjean, Mauro Mosca, Camille Haller

Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL redu ...

IOP PUBLISHING LTD2021

Doubly resonant second-harmonic generation of a vortex beam from a bound state in the continuum

Jean-François Carlin, Romuald Houdré, Nicolas Grandjean, Matteo Galli, Momchil Minkov, Jun Wang, Marco Clementi

Second-harmonic generation in nonlinear materials can be greatly enhanced by realizing doubly resonant cavities with high quality factors. However, fulfilling such doubly resonant condition in photonic crystal (PhC) slab cavities is a long-standing challen ...

2020

Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Mauro Mosca, Camille Haller

The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the h ...

ELSEVIER SCIENCE SA2020

Efficient second harmonic generation in a doubly resonant photonic crystal cavity based on a bound state in the continuum

Jean-François Carlin, Romuald Houdré, Nicolas Grandjean, Matteo Galli, Jun Wang

Making use of bound states in the continuum, we present experimental results on efficient second harmonic generation in photonic crystal cavities supporting doubly-resonant modes. The second harmonic emission is a vortex beam with radial polarization and e ...

IEEE2020

III-nitride photonic cavities

Nicolas Grandjean, Raphaël Butté

Owing to their wide direct bandgap tenability, III-nitride (III-N) compound semiconductors have been proven instrumental in the development of blue light-emitting diodes that led to the so-called solid-state lighting revolution and blue laser diodes that a ...

WALTER DE GRUYTER GMBH2020

Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Joachim Armand Simonne Ciers, Gordon Jens Callsen

Polariton lasers are mostly based on planar cavities. Here we focus on an alternative configuration with slab waveguide modes strongly coupled to excitons confined in GaN/AlGaN quantum wells. We study experimentally and theoretically polariton relaxation a ...

2020

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

Nicolas Grandjean, Raphaël Butté, Sebastian Pascal Tamariz Kaufmann, Johann Nicolaï Stachurski, Kanako Shojiki, Gordon Jens Callsen

Quantum dots (QDs) based on III-nitride semi-conductors are promising for single photon emission at noncryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K with g((2)) (0) ...

AMER CHEMICAL SOC2020

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Yi Wang

Intrinsic and extrinsic pinning and passivation of ...

AMER INST PHYSICS2020

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Camille Haller, Yixing Chen, Gwénolé Jean Jacopin, Wei Liu, Thomas Fjord Kjaersgaard Weatherley

We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the SQW is controlled by tuning ...

AMER INST PHYSICS2020

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