Mihai Adrian Ionescu

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This paper presents a novel nanoscale platform based on vanadium dioxide (VO2) two-terminal devices shaped like nanowires (NWs). For the first time we report CMOS compatible VO2 two-terminal devices with little-to-no stochasticity in the absence of electro ...

This paper reports on the potential of RF-MEMS technology to improve and miniaturize new functions in Radar front end and antenna modules. The insertion of new MEMS components and subsystems, using RF-MEMS switches, filters and phase shifters, in radar front end are reported in this article and their characterization results are discussed.

Laterally vibrating-body double-gate MOSFET that shows a +30 dB signal increase compared to an identical resonator operating with pure capacitive detection is reported. The double-gate MOSFET is fabricated on SOI substrate with silicon film thickness of 1. ...

In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200MPa to 2GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures.

The presentation discusses Smart wearable sensors for improved Quality of Life.

We report optimized precise alignment of individual single-walled carbon nanotubes (SWCNTs) by the resist-assisted AC-dielectrophoresis (DEP) method. We can reproducibly control the alignment precision to sub-50 nm by customizing the critical DEP parameter ...

This work presents one of the first low power pH sensing microfluidic chip based on the heterogeneous integration of: (i) high-k FinFET sensors with liquid gate, (ii) miniaturized Ag/AgCl quasi-Reference Electrode and (iii) passive microfluidic. The integr ...

In the present work a punch-through impact ionization MOSFET (PIMOS) is presented, which exploits impact ionization in low-doped body-tied [Omega]- and tri-gate structures to obtain abrupt switching (3-10 mV/decade) combined with a hysteresis in the ID(VDS ...

In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron-hole bilayer tunnel field-effect transistor. We show that, analogous ...

In this work, the conformal mapping technique is applied to obtain an analytical closed form solution of the 2D Poisson’s equation for a double-gate Tunnel FET. The generated band profiles are accurate in all regions of device operation. Furthermore, the c ...

The working principle of an electromechanical resonator for mass sensing applications is based on monitoring the characteristic resonance frequency downshift due to the particles attachment on the surface of the device. Solid-Gap Vibrating-Body Field Effec ...

In this work, we evaluate the exploration of the Solar system by ad-hoc wireless sensor networks (WSN), i.e. networks where all nodes (either moving or stationary) can both provide and relay data. The two aspects of self-organization and localization are t ...

This work reports on the design, fabrication, and characterization of CMOS pixels for subretinal implants, which seems to be an effective way to recover visual capabilities in some types of blindness. Two possible approaches are presented for CMOS pixel im ...

The electron-hole bilayer tunnel field-effect transistor (EHBTFET) is an electronic switch that uses 2-D-2-D sub-band-to-sub-band tunneling (BTBT) between electron and hole inversion layers and shows significant subthermal swing over several decades of cur ...

Mihai Adrian Ionescu

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An Investigation of VO2 Nanowire Arrays for Integrated Sensing. From Non-Stochastic Nanowires to Stochastic Nanostructures

Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

Coulomb blockade in gate-all-around silicon nanowire MOSFETs

MEMS technology for Radar front end modules.

Laterally vibrating-body double gate MOSFET with improved signal detection

Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

Wearable Sensors for medical applications

Hybrid Nanowire-MOS circuit architectures: from basic physics to digital and analog applications

Antibodies fragments as enablers of cardiac troponin (cTn) detection with extended gate metal-oxide-semiconductor field effect transistors (EGFET)

Precise Alignment of Individual Carbon Nanotubes for Nanoelectronics

Heterogeneous Integration of Low Power pH FinFET sensors with Passive Capillary Microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode

Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance

Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor

Design, Fabrication and Characterization of Terahertz Reflectarrays Based on a Silicon Substrate

Conformal Mapping Based DC Current Model For Double Gate Tunnel FETs

Solid-gap wine-glass mode disks VB-FET resonators applied to biomass sensing

Ad-Hoc Wireless Sensor Networks For Exploration Of Solar-System Bodies

CMOS pixels for subretinal implantable prothesis

Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET