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Mihai Adrian Ionescu

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Publications associées (403)

MEMS Capacitive Pressure Sensor Based on Polysilicon Sealed Membrane

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

This paper presents a pressure sensor based on a variable capacitor formed by a movable polysilicon sealed membrane sensitive to pressure. When operated as a pressure sensor two operation regions are observed, an exponentially sensitivity region at low pre ...

2006

Small-Signal Partitioning Scheme in Lateral Asymmetric MOSFET

Michel Declercq, Christian Enz, Jean-Michel Sallese, Mihai Adrian Ionescu

2006

Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance

Mihai Adrian Ionescu, Kirsten Emilie Moselund

2006

Partitioning Schemes in the Lateral Asymmetric MOST

Michel Declercq, Christian Enz, Jean-Michel Sallese, Mihai Adrian Ionescu, Ananda Sankar Roy, Yogesh Singh Chauhan

Lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the core of high voltage MOSFET. Recently it has been recognized that capacitance property of this kind of device is fundamentally different from conventional MOST becaus ...

2006

A New Charge based EKV Compact Model for Lateral Asymmetric MOSFET

Michel Declercq, François Krummenacher, Mihai Adrian Ionescu, Costin Anghel, Yogesh Singh Chauhan

2006

Nano-scale ICT devices and systems

Mihai Adrian Ionescu

2006

Low temperature single electron characteristics in gate-all-around MOSFET

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

2006

New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurement

Mihai Adrian Ionescu, Costin Anghel, Yogesh Singh Chauhan

Institute of Electrical and Electronics Engineers2006

A new charge-based Compact Model for Lateral Asymmetric MOSFET

Michel Declercq, François Krummenacher, Mihai Adrian Ionescu, Costin Anghel, Yogesh Singh Chauhan

2006

MEMS Tunable Capacitor with laterally driven fragmented electrodes and electro-thermal actuation

Mihai Adrian Ionescu, Alexander Mehdaoui, Dimitrios Tsamados

2006

A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor

Michel Declercq, François Krummenacher, Mihai Adrian Ionescu, Costin Anghel, Yogesh Singh Chauhan

2006

Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling

Didier Bouvet, Romuald Houdré, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Christoph Eggimann, Nicolas Le Thomas

2006

Compact gate-all-around silicon light modulator for ultra high speed operation

Michel Declercq, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Matthieu Bopp

2006

Double gate tunnel FET with ultrathin silicon body and high-k dielectric

Mihai Adrian Ionescu, Katherine Boucart

2006

Hybrid CMOS - Single Electron Transistor Circuits: Promise or Dream

Mihai Adrian Ionescu

2006

Vertical co-integration of AlSi MEMS tunable capacitors and Cu inductors for tunable LC blocks

Raphaël Fritschi, Mihai Adrian Ionescu, Alexander Mehdaoui

2006

Electrical conduction in 10 nm thin polysilicon wires from 4 to 400 K and their operation for hybrid memory

Didier Bouvet, Serge Ecoffey, Mihai Adrian Ionescu, Santanu Mahapatra

2006

Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Georges-André Racine, Nicolas Abelé, Montserrat Fernandez-Bolanos Badia

This paper reports on the fabrication and electrical characterization of a novel pressure sensor based on a suspended-gate MOSFET (SG-MOSFET) using a new polyimide process. The device is composed of a SG-MOSFET built on a thin SOI membrane released by a ba ...

Elsevier2006

Nano-gap MEMS resonators and adapted oscillator design

Anja Skrivervik, Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Marco Mazza

2006

Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

Luc Thévenaz, Mihai Adrian Ionescu, Kirsten Emilie Moselund

We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices. ...

IEEE2006

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