Mihai Adrian Ionescu

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In this work, we report the concept and experimentally demonstrate the first tunable ferroelectric (Fe) junctionless (JL) transistor (Fe-JLFET), capable of emulating the functionality of biological tri-partite synapses, which is an artificial three-termina ...

The Smith chart was primarily developed, extended, and refined by Phillip Hagar Smith [1] in a series of works published [2]-[4] between 1939 and 1969. Smith was born in Lexington, Massachusetts, in 1905. He majored in electrical communications at Tufts Un ...

This work describes the geometry behind the Smith chart, recent 3D Smith chart tool and previously reported conceptual Hyperbolic Smith chart. We present the geometrical properties of the transformations used in creating them by means of inversive geometry ...

A self-limiting dielectrophoresis technique, aimed at deterministically assembling individual or bundles of single-walled carbon nanotubes (SWCNTs) and multiwalled carbon nanotubes (MWCNTs), is experimentally investigated. A limiting resistor is used to control the electric field after the deposition of a single carbon nanotube. The role of some key parameters such as voltage and duration of the deposition with and without the limiting resistor is studied.

An on-body wearable bio-fluid collection and sensing device including an interface or interface surface comprising at least one biocompatible material for contacting a bodily part; at least one inlet for receiving the bio-fluid, at least one outlet for eva ...

We report, for the first time, self-assembled cantilever and clamped-clamped tri-state carbon nanotube (T-CNT) nano-electro-mechanical (NEM) switches with sub-100 nm air-gap dual lateral gates. Unlike conventional bi-state CNT switches, the T-CNT NEM switc ...

This paper presents a process for the co-fabrication of self-aligned NMOS and single electron transistors made by gated polysilicon wires. The realization of SET–MOS hybrid architectures is also reported. The proposed process exploits an original low energ ...

In this work a non-local band-to-band tunnelling model has been implemented into a full-band Monte Carlo simulator. Two different approaches for the choice of the tunnelling path have been implemented and their impact on the transfer characteristics of dif ...

A tunnel field effect transistor (TFET), including a source region, a gate region, a channel region, and a drain region, the gate region including a gate stack, wherein an area of the source region that is facing the channel region is overlapped by the gat ...

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of Ion, gm, and overdrive are a ...

Mihai Adrian Ionescu

Chattez avec Graph Search

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

The 3D Smith Chart: From Theory to Experimental Reality

A Review and Mathematical Treatment of Infinity on the Smith Chart, 3D Smith Chart and Hyperbolic Smith Chart

A Study of Deterministic Positioning of Carbon Nanotubes by Dielectrophoresis

Capillary flow device for bio-fluid collection with semiconductor sensors

Organic half-wave rectifier fabricated by stencil lithography on flexible substrate

Gate-all-around MOSFETs: true fabrication and characteristics

Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits

A hybrid CMOS-SET co-fabrication platform using nano-grain polysilicon wires

Large-Scale Assembly of Tunable Resonant-Body Carbon Nanotube Transistors without Hysteresis

Low temperature single electron characteristics in gate-all-around MOSFET

Tunneling path impact on semi-classical numerical simulations of TFET devices

Hybrid CMOS - Single Electron Transistor Circuits: Promise or Dream

Capillary flow device for bio-fluid collection with semiconductor sensors

Silicon nanowires patterning by sidewall and nano-oxidation processing

Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling

Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing

Three-level Stencil Alignment Fabrication of a High-k Gate Stack Organic Thin Film Transistor

Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots (Adv. Funct. Mater. 14/2025)

Suspended-Gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor