Jean-François Carlin, Nicolas Grandjean, Marco Malinverni, Lorenzo Lugani
We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum output power density of 1.35 W/mm and peak power-added-efficiency of 12% are ...
Institute of Electrical and Electronics Engineers2015