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Mihai Adrian Ionescu

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Publications associées (403)

Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory

Didier Bouvet, Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Livio Lattanzio

The performance of a standard MOSFET degrades with the increase in temperature, impacting the power consumption of the device. In this paper, we report the opposite trend, which is reflected in an improvement of main performance factors in ferroelectric FE ...

2011

Tunnel field-effect transistors as energy-efficient electronic switches

Mihai Adrian Ionescu, Heike Riel

Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to inc ...

2011

Corner Effect and Local Volume Inversion in SiNW FETs

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Luca Selmi

In this paper, a quantitative study of the corner effect and of the local volume inversion on gate-all-around MOSFETs based on numerical simulations has been carried out; different angles and doping levels are compared, in order to understand the impact of ...

Institute of Electrical and Electronics Engineers2011

SWNT array resonant gate MOS transistor

Mihai Adrian Ionescu, Anupama Arun

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and e ...

2011

A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Arnab Biswas

This letter proposes a hybrid abrupt switch principle and a corresponding device architecture that combines quantum mechanical band-to-band and barrier tunneling mechanisms. The device overcomes the intrinsically low on-current (I-ON) of conventional tunne ...

AIP American Institute of Physics2011

Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography

Mihai Adrian Ionescu, Jürgen Brugger, Dimitrios Tsamados, Katrin Sidler Arnet, Andreea Veronica Savu, Nenad Cvetkovic

This paper presents new results on miniaturized organic thin film transistors (TFT) fabricated on a spin coated polyimide (PI) film. Patterning steps, that are vital for the integrity and electrical performances of the organic TFT, were performed using res ...

Elsevier2010

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

Didier Bouvet, Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Livio Lattanzio

Interest in Ferroelectric FETs originates from their potential as non-volatile memories and, more recently, as abrupt switches. In this work, we focus on the role of the Curie temperature of the gate stack on the performance of Fe-FETs. The proposed study ...

IEEE2010

Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Arnab Biswas

We report a simulation-based study of an all-silicon novel device which exploits internally combined quantum mechanical band-to-band and barrier tunneling mechanisms to overcome the intrinsic low current drive limitations of conventional silicon Tunnel FET ...

2010

Asymmetrically strained all-silicon multi-gate n-Tunnel FETs

Mihai Adrian Ionescu, Katherine Boucart, Mohammad Najmzadeh, Walter Riess

This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at least 0.2 eV band-gap shrinkage at the B ...

Elsevier2010

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Arnab Biswas

We report a novel device which exploits the internally combined quantum mechanical Band-To-Band and Barrier Tunneling mechanisms to achieve improved performances and overcome the intrinsic low current drive limitations of conventional Tunnel FETs and the 6 ...

IEEE2010

Non-hysteretic ferroelectric tunnel FET with improved conductance at Curie temperature

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Livio Lattanzio

Tunnel FETs (TFETs) have attracted much interest in the last decade for their potential to be used as small slope switches, suitable for future logic circuits operating with a supply voltage smaller than 0.5 V and for reduced Ioff levels. It has been shown ...

IEEE2010

Regional, National, and International Nanoelectronics Research Programs: Topical Concentration and Gaps

Mihai Adrian Ionescu

This paperwill outline some results obtained by an international working group on nanoelectronics, which collects data from major publicly funded programs in Europe, Japan, and the United States on long-term nanoelectronics research. It maps these programs ...

2010

Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance

Catherine Dehollain, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

This paper presents a novel high-frequency tunable band-stop filter concept based on a single MEMS capacitive shunt device which uses meander arm anchoring inductors and with a total size of 300 × 600 μm. Tuning ranges of the central frequency in the order ...

Elsevier2010

Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

Didier Bouvet, Mihai Adrian Ionescu, Luca De Michielis, Mohammad Najmzadeh

In this work we present for the first time correlation of lateral uniaxial tensile strain and I–V characteristics of GAA Si NW n-MOSFET, all measured on the same device. Micro-Raman spectroscopy is employed for direct strain measurement on devices to explo ...

Elsevier2010

Capacitive nanoelectromechanical switch based on suspended carbon nanotube array

Didier Bouvet, László Forró, Mihai Adrian Ionescu, Arnaud Magrez, Donatello Acquaviva, Anupama Arun, Rita Smajda

We present the fabrication and high frequency characterization of a capacitive nanoelectromechanical system (NEMS) switch using a dense array of horizontally aligned single-wall carbon nanotubes (CNTs). The nanotubes are directly grown onto metal layers wi ...

American Institute of Physics2010

Electrical modeling and design of a wafer-level package for MEM resonators

Anja Skrivervik, Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Marco Mazza

This paper presents the electrical design and characterization of a wafer-level, or 0-level, package for micro-electromechanical resonators. We start by identifying the requirements on the electrical parasitics of a packaged resonator, derived from an anal ...

Institute of Electrical and Electronics Engineers2010

The high-mobility bended n-channel silicon nanowire transistor

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Mohammad Najmzadeh

This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire channel and reports on the resulting improvement in device performance. The variation in strain measur ...

Institute of Electrical and Electronics Engineers2010

Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Donatello Acquaviva, Anupama Arun

In this work, tunable MEMS capacitors are realized using a vertically grown carbon nanotube array. The vertical CNT array forms an effective CNT membrane, which can be electrostatically actuated like the conventional metal plates used in MEMS capacitors. T ...

2010

Three-level Stencil Alignment Fabrication of a High-k Gate Stack Organic Thin Film Transistor

Mihai Adrian Ionescu, Jürgen Brugger, Dimitrios Tsamados, Katrin Sidler Arnet, Andreea Veronica Savu, Nenad Cvetkovic

2010

Active multi gate micro-electro-mechanical device with built-in transistor

Mihai Adrian Ionescu, Daniel Grogg

The present invention exploits the combination of the amplification, provided by the integration of a FET (or any other three terminal active device), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with built-in transis ...

2010

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