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Mihai Adrian Ionescu

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Publications associées (403)

Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

In this paper we present a novel device, the Germanium Electron-Hole Bilayer Tunnel FET (Ge EHBTFET), which exploits carrier tunneling through a bias-induced electron-hole bilayer. The proposed architecture provides a quasi-ideal alignment between the tunn ...

Institute of Electrical and Electronics Engineers2012

Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain

Didier Bouvet, Jean-Michel Sallese, Mihai Adrian Ionescu, Wladyslaw Grabinski, Mohammad Najmzadeh

In this work we report dense arrays of accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-sections in a highly doped regime. The integration of local stressor technologies (both local oxidation and metal-gate strain) to achieve ⩾2.5 ...

Elsevier2012

Large-Scale Assembly of Tunable Resonant-Body Carbon Nanotube Transistors without Hysteresis

Mihai Adrian Ionescu, Ji Cao, Sebastian Thimotee Bartsch

2012

Vertically stacked Si nanostructures for biosensing applications

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez

High density (7-10 NW/μm) SiNW arrays of up to 16 nanowires vertically stacked with diameter widths below 20 nm have been successfully fabricated to create highly sensitive 3D FETs for biosensing applications. In order to take advantage of the increased se ...

Elsevier2012

Precise Alignment of Individual Carbon Nanotubes for Nanoelectronics

Mihai Adrian Ionescu, Ji Cao

We report optimized precise alignment of individual single-walled carbon nanotubes (SWCNTs) by the resist-assisted AC-dielectrophoresis (DEP) method. We can reproducibly control the alignment precision to sub-50 nm by customizing the critical DEP parameter ...

IEEE2012

Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices

Mihai Adrian Ionescu, Luca De Michielis, Luca Selmi, Pierpaolo Palestri

In this work a non-local band-to-band tunnelling model has been successfully implemented into a fullband Monte Carlo simulator and applied to Tunnel-FET devices. No stability or statistical noise problems were encountered in spite of particle weights rangi ...

Elsevier2011

Carbon Nanotube Crossed Junction by Two Step Dielectrophoresis

Mihai Adrian Ionescu, Anupama Arun

The crossed junction formed between a multi walled carbon nanotube (MWCNT) and a bundle of single walled carbon nanotube (SWCNT) is investigated. The junction is fabricated by orthogonally assembling the MWCNT and SWCNT by a two-step dielectrophoresis proc ...

2011

Tunneling path impact on semi-classical numerical simulations of TFET devices

Mihai Adrian Ionescu, Luca De Michielis, Luca Selmi, Pierpaolo Palestri

In this work a non-local band-to-band tunnelling model has been implemented into a full-band Monte Carlo simulator. Two different approaches for the choice of the tunnelling path have been implemented and their impact on the transfer characteristics of dif ...

IEEE2011

High aspect ratio sub-micron trenches on silicon-on-insulator and bulk silicon

Mihai Adrian Ionescu, Daniel Grogg, Cyrille Hibert, Marion Hermersdorf

This paper reports on the fabrication of sub-micron trenches on silicon-on-insulator (SOI) required in many MEMS devices and on bulk silicon. Trenches in the range of 100-500 nm had been etched with the deep reactive ion etching (DRIE) by using the SHARP ( ...

2011

FinFET for high sensitivity ion and biological sensing applications

Mihai Adrian Ionescu, Livio Lattanzio, Sara Rigante

A double-gate (DG) fin field effect transistor (FinFET) is discussed as new label-free ion and biological sensor. Simulations as function of channel doping, geometrical dimensions, operation point and materials investigated the device response to an extern ...

2011

Integration for All Configurations

Mihai Adrian Ionescu

Since their discovery in 1991 [1], carbon nano-tubes (CNTs), have been considered among the most promising materials for logic nanodevices, interconnects and nanoelectromechanical systems (NEMS). They have remarkably unique mechanical (Youngs modulus up to ...

2011

Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Luca Selmi, Pierpaolo Palestri

The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism [1]. The OFF-ON transition can be much more abrupt than for conventional MOSFETs, thus ...

IEEE2011

The Vibrating Body Transistor

Mihai Adrian Ionescu, Daniel Grogg

This paper presents a hybrid resonator architecture called the vibrating body field-effect transistor (VB-FET), which combines a silicon microelectromechanical (MEM) resonator and a FET in a single device. The active device provides improved motion sensing ...

2011

Self-Aligned Double-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect-Transistors

Mihai Adrian Ionescu, Ji Cao

2011

Ultra low power: Emerging devices and their benefits for integrated circuits

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Luca De Michielis, Alexandru Rusu, Nilay Dagtekin, Ji Cao, Sebastian Thimotee Bartsch

In this paper we analyze and discuss the characteristics and expected benefits of some emerging device categories for ultra low power integrated circuits. First, we focus on two categories of sub-thermal subthreshold swing switches Tunnel FETs and Negative ...

IEEE2011

A Microfabricated 1-D Metamaterial Unit Cell Matched From DC to Millimeter-Waves

Frédéric Bongard, Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

A silicon-integrated one-dimensional CRLH-TL metamaterial unit cell is presented. Ultra broadband behavior is achieved by implementing the previously proposed 'lattice network' CRLH-TL unit cell in a monolayer host transmission line, as required for simple ...

Institution of Engineering and Technology2011

Floating-potential self-assembly of singe-walled carbon nanotube field effect transistors by ac-dielectrophoresis

Mihai Adrian Ionescu, Anupama Arun, Ji Cao

An improved method for self-assembly fabrication of single-walled carbon nanotube (SWCNT) field effect transistors (FETs) is presented, combining the unique design of biased/floating potential electrode geometry and the technique of aligning CNTs by pre-de ...

2011

Horizontally and on-site grown carbon nanotube membrane for sensitive and selective gas sensing

Mihai Adrian Ionescu, Dimitrios Tsamados, Hoël Maxime Guérin

We report here the fabrication of a sensitive and selective gas sensor using a carbon nanotube (CNT) membrane as the gas sensing transducer. A TiN/Al2O3/TiN stack is used as a support for the CNT growth catalyst, evaporated with a 45° tilt angle on the ver ...

2011

Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel Tunnel field-effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron-hole bilayer in order to achieve improved switching and higher driv ...

IEEE2011

Numerical analysis of zeptogram/Hz-level mass responsivity for in-plane resonant nano-electro-mechanical sensors

Mihai Adrian Ionescu, Dimitrios Tsamados

This paper presents numerical analysis of an in-plane resonant nano-electro-mechanical (NEM) sensor based on mass-detection principle using a 3D FEM electromechanical simulation combined with a NEM/MOS hybrid circuit simulation. The self-assembled linker m ...

2011

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