Mihai Adrian Ionescu

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An analytical model for the suspended-gate field-effect transistor (SGFET), dedicated to the dc analysis of SGFET logic circuits, is developed. The model is based on the depletion approximation and expresses the pull-in voltage, the pull-out voltage, and t ...

The low-power sensing platform proposed by the Convergence project is foreseen as a wireless, low-power and multifunctional wearable system empowered by energy-efficient technologies. This will allow meeting the strict demands of life-style and healthcare ...

Wearable systems could offer noninvasive and real-time solutions for monitoring of biomarkers in human sweat as an alternative to blood testing. Recent studies have demonstrated that the concentration of certain biomarkers in sweat can be directly correlat ...

A 9.4MHz micro-electromechanical oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) is presented in this work. The tuning fork VB-FET used in this work provides a high quality factor of 9400 in the open-loop configuration and a low equiv ...

Since their discovery in 1991 [1], carbon nano-tubes (CNTs), have been considered among the most promising materials for logic nanodevices, interconnects and nanoelectromechanical systems (NEMS). They have remarkably unique mechanical (Youngs modulus up to ...

In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ~400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.

We demonstrate that fine-pitch TSV technology can be exploited to fabricate micro-inductors on high resistivity substrate, with record-high inductance per area and preserving their performance at GHz frequencies. We report an extensive experimental study o ...

In this work we present an ultra-high-frequency (UHF) single crystal silicon ring resonator with two embedded FETs. Electromechanical coupling is realized through a high-K, namely 10 nm HfO2, dielectric solid-gap sandwiched between the gate electrode and the ring lateral surface. The higher permittivity of the solid-gap material as well as the technological possibility of having narrower gap than air-gap counterparts, will uniquely allow to improve at the same time the electromechanical coupling and the FET

This paper presents, for the first time, experimental evidence on resonant-body Fin-FETs (RB-FinFET) with two independent lateral gates, operated from weak to strong inversion, which enables unique trade-off between power consumption and gain. Resonance frequencies from 25 MHz to 80 MHz with quality factors of the order of 3000 and motional resistances of the order of tens of kOhm are demonstrated with a mixer mode measurement technique, dedicated to ultra-scaled resonators. The power consumption of the act

The article firstly proves that the constant quality factor (Q) contours for passive circuits, while represented on a 2D Smith chart, form circle arcs on a coaxal circle family. Furthermore, these circle arcs represent semi-circles families in the north he ...

In this work, we investigate vertically aligned carbon nanotube (CNT) membranes as building blocks to realize electrostatically actuated micro-electro-mechanical-systems (M EMS). The fabricated CNT dense arrays are grown on adjacent metal electrodes and can be actuated by applying a DC bias. The conductive membranes deflect when actuated and a clear pull-in is observed, as in any conventional MEM device using metal parallel plates. The Young's modulus of these membranes extracted from the pull-in voltage is

Ion sensitive field effect transistors (ISFETs) form a very attractive solution for wearable sensors due to their capacity for ultra-miniaturization, low power operation, and very high sensitivity, supported by complementary metal oxide semiconductor (CMOS ...

This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a ...

This paper reports the low power operation of Vibrating Body Field Effect Transistors as active resonators for communication applications. For the first time we report active resonators operating at 2MHz and 20MHz with power consumption less than 100μW and Quality factors in the order of 3000. This performance opens new applications of devices for wireless sensor networks. ©2009 IEEE.

This paper reports on the potential of RF-MEMS technology based on aluminum nitride capacitive dielectric and nickelsuspended membranes to provide RF circuit functions in reconfigurable front-end radios. The RF performance of capacitive switches, distributed MEMS transmission lines (DMTLs) phase shifters for beam steering and tunable filters, including center frequency and bandwidth tuning of bandpass and band-stop filters are presented. Detailed characterization based on S-parameter data demonstrates very

The paper presents the carbon nanotubes (CNTs) alignment and length dependence with respect to the catalyst pattern design, the fabrication of a CNT MEM switch, nanomanipulating a CNT array by FIB and the electrical characterization of the device to evaluate the electrical and mechanical properties of the CNT membrane. The catalyst design permits to obtain, during the same growth process, both vertical and horizontal aligned nanotubes. The high density guaranties to the CNT mat to act as a compact and flexi

This paper reports for the first time, smart 3D-Extended-Metal-Gate Ion-Sensitive-Field-Effect-Transistors (3D-EMG-ISFETs), with unique figures of merit: (i) extremely-low-power (down to a record value of 2 pW per sensor under excellent linearity), (ii) al ...

In this paper, we report, for the first time, corner effect analysis in the gate-all-around equilateral triangular silicon nanowire (NW) junctionless (JL) nMOSFETs, from subthreshold to strong accumulation regime. Corners were found to accumulate and deple ...

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

In this paper we present a novel device, the Germanium Electron-Hole Bilayer Tunnel FET (Ge EHBTFET), which exploits carrier tunneling through a bias-induced electron-hole bilayer. The proposed architecture provides a quasi-ideal alignment between the tunn ...

Mihai Adrian Ionescu

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Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

A Wearable Low-Power Sensing Platform for Environmental and Health Monitoring: The Convergence Project

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

9 MHz vibrating body FET tuning fork oscillator

Integration for All Configurations

Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs

Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors

Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor

Resonant-Body Fin-FETs with sub-nW power consumption

3D Smith chart constant quality factor semi-circles contours for positive and negative resistance circuits

Carbon nanotube vertical membranes for electrostatically actuated micro-electro-mechanical devices

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Sub-100μW low power operation of vibrating body FETs

RF-MEMS switches with AlN dielectric and their applications

Micro-Electro-Mechanical Switch Based on Suspended Horizontal Dense Mat of CNTs by FIB Nanomanipulation

All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing

Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation