Mihai Adrian Ionescu

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We propose and characterize graphene quantum capacitors, tunable with voltage by the control of their charge density, for tunable LC tanks as essential building blocks for Radio-Frequency (RF) functions in densely integrated circuits. We fabricate and inve ...

In this paper, we report the basic design conditions and the experimental confirmation of a temperature dependent negative capacitance (NC) effect in a ferroelectric field-effect-transistor (Fe-FET). We find that the internal voltage amplification peaks of ...

In this comment we demonstrate that the inclusion of field--induced quantum confinement effects through appropriate discretization of conduction and valence bands refutes the suitability of a germanium electron--hole bilayer tunnel field-effect transistor ...

This work reports a detailed experimental investigation of the slope of the current switching between OFF and ON states exploiting the metal-insulator-transition in vanadium dioxide devices. The reported devices are CMOS compatible 2-terminal switches. We experimentally demonstrate for the first time the very little dependence on temperature of the steep slope of these switches, ranging from 0.24 mV/decade at room temperature, to 0.38 mV/decade at 50°C. The fabricated devices show excellent on-state conduct

High density (7-10 NW/μm) SiNW arrays of up to 16 nanowires vertically stacked with diameter widths below 20 nm have been successfully fabricated to create highly sensitive 3D FETs for biosensing applications. In order to take advantage of the increased se ...

A novel fabrication process for the integration of Field Effect Transistors in electrostatically actuated bulk acoustic resonators is demonstrated. ALD-deposited HfO2 is used as a high-k dielectric for the FET and as an etch-stop layer during the release of the resonator structure as well, enabling the creation of sub-100 nm air-gap resonators with FET amplification enhancement.

We establish insulator-to-metal transition (IMT) in Vanadium dioxide (VO2) by millimeter-wave (mm-wave) actuation, using two coupled dipole antennas: a simple one as a continuous mm-wave-source and the other one with an embedded VO2 part as an absorber. We ...

Vanadium dioxide thin films were deposited on amorphous SiO2-coated Si substrates, by reactive magnetron sputtering at 490 °C of a pure vanadium target. The deposition parameters were optimized in order to maximize the resistivity modulation due to the met ...

This work experimentally demonstrates negative capacitance MOSFETs in hysteretic and non-hysteretic modes of operation. A PZT capacitor is externally connected to the gate of commercial nMOSFETs fabricated in 28nm CMOS technology to explore the negative ca ...

This paper reports the successful experimental demonstration of the localized growth of horizontal, dense carbon nanotube (CNT) arrays in situ and at the wafer scale. The selectivity and directionality of the CNT catalytic growth process along with the ade ...

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of the Schrodinger and Poisson equations, using the Finite Element Method followed by tunneling current (direct and phonon assisted) calculation in post-processing. ...

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of Ion, gm, and overdrive are analyzed and explained by most effective reduction of body factor, m < 1, especially for VG>VT, which greatly amplify the control on the surface potential TFET, which dictates a highly non-linear BTBT regime. We achieve a full non-hysteretic negative-capaci

The present invention concerns a biosensor (1) for sensing stress hormone cortisol concentration in a biofluid (27). The biosensor (1) comprises: an electrical transistor transducer (3) comprising a transistor gate electrode (17); a sensing electrode eleme ...

This work reports on the physical definition and extraction of threshold voltage in Tunnel FETs (field effect transistors) based on numerical simulation data. It is shown that the Tunnel FET has the outstanding property of having two threshold voltages: on ...

This paper reports on the design and fabrication of a fully integrated antenna beam steering concept for wireless sensor nodes. The conformal array circumcises four cube faces with a silicon core mounted on each face. Every silicon core represents a 2 by 1 antenna array with an antenna element consisting of a dipole antenna, a balun, and a distributed MEMS phase shifter. All these components are based on a single wafer process and designed to work at 17.2 GHz. Simulations of the entire system and first resu

A polymer based Ferroelectric gate FET at 1T non-volatile memory on bulk silicon is demonstrated. Spin-coated 40 nm and 100 nm P(VDF-TrFE) (70%-30%) ultra-thin films have been integrated onto 10 nm SiO₂ layer as gate dielectric into a conventional silicon ...

The development of interconnections suitable for radio- frequency (RF) and millimeter-wave (mm-wave) applications is of foremost importance for the feasibility of high-quality substrate-integrated devices. For this purpose, we introduce and validate the te ...

This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/I off characteristics. We demonstrate that a lateral strain profile with a maximum of strain higher than 3GPa at the BTB source junction could act as an effective performance Tunnel FET enabling the cancelation of the drain threshold voltage. We study and report in detail the contributions of main technology boosters of all-silicon Tunnel FETs: (i) strained source, (ii) high-k gat

The NEREID project ("NanoElectronics Roadmap for Europe: Identification and Dissemination") is dedicated to mapping the future of European Nanoelectronics. NEREID's objective is to develop a medium and long term roadmap for the European nanoelectronics ind ...

In this letter, an abrupt NMOS inverter based on punch-through impact ionization is demonstrated for the first time. The slopes for both the rising and the falling edge of the ID(V GS) device characteristics are less than 10 mV/dec ...

Mihai Adrian Ionescu

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Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs

Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gale'

Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION

Vertically stacked Si nanostructures for biosensing applications

Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications

Millimeter-wave-triggering of insulator-to-metal transition in Vanadium dioxide

Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide

Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation

High-yield, in-situ fabrication and integration of horizontal carbon nanotube arrays at the wafer scale for robust ammonia sensors

Two dimensional quantum mechanical simulation of low dimensional tunneling devices

Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing

Extended-gate field-effect transistor with aptamer functionalisation layer for measuring hormone concentration in biofluids and corresponding fabrication method

A new definition of threshold voltage in Tunnel FETs

Miniature Sensor Node with Conformal Phased Array

Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory

Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications

Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation

NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration

Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics