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Jean-François Carlin

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Publications associées (189)

Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Mauro Mosca, Dobri Simeonov, Tiankai Zhu, Antonino Francesco Castiglia

The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering ga ...

2007

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Jean-François Carlin, Marcel Py, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Mauro Mosca, Dobri Simeonov, Gabriel Christmann, Antonino Francesco Castiglia, Marcus Gonschorek

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the g ...

2007

Strain relaxation of AlN epilayers Stranski-Krastanov GaN/AlN quantum dots grown by organic vapor phase epitaxy

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov

We report a study of self-assembled GaN/AlN quantum dots (QDs) grown by metalorganic vapor phase epitaxy. We have investigated the impact of the AlN template quality on the nucleation of QDs obtained by the so-called Stranski-Krastanov growth mode transiti ...

2007

Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

Jean-François Carlin, Marc Ilegems, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Mauro Mosca

Intersubband (lSB) optical absorption in different nitride-based heterostructures grown by metal-organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi-quantum wells (MQWs) is investigated. At high concentration (15%) ...

Wiley2007

Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Antonino Francesco Castiglia

Laser action with low threshold average pump power density (similar to 50 W. cm(-2)) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Br ...

2007

Strain-induced interface instability in GaN/AlN multiple quantum wells

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Sylvain Nicolay

It is shown that in GaN/AlN multiple quantum wells (MQWs), strain is a critical parameter for achieving short-wavelength intersubband transitions (ISBTs). This is investigated by comparing GaN/AlN MQWs grown by metal organic vapor phase epitaxy on either A ...

2007

Group iii nitride light-emitting devices having a polarization-doped region

Jean-François Carlin

A light-emitting device comprising a substrate-supported Group III nitride semiconductor region having a p-n junction region for injecting carriers into an optically active region, wherein the p-n junction region comprises an aluminum indium gallium nitrid ...

2006

Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Mauro Mosca, Gabriel Christmann

The authors report on the demonstration of strong light-matter coupling at room temperature using a crack-free UV microcavity containing GaN/AlGaN quantum wells (QWs). Lattice-matched AlInN/AlGaN distributed Bragg reflectors (DBRs) with a maximum peak refl ...

2006

Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Sylvain Nicolay

We report on intersubband absorption of near infrared radiation in AlN/GaN superlattice structures grown by metal-organic vapor-phase epitaxy. A good correlation between well thickness and absorption peak energy was obtained. One sample shows a photovoltai ...

2006

Crack-free highly reflective AlInN/AlGaN bragg mirrors for UV applications

Jean-François Carlin, Marc Ilegems, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

We report the growth of highly reflective distributed Bragg reflectors (DBRs) in the UV region using the Al0.85In0.15N/Al0.2Ga0.8N lattice-matched system. The DBRs were deposited on nearly strain-free Al0.2Ga0.8N templates to avoid strain-induced structura ...

2006

InAIN/GaN HEMTs: A first insight into technological optimization

Jean-François Carlin

High-electron mobility transistors (HEMTs) were fabricated from heterostructures consisting of undoped In0.2Al0.8N barrier and GaN channel layers grown by metal-organic vapor phase epitaxy on (0001) sapphire substrates. The polarization-induced two-dimensi ...

2006

High spatial resolution picosecond cathodoluminescence of InGaN quantum wells

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Andrea Crottini, Nicolas Grandjean, Eric Feltin

The authors have studied InxGa1-xN/GaN (x approximate to 15%) quantum wells (QWs) using atomic force microscopy (AFM) and picosecond time resolved cathodoluminescence (pTRCL) measurements. They observed a contrast inversion between monochromatic CL maps co ...

American Institute of Physics2006

Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

Jean-François Carlin, Marc Ilegems, Nicolas Grandjean, Eric Feltin, Sylvain Nicolay, Mauro Mosca

We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x ...

2006

High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Room temperature electron mobility of 1170 cm(2)/V s is obtained in an undoped, lattice-matched, Al0.82In0.18N/GaN field-effect transistor heterostructure, while keeping a high (2.6 +/- 0.3)x10(13) cm(-2) electron gas density intrinsic to the Al0.82In0.18N ...

2006

Small-signal characteristics of AlInN/GaN HEMTs

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Marcus Gonschorek

DC and RF measurements of an emerging AIInN/GaN high electron mobility transistor (HEMT) technology for power performances are reported. High electron transport properties in this structure attributed to the material quality are demonstrated. Indeed, in sp ...

2006

Room-temperature polariton luminescence from a bulk GaN microcavity

Jean-François Carlin, Marc Ilegems, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Mauro Mosca, Gabriel Christmann

We report strong exciton-photon coupling at room temperature in a hybrid high quality bulk 3 lambda/2 GaN cavity with a bottom lattice-matched AlInN/AlGaN distributed Bragg reflector through angle-resolved polarized photoluminescence (PL). Coupling of the ...

2006

Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy

Jean-François Carlin, Marc Ilegems, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov

We report a thorough study of the growth of self-assembled GaN/AlN quantum dots (QDs). These QDs were grown on sapphire substrates using the Stranski-Krastanov (SK) growth mode by means of low-pressure metal organic vapor phase epitaxy. The influence of th ...

2006

Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

GaN/AlGaN and InGaN/GaN quantum wells (QWs) are investigated as the active region for room-temperature strong exciton-photon coupling in high-quality AlInN/(Al)GaN microcavities (MCs). Angular resolved photoluminescence (PL) measurements performed on an Al ...

2006

Impact of disorder on high quality factor III-V nitride microcavities

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov, Gabriel Christmann

The authors report on the micron scale characterization of a monolithic GaN microcavity (MC) with lattice matched AlInN/GaN distributed Bragg reflectors by means of a microtransmission setup. This technique allows extracting very high quality factors (Q up ...

2006

Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Gabriel Christmann

We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for su ...

2005

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