Jean-François Carlin

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The current-voltage characteristics of the Ni/InAlN/GaN Schottky diodes were measured at various temperatures in the range of 300-700 K. The experimental data were analyzed considering different current-transport mechanisms. From the analysis it follows th ...

We report on the first observation of both confined optical phonons and interface phonons in a single strained InAs quantum well grown on InP. Quasi resonant Raman measurements allow for the observation of interface modes. Informations about the mismatch induced strain in the InAs layer are obtained. The effect of the strain and the confinement on the longitudinal and transverse optical InAs modes are estimated.

The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/Al2O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexago ...

GaN/AlGaN and InGaN/GaN quantum wells (QWs) are investigated as the active region for room-temperature strong exciton-photon coupling in high-quality AlInN/(Al)GaN microcavities (MCs). Angular resolved photoluminescence (PL) measurements performed on an Al ...

We report on the growth of barrier, reservoir and quantum well electron transfer (BRAQWET) structures using chemical beam epitaxy. The photoluminescence spectra of the structures are affected by the bias voltage. The QW emission line is extinguished at positive bias and the barrier emission line is extinguished at negative bias. These effects might be used for the BRAQWETs characterization.

Atomic layer deposition (ALD) is supplied to grow ZrO2 high-k gate dielectrics and fabricate InAlN/GaN metal oxide semiconductor (MOS) high electron mobility transistors (HEMTs). Ex situ chemical surface cleaning and optimised in situ InAlN surface pre-tre ...

A Hall mobility as high as 153,800 cm2 V-1 s-1 at 77 K with N(d) - N(a) = 1.5 x 10(14) cm-3 has been obtained by adjusting the growth temperature and the phosphine cracking temperature. The 4 K photoluminescence spectra show finely resolved excitonic transitions for layers grown above 535-degrees-C with linewidths as narrow as 0.07 meV. The use of substrates misoriented 2-degrees and 3.5-degrees towards (111)A significantly improves the morphology at the cost of a slight increase in the impurity incorporati

Far-UVC light sources in the spectral range of200-230 nm effectively kill bacteria and deactivate viruses while being not harmful to health, enabling persistent disinfection of air and surfaces in the presence of humans. So far only excimer lamps have been ...

The authors report on the achievement of a vertically oriented three pair airgap/GaN distributed Bragg reflector realized by controlled oxidation and wet-chemical etching of AlInN sacrificial layers. Microreflectivity measurements exhibit high peak reflect ...

We report on ultrahigh-speed 80 nm AlInN/GaN high-electron-mobility transistors (HEMTs) grown on (111) high-resistivity silicon substrates. The devices feature a peak measured transconductance g(M) = 415 mS/mm, a maximum current of 1.43 A/mm with a ratio I ...

Optical bistability is observed in cw-operating InGaN-based laser diodes including a saturable absorber (SA) section. The dependence of the light-current hysteresis on the SA section length and reverse bias (VSA) has been studied. An analytical approach is ...

The authors present low voltage barrier p-InP/p-GaAs junctions obtained by localised fusion which facilitates a better evacuation of absorbed gases and native oxides from the fused interface. Using this approach InGaAs/lnGaAsP/InP edge emitting lasers fused to p-GaAs were realised for the first time, showing better parameters than as-grown diodes. The presented results prove that localised fusion is a suitable tool for achieving additional lateral current confinement, which may be important for a wide varie

It is shown that in GaN/AlN multiple quantum wells (MQWs), strain is a critical parameter for achieving short-wavelength intersubband transitions (ISBTs). This is investigated by comparing GaN/AlN MQWs grown by metal organic vapor phase epitaxy on either A ...

We have studied the effect of growth interruptions on 2 monolayer thick InAs/InP strained quantum wells (QWS) grown by chemical beam epitaxy. The main feature is the formation of up to 8 monolayer thick InAs islands during As, annealing of the QW. Their formation is characterized by a two- to three-dimensional transition of the reflection high energy electron diffraction (RHEED) pattern and by multiple-line photoluminescence spectra. This interpretation of the data is confirmed by transmission electron micr

The effect of anodic oxidation on the electronic characteristics of lattice-matched AlInN/GaN heterostructures was investigated using field-effect transistor (FET) structures with the gate areas in direct contact with the electrolytes. The gate surface of ...

When InP is grown by chemical beam epitaxy on substrates patterned with ridges oriented along [110] with (111)B sidewall planes, the migration of In species on the surface changes direction with growth temperature. The movement is from the ridge to the valley through the sidewall above 505 degrees C, and from the sidewall to the ridge below 495 degrees C. By using this specific growth behavior, we have obtained a triangular prism-shaped buried heterostructure with a narrow active region. We also present an

We report a novel three-contacts vertical-cavity surface-emitting laser (VCSEL) for use in polarization-sensitive optical applications. The device consists in two vertical optically active cavities, coupled by a common min-or. We demonstrate that one can independently choose both the power - through the Current in the first cavity - and the polarization state of the output beam - through the bias applied to the second cavity. The control of the polarization state is performed with a control of voltage requi

We have studied the effect of growth interruptions on 2-monolayers-thick InAs/InP strained quantum wells (QW) grown by chemical beam epitaxy. The main feature is the formation of up to 8-monolayers-thick InAs islands during As2 annealing of the QW. Their formation is characterized by a two to three dimensional transition of the reflection high-energy electron diffraction pattern and multiple-lines photoluminescence spectra. An increase of a short range roughness at the InP-InAs interface due to As2 annealin

Intersubband (lSB) optical absorption in different nitride-based heterostructures grown by metal-organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi-quantum wells (MQWs) is investigated. At high concentration (15%) ...

The authors report on the micron scale characterization of a monolithic GaN microcavity (MC) with lattice matched AlInN/GaN distributed Bragg reflectors by means of a microtransmission setup. This technique allows extracting very high quality factors (Q up ...

Jean-François Carlin

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Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

Raman study of a single InP/InAs/InP strained quantum well

Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities

Chemical Beam Epitaxy and Photoluminescence Characteristics of Ingaasp/Inp Braqwet Modulators

Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics

LUMINESCENCE AND TRANSPORT-PROPERTIES OF HIGH-QUALITY INP GROWN BY CBE BETWEEN 450-DEGREES-C AND 550-DEGREES-C

Monolayer-Thick GaN/AlN Quantum Well Anodes and Far-UVC Field Emission Device at 226 nm

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F-T=143 GHz

Optical bistability in InGaN-based multisection laser diodes

InGaAs/InGaAsP/InP Edge Emitting Laser Diodes on p-GaAs Substrates Obtained by Localised Wafer Fusion

Strain-induced interface instability in GaN/AlN multiple quantum wells

Effect of growth interruptions on ultra thin InAs/InP quantum grown by chemical beam epitaxy

Effect of anodic oxidation on the characteristics of lattice-matched AlInN/GaN heterostructures

Growth temperature dependence of the interfacet migration in chemical beam epitaxy of InP on non-planar substrates

Study of polarisation switch in a three-contacts vertical-cavity surface-emitting laser

Island formation in ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy

Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

Impact of disorder on high quality factor III-V nitride microcavities