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Jean-François Carlin

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Publications associées (189)

Effect of anodic oxidation on the characteristics of lattice-matched AlInN/GaN heterostructures

Jean-François Carlin, Nicolas Grandjean, Eric Feltin

The effect of anodic oxidation on the electronic characteristics of lattice-matched AlInN/GaN heterostructures was investigated using field-effect transistor (FET) structures with the gate areas in direct contact with the electrolytes. The gate surface of ...

2008

Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-xInxN films grown on sapphire

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

The lattice parameters and strain evolution in Al1-xInxN films with 0.07

2008

Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We present the technology and performance of InAlN/AlN/GaN MOS HEMTs with gate insulation and surface passivation using ZrO2 or HfO2. About 10-nm-thick high-k dielectrics were deposited by MOCVD before the ohmic contact processing. Plasma pretreatment allo ...

2008

Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Fluoride plasma treatment similar to that used in AlGaN/GaN HEMTs has been applied to InAlN/GaN HEMTs. Enhancement mode of operation is obtained with a pinch-off voltage shifted by 3 V. Owing to the fluoride treatment an increase of the forward gate thresh ...

2008

Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN templates for an indium content of similar to 17.5%, i.e., it can be grown either ...

2008

Barrier-layer scaling of InAlN/GaN HEMTs

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We discuss the characteristics of In0.17Al0.83N/GaN high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at V-G = +2.0 ...

Institute of Electrical and Electronics Engineers2008

Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime

Jean-François Carlin, Pierre Stadelmann, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Antonino Francesco Castiglia, Anas Mouti

An AlInN/AlGaN microcavity (MC) containing a GaN/Al0.2Ga0.8N multiple quantum well (MQW) structure is investigated through room temperature (RT) photoluminescence and reflectivity experiments. A vacuum Rabi splitting as large as 50 meV at RT is reported fo ...

2008

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guid ...

2008

Selective oxidation and selective etching of allnn layers for manufacturing group iii nitride semiconductor devices

Jean-François Carlin, Julien Dorsaz

A method for including an oxide region in a layered structure being grown epitaxially on a substrate, comprising the steps of epitaxially forming a Group III-nitride precursor layer, and selectively oxidizing the precursor layer, thereby forming the oxide ...

2007

Narrow UV emission from homogeneous GaN/AlGaN quantum wells

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov

The authors report on the achievement of narrow ultraviolet emission using GaN/AlGaN quantum wells grown by metal organic vapor phase epitaxy. The origin of the inhomogeneous broadening of the emission is explained by means of micro-photoluminescence and a ...

2007

Modification of InGaN quantum well luminescence by microstructured buffer layers

Jean-François Carlin, Jean-Daniel Ganière, Nicolas Grandjean

With the aim of increasing the efficiency of green and blue light-emitting diodes, we investigate the luminescence of InGaN/GaN quantum wells on structured GaN buffer layers. ...

AIP2007

Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

The authors investigate 2 mu m gate-length InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS HEMTs) with 12 nm thick Al2O3 gate insulation. Compared to the Schottky barrier (SB) HEMT with similar design, the MOS HEMT exhibits a ga ...

2007

MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

Jean-François Carlin, Nicolas Grandjean

We apply metal organic chemical vapour deposition (MOCVD) of HfO2 and of ZrO2 from beta-diketonate precursors to grow high-k gate dielectrics for InAlN/AlN/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs). High-k oxides of abo ...

2007

AlInN/GaN a suitable HEMT device for extremely high power high frequency applications

Jean-François Carlin, Nicolas Grandjean, Eric Feltin

AlInN/GaN unpassivated High Electron Mobility Transistor (HEMT) on Sapphire substrate has yielded a maximum drain current density close to 2 A/mm in steady state. Superior gate length downscaling than AlGaN/GaN devices has been observed owing to the possib ...

Ieee2007

Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs

Jean-François Carlin, Nicolas Grandjean, Marcus Gonschorek

Gate and drain-lag effects are studied in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs grown on sapphire. Electron trapping on the surface states between the gate and the drain forming the net negative charge up-to similar to 2 x 10(13) cm(-2) is found to be re ...

Wiley2007

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

AllnN/GaN high electron mobility transistors (HEMTs) on sapphire substrate have yielded a maximum drain current density of 1.26 A/mm with a current gain cutoff and maximum oscillation frequencies about 26 and 40 GHz, respectively, for a 0.25 mu m gate leng ...

2007

Efficient current injection scheme for nitride vertical cavity surface emitting lasers

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov, Antonino Francesco Castiglia

The authors report the realization of InGaN/GaN light emitting diodes (LEDs) with an electrical injection design suitable for vertical cavity surface emitting lasers. Controlled oxidation of an AlInN interlayer lattice matched to GaN allows confining the i ...

2007

Room-temperature polariton lasing in semiconductor microcavities

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, co ...

2007

Selective etching of AlInN/GaN heterostructures for MEMS technology

Jean-François Carlin, Marc Ilegems, Nicolas Grandjean

An etching technology for the patterning of suspended GaN structures on lattice matched AlInN sacrificial layers is studied. Selective dry RIE etching of GaN to AlInN is demonstrated, which allows effective pattern transfer without affecting lower layers. ...

2007

Growth mode induced carrier localization in InGaN/GaN quantum wells

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Raphaël Butté, Eric Feltin

The growth of InGaN quantum wells ( QWs) by metal-organic vapour phase epitaxy is investigated by atomic force microscopy ( AFM). It is shown that for low growth temperatures the surface morphology of the thin InGaN well layer ( 1.5 nm) exhibits a meanderi ...

2007

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