Publications related to Impact Impact of different capping layers on carrier injection efficiency between amorphous and crystalline silicon measured using photoluminescence

Related publications (42)

Self-Aligned Silica Nanoparticle Rear Reflectors for Single-Junction Si and Perovskite-Si Tandem Solar Cells

Christophe Ballif, Christian Michael Wolff, Kerem Artuk, Deniz Türkay

Infrared light management is crucial to maximize the optical performance of crystalline Si-based single junction and tandem solar cells. For this end, a low refractive index dielectric is typically inserted under the rear metal and an electrical contact is ...

2025

Synthesis and characterization of low-dimensional organic-inorganic perovskites for detection and photovoltaic applications

Colin Jeanguenat

Low-dimensional perovskite such as layered halide perovskite and perovskite nanocrystals have attracted attention in the past decade. These materials have impressive optoelectronic properties such as high photoluminescence and improved stability relative t ...

EPFL2025

Versatile self-assembled monolayers for perovskite-based optoelectronic devices

Mohammad Khaja Nazeeruddin, Paul Joseph Dyson, Yong Ding, Shun Tian, Li Tao

The emergence of metal halide perovskite materials has triggered a revolutionary change in optoelectronic devices. Due to their outstanding optoelectronic properties and defect tolerance, metal halide perovskites can be used for a wide range of application ...

2025

Residual stress chevron preloading amplifier for large-stroke stiffness reduction of silicon flexure mechanisms

Simon Nessim Henein, Florent Cosandier, Loïc Benoît Tissot-Daguette, Quentin Gubler

Residual stresses can be advantageously used to permanently preload flexure micro-mechanisms in order to modify their deflection and stiffness. This paper presents a new preloading chevron mechanism (PCM) used to amplify the preloading effect of thin film ...

IOP Publishing2025

p-NiO/LiNiO-GaN heterojunctions: a potential alternative to p-GaN for advanced devices

Elison de Nazareth Matioli, Mounir Driss Mensi, Alessandro Floriduz, Yuan Zong, Zheng Hao, Uiho Choi

In this work, we introduce a p-NiO/LiNiO stack grown via low-temperature deposition processes, offering an effective alternative for creating localized p-type regions in GaN devices. This stack combines a high hole concentration p-NiO film ([h] = 2 × 1019 ...

Institute of Electrical and Electronics Engineers2025

Advanced Dual-Channel Gate Driver with Short-circuit Protection for Series Connected Medium-Voltage SiC MOSFETs

Drazen Dujic, Rui Wang

The dual-channel gate driver (D-GD) is widely employed in the industry to support the extensive adoption of half-bridge power modules. With the growing popularity of silicon-carbide (SiC) devices in medium-voltage scenarios known for their superior switchi ...

Institute of Electrical and Electronics Engineers (IEEE)2025

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Ezgi Genç

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

EPFL2024

Synergetic substrate and additive engineering for over 30%-efficient perovskite-Si tandem solar cells

Christophe Ballif, Mathieu Gérard Boccard, Quentin Thomas Jeangros, Mounir Driss Mensi, Christian Michael Wolff, Kerem Artuk, Deniz Türkay, Daniel Anthony Jacobs, Xin Yu Chin

Perovskite-silicon (Si) tandem solar cells are the most prominent contenders to succeed single-junction Si cells that dominate the market today. Yet, to justify the added cost of inserting a perovskite cell on top of Si, these devices should first exhibit ...

2024

Quantifying Recombination and Charge Carrier Extraction in Halide Perovskites Via Hyperspectral Time-resolved Photoluminescence Imaging

Anurag Krishna

Identifying sources of nonradiative recombination and quantifying charge carrier extraction in halide perovskite solar cells are important in further developing this thin-film technology. Steady-state and time-resolved photoluminescence (TRPL), in combinat ...

AIP Publishing2024

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

Sofia Libraro

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

EPFL2024

Bodily implant microelectrode and bodily implant microelectrode fabrication method

Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni

The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...

2024

Spatial Conformation Engineering of Aromatic Ketones for Highly Efficient and Stable Perovskite Solar Cells

Minhuan Wang, Michael Graetzel, Shaik Mohammed Zakeeruddin, Likai Zheng, Xiaoqing Jiang

Carbonyl-containing materials employed in state-of-the-art hybrid lead halide perovskite solar cells (PSCs) exhibit a strong structure-dependent electron donor effect that predominates in defect passivation. However, the impact of the molecular spatial con ...

AMER CHEMICAL SOC2024

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Giovanni De Cesare, Sylvain Dunand, Luca Massimiliano Antognini, Jonathan Emanuel Thomet

Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEt ...

Iop Publishing Ltd2024

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Wei-Hsu Hu

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

EPFL2024

ZnO nanostructures - Future frontiers in photocatalysis, solar cells, sensing, supercapacitor, fingerprint technologies, toxicity, and clinical diagnostics

Mohammad Khaja Nazeeruddin

Zinc is the most abundant and broadly studied metal oxide semiconductor. Its photophysical properties include optical, electrical, magnetic, catalytic, sensing, energy storage, antibacterial, anti-oxidant, and drug delivery applications have been extensive ...

ELSEVIER SCIENCE SA2024

Colloidal Atomic Layer Deposition on Nanocrystals Using Ligand-Modified Precursors

Raffaella Buonsanti, Anna Loiudice, Petru Pasquale Albertini, Ona Segura Lecina, Philippe Benjamin Green, Jari Leemans, Mark Adrian Newton, Coline Marie Agathe Boulanger, Krishna Kumar

Atomic layer deposition (ALD) is a method to grow thin metal oxide layers on a variety of materials for applications spanning from electronics to catalysis. Extending ALD to colloidally stable nanocrystals promises to combine the benefits of thin metal oxi ...

Amer Chemical Soc2024

Durable Perovskite Solar Cells with 24.5% Average Efficiency: The Role of Rigid Conjugated Core in Molecular Semiconductors

Michael Graetzel, Shaik Mohammed Zakeeruddin, Peng Wang, Felix Thomas Eickemeyer

Efficient and robust n-i-p perovskite solar cells necessitate superior organic hole-transport materials with both mechanical and electronic prowess. Deciphering the structure-property relationship of these materials is crucial for practical perovskite sola ...

Wiley-V C H Verlag Gmbh2024

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Elison de Nazareth Matioli, Alessandro Floriduz, Uiho Choi

In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

Iop Publishing Ltd2024

Influence of ionization and cumulative effects on laser-induced crystallization in multilayer dielectrics

Yves Bellouard, Victor Carle Adrien Boureau, Ruben Ricca

Crystallization of amorphous layers has been demonstrated under various radically different laser-exposure conditions, including continuous wave (cw) and pulsed lasers. Here, we investigate the specific role of ionization in the crystallization of dielectr ...

2024

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Didem Dede

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024