Impact Impact of different capping layers on carrier injection efficiency between amorphous and crystalline silicon measured using photoluminescence

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Infrared light management is crucial to maximize the optical performance of crystalline Si-based single junction and tandem solar cells. For this end, a low refractive index dielectric is typically inserted under the rear metal and an electrical contact is ...

Low-dimensional perovskite such as layered halide perovskite and perovskite nanocrystals have attracted attention in the past decade. These materials have impressive optoelectronic properties such as high photoluminescence and improved stability relative t ...

The emergence of metal halide perovskite materials has triggered a revolutionary change in optoelectronic devices. Due to their outstanding optoelectronic properties and defect tolerance, metal halide perovskites can be used for a wide range of application ...

Residual stresses can be advantageously used to permanently preload flexure micro-mechanisms in order to modify their deflection and stiffness. This paper presents a new preloading chevron mechanism (PCM) used to amplify the preloading effect of thin film ...

In this work, we introduce a p-NiO/LiNiO stack grown via low-temperature deposition processes, offering an effective alternative for creating localized p-type regions in GaN devices. This stack combines a high hole concentration p-NiO film ([h] = 2 × 1019 ...

The dual-channel gate driver (D-GD) is widely employed in the industry to support the extensive adoption of half-bridge power modules. With the growing popularity of silicon-carbide (SiC) devices in medium-voltage scenarios known for their superior switchi ...

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

Perovskite-silicon (Si) tandem solar cells are the most prominent contenders to succeed single-junction Si cells that dominate the market today. Yet, to justify the added cost of inserting a perovskite cell on top of Si, these devices should first exhibit ...

Identifying sources of nonradiative recombination and quantifying charge carrier extraction in halide perovskite solar cells are important in further developing this thin-film technology. Steady-state and time-resolved photoluminescence (TRPL), in combinat ...

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...

Carbonyl-containing materials employed in state-of-the-art hybrid lead halide perovskite solar cells (PSCs) exhibit a strong structure-dependent electron donor effect that predominates in defect passivation. However, the impact of the molecular spatial con ...

Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEt ...

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

Zinc is the most abundant and broadly studied metal oxide semiconductor. Its photophysical properties include optical, electrical, magnetic, catalytic, sensing, energy storage, antibacterial, anti-oxidant, and drug delivery applications have been extensive ...

Atomic layer deposition (ALD) is a method to grow thin metal oxide layers on a variety of materials for applications spanning from electronics to catalysis. Extending ALD to colloidally stable nanocrystals promises to combine the benefits of thin metal oxi ...

Efficient and robust n-i-p perovskite solar cells necessitate superior organic hole-transport materials with both mechanical and electronic prowess. Deciphering the structure-property relationship of these materials is crucial for practical perovskite sola ...

In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

Crystallization of amorphous layers has been demonstrated under various radically different laser-exposure conditions, including continuous wave (cw) and pulsed lasers. Here, we investigate the specific role of ionization in the crystallization of dielectr ...

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

Impact Impact of different capping layers on carrier injection efficiency between amorphous and crystalline silicon measured using photoluminescence

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Self-Aligned Silica Nanoparticle Rear Reflectors for Single-Junction Si and Perovskite-Si Tandem Solar Cells

Synthesis and characterization of low-dimensional organic-inorganic perovskites for detection and photovoltaic applications

Versatile self-assembled monolayers for perovskite-based optoelectronic devices

Residual stress chevron preloading amplifier for large-stroke stiffness reduction of silicon flexure mechanisms

p-NiO/LiNiO-GaN heterojunctions: a potential alternative to p-GaN for advanced devices

Advanced Dual-Channel Gate Driver with Short-circuit Protection for Series Connected Medium-Voltage SiC MOSFETs

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Synergetic substrate and additive engineering for over 30%-efficient perovskite-Si tandem solar cells

Quantifying Recombination and Charge Carrier Extraction in Halide Perovskites Via Hyperspectral Time-resolved Photoluminescence Imaging

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

Bodily implant microelectrode and bodily implant microelectrode fabrication method

Spatial Conformation Engineering of Aromatic Ketones for Highly Efficient and Stable Perovskite Solar Cells

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

ZnO nanostructures - Future frontiers in photocatalysis, solar cells, sensing, supercapacitor, fingerprint technologies, toxicity, and clinical diagnostics

Colloidal Atomic Layer Deposition on Nanocrystals Using Ligand-Modified Precursors

Durable Perovskite Solar Cells with 24.5% Average Efficiency: The Role of Rigid Conjugated Core in Molecular Semiconductors

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Influence of ionization and cumulative effects on laser-induced crystallization in multilayer dielectrics

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy