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Mihai Adrian Ionescu

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Related publications (396)

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Negative capacitance semiconductor sensor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando

The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically ...

2020

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Livio Lattanzio

We report a novel device which exploits the internally combined quantum mechanical Band-To-Band and Barrier Tunneling mechanisms to achieve improved performances and overcome the intrinsic low current drive limitations of conventional Tunnel FETs and the 6 ...

IEEE2010

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Mihai Adrian Ionescu, Igor Stolichnov, Enrico Colla, Matteo Cavalieri

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

2018

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

Mihai Adrian Ionescu, Didier Bouvet, Antonios Bazigos, Elizabeth Buitrago Godinez, Sara Rigante

Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technolo ...

Amer Chemical Soc2015

An Experimental Study Of The Photoresponse Of 1T-1R Oscillators Based On Vanadium Dioxide: Towards Spiking Sensing Systems

Olivier Martin, Mihai Adrian Ionescu, Teodor Rosca, Marco Riccardi, Fatemeh Qaderi Rahaqi

In this work we investigate the effect of visible light radiation on compact 1T-1R relaxation spiking oscillator cells based on 2-terminal Vanadium dioxide (VO2) structures. We illuminate the devices using a tunable wavelength laser between 400 and 850 nm ...

IEEE2021

Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation

Mihai Adrian Ionescu, Luca Capua, Yann Christophe Sprunger, Felix Risch

We present a CMOS-compatible double gate and label-free C-reactive protein (CRP) sensor, based on silicon on insulator (SOI) silicon nanowires arrays. We exploit a reference subtracted detection method and a super-Nernstian internal amplification given by ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Energy and Latency Optimization in NEM Relay-Based Digital Circuits

Mihai Adrian Ionescu, Antonios Bazigos

Digital circuits based on nanoelectromechanical (NEM) relays hold out the potential of providing an energy efficiency unachievable by conventional CMOS technology. This paper presents a detailed analysis of the operating characteristics of fabricated curve ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Detection of ultra-low protein concentrations with the simplest possible field effect transistor

Mihai Adrian Ionescu, Elizabeth Buitrago Godinez

Silicon nanowire (Si NW) sensors have attracted great attention due to their ability to provide fast, low-cost, label-free, real-time detection of chemical and biological species. Usually configured as field effect transistors (FETs), they have already dem ...

IOP PUBLISHING LTD2019

Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO2 Spiking Neuron

Mihai Adrian Ionescu, Teodor Rosca

In this work, we investigate the intrinsic cycle-to-cycle variations in a spiking temperature-sensitive neuron, based on the resistive switching of a Vanadium dioxide (VO2) two-terminal device. We study how this phenomenon impacts the spike rate jitter, an ...

IEEE2023

Component design and testing for a miniaturised autonomous sensor based on a nanowire materials platform

Mihai Adrian Ionescu, Maher Kayal, François Krummenacher, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez, Naser Khosro Pour

We present the design considerations of an autonomous wireless sensor and discuss the fabrication and testing of the various components including the energy harvester, the active sensing devices and the power management and sensor interface circuits. A com ...

Springer2014

Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

Mihai Adrian Ionescu, José Luis Padilla de la Torre

Among the different types of bilayer tunneling field-effect transistors exploiting interband tunneling phenomena with tunneling directions aligned with gate-induced electric fields, the utilization of InAs/GaSb channels proves to be an appealing means to e ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories

Giovanni De Micheli, Mihai Adrian Ionescu, Yusuf Leblebici, David Atienza Alonso, Didier Bouvet, Kirsten Emilie Moselund, Mohamed Haykel Ben Jamaa

The fabrication of crossbar memories with sublithographic features is expected to be feasible within several emerging technologies; in all of them, the nanowire (NW) decoder is a critical part since it bridges the sublithographic wires to the outer circuit ...

2008

In-situ grown horizontal carbon nanotube membrane

Mihai Adrian Ionescu, Hoël Maxime Guérin

We present the successful fabrication of horizontally grown and dense carbon nanotube (CNT) membranes in situ. A TiN/Al2O3/TiN stack is first patterned to be employed as a support for the CNT growth. Iron is then evaporated with a 45 degrees tilt angle on ...

Elsevier2012

Trapping Individual Carbon Nanotubes

Mihai Adrian Ionescu

A technique to deterministically manipulate individual Carbon Nanotubes (CNT) has been the brick-wall for the boom of CNT based devices. Here we demonstrate dielectrophoresis as an efficient technique to trap individual Single Walled Carbon Nanotubes (SWCN ...

2008

NANOSIL network of excellence--silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Katherine Boucart

NANOSIL Network of Excellence [NANOSIL NoE web site ], funded by the European Commission in the 7th Framework Programme (ICT-FP7, no 216171), aims at European scale integration of the excellent European research laboratories and their c ...

2008

Prospects for logic-on-a-wire

Giovanni De Micheli, Mihai Adrian Ionescu, Yusuf Leblebici, David Atienza Alonso, Didier Bouvet, Kirsten Emilie Moselund, Mohamed Haykel Ben Jamaa

In this paper we present the top-down fabrication of gate-all-around (GAA) and body-tied @W-gate devices by a combination of etching and oxidation steps resulting in a local silicon-on-insulator structure. The GAA has advantages in terms of enhanced curren ...

2008

Extended-Gate FET cortisol sensor for stress disorders based on aptamers-decorated graphene electrode: Fabrication, Experiments and Unified Analog Predictive Modeling

Mihai Adrian Ionescu

In this work we report the fabrication, characterization and validation of a cortisol biosensor, together with a unified predictive calibrated model. We demonstrated the possibility of using a classical submicron semiconductor FET as the transducer for a c ...

IEEE2020

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Silicon nanostructuring for 3D bulk silicon versatile devices

Mihai Adrian Ionescu, Matthieu Bopp

A fabrication method for silicon beams and membranes defined in lateral and vertical dimensions, as well as superposed silicon membranes, all realized in bulk silicon using only one lithographic step is proposed. This proposal is based on observations made ...

2008

Fabrication and electrical characterization of high performance copper/polyimide inductors

Mihai Adrian Ionescu, Catherine Dehollain, Didier Bouvet, Cyrille Hibert

This paper presents fabrication and RF characterization results of spiral inductors fabricated using a developed damascene-like thick-copper / polyimide process module. This module has low thermal budget and is compatible with current IC interconnect archi ...

2005