Home

Person

Mihai Adrian Ionescu

About
Privacy
Disclaimer

Graph Chatbot

Related publications (403)

Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO2 Spiking Neuron

In this work, we investigate the intrinsic cycle-to-cycle variations in a spiking temperature-sensitive neuron, based on the resistive switching of a Vanadium dioxide (VO2) two-terminal device. We study how this phenomenon impacts the spike rate jitter, an ...

IEEE2023

Nanoscale local modification of PMMA refractive index by tip-enhanced femtosecond pulsed laser irradiation

Mihai Adrian Ionescu

Tip-enhanced optical effects have enabled a wide palette of nanoscale investigation techniques and recently they were successfully used to modify and manipulate matter with nanoscale spatial resolution. We contribute to this latter area by reporting a viab ...

ELSEVIER2023

Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

Mihai Adrian Ionescu, Anna Fontcuberta i Morral, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Carlotta Gastaldi, Valerio Piazza, Mirjana Dimitrievska

Scalable and sustainable photovoltaic technologies require low-cost and earth-abundant semiconducting materials. Zinc phosphide is purported to be an absorber material with optimal photovoltaic properties. Herein we report the electrical properties of Zn3P ...

2023

Model-Based ISO 14971 Risk Management of EEG-Based Medical Devices

Mihai Adrian Ionescu, David Atienza Alonso, Renato Zanetti

Risk management (RM) is a key component of the development of modern medical devices (MD) to achieve acceptable functional safety and pass the regulatory process. The emerging availability of various techniques, languages, and tools that use model-based sy ...

New York2023

Metamodel for Safety Risk Management of Medical Devices Based on ISO 14971

Mihai Adrian Ionescu, David Atienza Alonso

The integration of information technologies into medical systems has led to an increase in digitalization, which results in enormous possibilities, but also challenges in system development. The ever-growing complexity of modern medical devices (MD) requir ...

2023

Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures

Paul Muralt, Mihai Adrian Ionescu, Kanghyun Chu, Daesung Park

Complex oxide heterointerfaces contain a rich playground of novel physical properties and functionalities, which give rise to emerging technologies. Among designing and controlling the functional properties of complex oxide film heterostructures, verticall ...

Wiley-V C H Verlag Gmbh2023

Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications

Mihai Adrian Ionescu, Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Pirouz Sohi, Mohammad Samizadeh Nikooytabalvandani

The rapid progress in high capacity communication systems is reaching extremely high data rates of 100 Gb s−1, which demands electronic switches with cut-off frequencies well above 1 THz. The excellent electron transport properties of III-V heterojunctions ...

IEEE2022

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Giant switchable non thermally-activated conduction in 180 degrees domain walls in tetragonal Pb(Zr,Ti)O-3

Igor Stolichnov, Mihai Adrian Ionescu, Felix Risch

Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains challenging to control and pA-rang ...

Nature Portfolio2022

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

Mihai Adrian Ionescu, Shokoofeh Sheibani

Fluoxetine (FL) is one of the selective serotonin reuptake inhibitors, which is used as an anti-depressant, as well as anti-panic drug. In this work, a sensor for label-free recognition of trace amounts of FL is introduced, which is based on an extended ga ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs

Mihai Adrian Ionescu, Jürgen Brugger, Clara-Fausta Moldovan, Ali Saeidi, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Xia Liu

We report the first experimental demonstration and performance characterization of a fully integrated negative capacitance (NC) WSe2/SnSe2 p-type Tunnel FETs (TFETs), validating the use of NC as a technology booster to achieve a significantly improved sub- ...

IEEE2022

Spike-Based Sensing and Communication for Highly Energy-Efficient Sensor Edge Nodes

Mihai Adrian Ionescu, Teodor Rosca

Highly energy-efficient wireless sensor nodes are a prerequisite for a sustainable operation of the Internet of things. Therefore, classical approaches for system design based on digital signal processing are not a viable solution, but system design has to ...

IEEE2022

Multi-Gate FD-SOI Single Electron Transistor for hybrid SET-MOSFET quantum computing

Mihai Adrian Ionescu, Pasquale Scarlino, Fabian Oppliger

In this work we explore the fabrication and experimental characterization of multi-gate FD-SOI devices that can operate both as single electron transistors (SETs) and MOSFETs. FD-SOI SET operation is achieved with electrostatically induced tunneling barrie ...

IEEE2022

Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation

Mihai Adrian Ionescu, Yann Christophe Sprunger, Luca Capua, Ron Gill, Aristea Grammoustianou, Felix Risch

We present a CMOS-compatible double gate and label-free C-reactive protein (CRP) sensor, based on silicon on insulator (SOI) silicon nanowires arrays. We exploit a reference subtracted detection method and a super-Nernstian internal amplification given by ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Subthreshold VO2 vertical switches for large-bandwidth millimeter-wave and sub-terahertz detection

Mihai Adrian Ionescu, Fatemeh Qaderi Rahaqi, Daesung Park, Ali Gilani

n-linear impedance characteristics of VO2 offer solutions to highly sensitive radio-frequency (RF), millimeterwave (mm-wave), and terahertz (THz) detectors. We demonstrate high-speed broadband sensibility of miniaturized VO2 switches by utilizing the nonli ...

IEEE2022

Defect-induced magnetism in homoepitaxial SrTiO3

Mihai Adrian Ionescu, Daesung Park

Along with recent advancements in thin-film technologies, the engineering of complex transition metal oxide heterostructures offers the possibility of creating novel and tunable multifunctionalities. A representative complex oxide is the perovskite stronti ...

AIP Publishing2022

Extended-gate field-effect transistor with aptamer functionalisation layer for measuring hormone concentration in biofluids and corresponding fabrication method

Mihai Adrian Ionescu, Shokoofeh Sheibani

The present invention concerns a biosensor (1) for sensing stress hormone cortisol concentration in a biofluid (27). The biosensor (1) comprises: an electrical transistor transducer (3) comprising a transistor gate electrode (17); a sensing electrode eleme ...

2022

Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films

Mihai Adrian Ionescu, Elison de Nazareth Matioli, Andrei Müller

The need for new accurate temperature monitoring is becoming high, especially with the proliferation of IoT monitoring and biological applications. In this work, we report the design, fabrication and electrical characterization results of a new type of res ...

IEEE2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Elisabetta Corti, Siegfried Karg

In this work we present an in-memory computing platform based on coupled VO2 oscillators fabricated in a crossbar configuration on silicon. Compared to existing platforms, the crossbar configuration promises significant improvements in terms of area densit ...

2021

Page 2 of 21