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Mihai Adrian Ionescu

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Related publications (403)

Subthermionic negative capacitance ion sensitive field-effect transistor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando, Carlotta Gastaldi

One of the main advantages of Ion-Sensitive Field-Effect Transistor (ISFET) technology is the capability to exploit technological advancements initially developed for conventional FETs for logic applications, such as the employ of high-k dielectrics for th ...

2020

Negative capacitance semiconductor sensor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando

The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically ...

2020

Extended-Gate FET cortisol sensor for stress disorders based on aptamers-decorated graphene electrode: Fabrication, Experiments and Unified Analog Predictive Modeling

Mihai Adrian Ionescu

In this work we report the fabrication, characterization and validation of a cortisol biosensor, together with a unified predictive calibrated model. We demonstrated the possibility of using a classical submicron semiconductor FET as the transducer for a c ...

IEEE2020

Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Hiroshi Iwai

This correspondence highlights that the Gibbs free energy description of a ferroelectric capacitor in series with a paraelectric capacitor, depends on the initial charge on the plates of the ferroelectric capacitor. An incomplete Gibbs free energy descript ...

2020

Antibodies fragments as enablers of cardiac troponin (cTn) detection with extended gate metal-oxide-semiconductor field effect transistors (EGFET)

Mihai Adrian Ionescu, Luca Capua

OXFORD UNIV PRESS2020

Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Igor Stolichnov, Mihai Adrian Ionescu, Andreas Schueler, Teodor Rosca, Anna Krammer, Riyaz Mohammed Abdul Khadar, Matteo Cavalieri, Fatemeh Qaderi Rahaqi, Andrei Müller

This work investigates and reports on the radio-frequency (RF) behavior in the frequency range of 5 – 35 GHz of germanium-doped (Ge-doped VO2) vanadium dioxide thin films, deposited on silicon substrates via sputtering and pulsed laser deposition (PLD) wit ...

2020

Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches

Mihai Adrian Ionescu, Matteo Cavalieri, Andrei Müller

In this Letter, we report and investigate the temperature dependency of various radio frequency (RF) parameters for a fabricated reconfigurable bandstop filter with vanadium dioxide (VO2) switches measured up to 55 GHz. Here, the insulator-to-metal (ITM) a ...

AIP American Institute of Physics2020

Apparatus for non-invasive sensing of biomarkers in human sweat

Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Johan Frédéric Longo, Hoël Maxime Guérin, Erick Antonio Garcia Cordero, Francesco Bellando

Presented herein are devices for collecting and/or channeling a biofluid (e.g., sweat, tears, saliva) and detecting and/or quantifying one or more biomarkers in the biofluid. The biomarker(s) may include, for example, ions, salts thereof, hormones and/or s ...

2019

NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration

Lucia Baldi Unser, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

The NEREID project ("NanoElectronics Roadmap for Europe: Identification and Dissemination") is dedicated to mapping the future of European Nanoelectronics. NEREID's objective is to develop a medium and long term roadmap for the European nanoelectronics ind ...

PERGAMON-ELSEVIER SCIENCE LTD2019

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Christian Enz, Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

Nature Research2019

A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO2) Phase Change Switches

Mihai Adrian Ionescu, Andreas Schueler, Emanuele Andrea Casu, Junrui Zhang, Anna Krammer, Riyaz Mohammed Abdul Khadar, Andrei Müller

The article presents the design, fabrication and characterization of a novel complementary metal-oxidesemiconductor (CMOS) compatible reconfigurable Ka band bandstop structure using split ring resonators (SRR) while employing the Vanadium Dioxide (VO2) pha ...

IEEE2019

Millimeter-wave-triggering of insulator-to-metal transition in Vanadium dioxide

Anja Skrivervik, Mihai Adrian Ionescu, Andreas Schueler, Anna Krammer, Fatemeh Qaderi Rahaqi, Andrei Müller

We establish insulator-to-metal transition (IMT) in Vanadium dioxide (VO2) by millimeter-wave (mm-wave) actuation, using two coupled dipole antennas: a simple one as a continuous mm-wave-source and the other one with an embedded VO2 part as an absorber. We ...

IEEE2019

Resistive Coupled VO2 Oscillators for Image Recognition

Igor Stolichnov, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Elisabetta Corti, Siegfried Karg

Oscillator networks are known for their interesting collective behavior such as frequency locking, phase locking, and synchronization. Compared to other artificial neural network implementations, timing rather than amplitude information is used for computa ...

IEEE2019

VO2 oscillators coupling for Neuromorphic Computation

Igor Stolichnov, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Elisabetta Corti, Siegfried Karg

New computation schemes inspired by biological processes can outperform standard von-Neumann architectures in dealing with complex and unstructured tasks. As a new approach, systems of frequency-locked, coupled oscillators are investigated using the phase ...

IEEE2019

Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET

Mihai Adrian Ionescu, Nicolò Oliva, Matteo Cavalieri, Luca Capua

In this work we report the fabrication, co-integration and resulting performance of 2D/2D van der Waals (vdW) Vertical p-type Tunnel FETs and p-MOSFETs in a WSe2/SnSe2 material system. We demonstrate the best ever reported combined performance in terms of ...

IEEE2019

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

Mihai Adrian Ionescu, Kirsten Emilie Moselund

We present scalable III-V heterojunction tunnel FETs fabricated using a Si CMOS-compatible FinFET process flow and integrated on Si (100) substrates. The tunneling junction is fabricated through self-aligned selective p(+) GaAsSb raised source epitaxial re ...

IEEE2019

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Fabien Patrick Wildhaber, Maneesha Rupakula, Junrui Zhang, Francesco Bellando, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...

IEEE2019

Capillary flow device for bio-fluid collection with semiconductor sensors

Mihai Adrian Ionescu, Hoël Maxime Guérin, Erick Antonio Garcia Cordero, Francesco Bellando

An on-body wearable bio-fluid collection and sensing device including an interface or interface surface comprising at least one biocompatible material for contacting a bodily part; at least one inlet for receiving the bio-fluid, at least one outlet for eva ...

2019

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Hoël Maxime Guérin, Maneesha Rupakula, Erick Antonio Garcia Cordero, Junrui Zhang, Francesco Bellando, Guillaume Charles Henri Herment

Ion sensitive field effect transistors (ISFETs) form a very attractive solution for wearable sensors due to their capacity for ultra-miniaturization, low power operation, and very high sensitivity, supported by complementary metal oxide semiconductor (CMOS ...

2019

Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

Paul Muralt, Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi

In this paper, we experimentally explore the transient negative capacitance effect in ferroelectric high-k gate stacks using multi-ferroelectric domain Si-doped HfO2 with and without the metal plane, MFMIS (TiN/Si:HfO2/TiN/SiO2) and MFIS (TiN/Si:HfO2/SiO2) ...

IEEE2019

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