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Mihai Adrian Ionescu

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Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Teodor Rosca

Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by u ...

AMER CHEMICAL SOC2020

Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots

Mihai Adrian Ionescu, Michele Ghini, Fabio Bersano, Niccolò Martinolli, Eloi Régis L Collette

This paper introduces a novel integration method of localized metallic back-gates into fully-depleted silicon-on-insulator (FDSOI) multi-gate FETs, enabling robust front-to-back electrostatic coupling from room temperature to cryogenic conditions, without ...

2025

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Francesco Bellando, Fabien Patrick Wildhaber, Junrui Zhang, Maneesha Rupakula, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...

IEEE2019

Future of Computing: towards Energy Efficient Cognitive Chips

Mihai Adrian Ionescu

The exponential growth of Artificial Intelligence (AI) and the Internet of Things (IoT) demands a paradigm shift in hardware design to ensure energy-efficient, sustainable computing. This talk will explore emerging trends in low-power AI hardware for Edge ...

Institute of Electrical and Electronics Engineers Inc.2025

Vanadium-Doped Hafnium Oxide: A High-Endurance Ferroelectric Thin Film with Demonstrated Negative Capacitance

Emeric Emmanuel Hartmann, Mihai Adrian Ionescu, Igor Stolichnov, Niccolò Martinolli, Anna Varini, Ehsan Ansari

This study proposes and validates a novel CMOS-compatible ferroelectric thin-film insulator made of vanadium-doped hafnium oxide (V:HfO2) by using an optimized atomic layer deposition (ALD) process. Comparative electrical performance analysis of metal-ferr ...

AMER CHEMICAL SOC2025

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

Mihai Adrian Ionescu, Didier Bouvet, Livio Lattanzio, Giovanni Antonio Salvatore

Interest in Ferroelectric FETs originates from their potential as non-volatile memories and, more recently, as abrupt switches. In this work, we focus on the role of the Curie temperature of the gate stack on the performance of Fe-FETs. The proposed study ...

IEEE2010

Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

Mihai Adrian Ionescu, Didier Bouvet, Luca De Michielis, Mohammad Najmzadeh

In this work we present for the first time correlation of lateral uniaxial tensile strain and I–V characteristics of GAA Si NW n-MOSFET, all measured on the same device. Micro-Raman spectroscopy is employed for direct strain measurement on devices to explo ...

Elsevier2010

3D Nanostructured Silicon Relying on Hard Mask Engineering for High Temperature Annealing (HME-HTA) Processes for Electronic Devices

Mihai Adrian Ionescu, Matthieu Bopp

Annealing silicon at high temperatures in hydrogen ambiance has been reported to induce surface diffusion of silicon; in these conditions, adapted 2D arrays of trenches etched in Bulk Si are transformed into buried cavities creating suspended membranes. A ...

2008

RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate

Mihai Adrian Ionescu, Julien Perruisseau-Carrier, Montserrat Fernandez-Bolanos Badia

A high capacitive ratio RF MEMS switch, with low-actuation voltage is designed, fabricated and experimentally validated on high-resistivity silicon (HRS) substrate. Thanks to very good fabrication control of all steps and to the high dielectric constant of ...

Elsevier2008

Ferroelectric tunnel fet switch and memory

Mihai Adrian Ionescu

A Ferroelectric tunnel FET switch as ultra-steep (abrupt) switch with subthreshold swing better than the MOSFET limit of 60 mV/decade at room temperature combining two key principles: ferroelectric gate stack and band-to-band tunneling in gated p-i-n junct ...

2013

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives

Mihai Adrian Ionescu, Philippe Renaud, Nicolas Abelé

A 14-MHz in-plane nanoelectromechanical resonator based on a resonant-suspended-gate (RSG) MOSFET principle and integrated in a front-end process is demonstrated. The devices are in-plane flexural vibration mode beams (L = 10 mum, w = 165 nm, and h = 400 n ...

Institute of Electrical and Electronics Engineers2008

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Mihai Adrian Ionescu, Nava Setter, Alexander Tagantsev, Didier Bouvet, Igor Stolichnov, Sebastian Riester, Roman Gysel, Giovanni Antonio Salvatore

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

AIP American Institute of Physics2009

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

Mihai Adrian Ionescu, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi

In this work, we propose and investigate the high performance and low power design space of non-hysteretic negative capacitance MOSFETs for the 14nm node based on the calibrated simulations using an experimental gate stack with PZT ferroelectric to obtain ...

2016

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi

We report the universal boosting impact of a true negative capacitance (NC) effect on digital and analog performances of Tunnel FETs (TFETs), mirrored for the first time in near hysteresis-free experiments and exploiting the S-shaped polarization character ...

IEEE2018

High-k dielectric FinFETs towards Sensing Integrated Circuits

Mihai Adrian Ionescu, Didier Bouvet, Sara Rigante

This work presents a well-defined electronic device, namely a n-channel high-k dielectric FinFET (Fin Field Effect Transistor) as new label-free sensor for enhanced sensing integrated circuits. Metal gate FinFETs on bulk Si have been successfully electrica ...

IEEE2013

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Mihai Adrian Ionescu, Christian Enz, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi, Francesco Bellando

This letter reports for the first time a full experimental study of performance boosting of tunnel FETs (TFETs) and MOSFETs by negative capacitance (NC) effect. We discuss the importance of capacitance matching between a ferroelectric NC and a device capac ...

Institute of Electrical and Electronics Engineers2017

Modulated scattering technique in the terahertz domain enabled by current actuated vanadium dioxide switches

Juan Ramon Mosig, Mihai Adrian Ionescu, Anja Skrivervik, Michele Tamagnone, Wolfgang Amadeus Vitale, Santiago Capdevila Cascante

The modulated scattering technique is based on the use of reconfigurable electromagnetic scatterers, structures able to scatter and modulate an impinging electromagnetic field in function of a control signal. The modulated scattering technique is used in a ...

Nature Research2017

Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters

Luca Petit, Mihai Adrian Ionescu, Andreas Schueler, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Clara-Fausta Moldovan, Antonio Paone

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2) as a future replacement solution for microelectromechanical capacitive switches. We prese ...

Elsevier Science Sa2016

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

Mihai Adrian Ionescu, Kirsten Emilie Moselund

We present scalable III-V heterojunction tunnel FETs fabricated using a Si CMOS-compatible FinFET process flow and integrated on Si (100) substrates. The tunneling junction is fabricated through self-aligned selective p(+) GaAsSb raised source epitaxial re ...

IEEE2019

Ultra low power: Emerging devices and their benefits for integrated circuits

Mihai Adrian Ionescu, Luca De Michielis, Ji Cao, Giovanni Antonio Salvatore, Nilay Dagtekin, Alexandru Rusu, Sebastian Thimotee Bartsch

In this paper we analyze and discuss the characteristics and expected benefits of some emerging device categories for ultra low power integrated circuits. First, we focus on two categories of sub-thermal subthreshold swing switches Tunnel FETs and Negative ...

IEEE2011